JP2005123360A5 - - Google Patents

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Publication number
JP2005123360A5
JP2005123360A5 JP2003355882A JP2003355882A JP2005123360A5 JP 2005123360 A5 JP2005123360 A5 JP 2005123360A5 JP 2003355882 A JP2003355882 A JP 2003355882A JP 2003355882 A JP2003355882 A JP 2003355882A JP 2005123360 A5 JP2005123360 A5 JP 2005123360A5
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JP
Japan
Prior art keywords
insulating film
interlayer insulating
region
gate
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003355882A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005123360A (ja
JP4413573B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003355882A priority Critical patent/JP4413573B2/ja
Priority claimed from JP2003355882A external-priority patent/JP4413573B2/ja
Priority to US10/963,822 priority patent/US7157321B2/en
Publication of JP2005123360A publication Critical patent/JP2005123360A/ja
Publication of JP2005123360A5 publication Critical patent/JP2005123360A5/ja
Priority to US11/584,524 priority patent/US7528410B2/en
Application granted granted Critical
Publication of JP4413573B2 publication Critical patent/JP4413573B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003355882A 2003-10-16 2003-10-16 半導体装置及びその作製方法 Expired - Fee Related JP4413573B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003355882A JP4413573B2 (ja) 2003-10-16 2003-10-16 半導体装置及びその作製方法
US10/963,822 US7157321B2 (en) 2003-10-16 2004-10-14 Semiconductor device and method for manufacturing the same
US11/584,524 US7528410B2 (en) 2003-10-16 2006-10-23 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003355882A JP4413573B2 (ja) 2003-10-16 2003-10-16 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2005123360A JP2005123360A (ja) 2005-05-12
JP2005123360A5 true JP2005123360A5 (enExample) 2006-06-08
JP4413573B2 JP4413573B2 (ja) 2010-02-10

Family

ID=34509777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003355882A Expired - Fee Related JP4413573B2 (ja) 2003-10-16 2003-10-16 半導体装置及びその作製方法

Country Status (2)

Country Link
US (2) US7157321B2 (enExample)
JP (1) JP4413573B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7736964B2 (en) * 2004-11-22 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method for manufacturing the same
KR101293567B1 (ko) * 2006-02-21 2013-08-06 삼성디스플레이 주식회사 표시장치의 제조방법
JP5173160B2 (ja) * 2006-07-14 2013-03-27 新光電気工業株式会社 多層配線基板及びその製造方法
CN100570836C (zh) * 2006-07-26 2009-12-16 财团法人工业技术研究院 多晶硅薄膜晶体管及其制造方法
JP5151782B2 (ja) * 2008-08-04 2013-02-27 コニカミノルタホールディングス株式会社 Ｔｆｔアレイ基板の製造方法
TWI529942B (zh) * 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
WO2011010546A1 (en) 2009-07-24 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102648525B (zh) * 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
CN102473737B (zh) * 2010-06-22 2014-07-23 松下电器产业株式会社 发光显示装置及其制造方法
US8461630B2 (en) * 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI654762B (zh) 2011-05-05 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
FR3059148B1 (fr) * 2016-11-23 2019-09-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives Realisation d'elements d'interconnexions auto-alignes pour circuit integre 3d
KR20210069835A (ko) * 2019-12-04 2021-06-14 엘지디스플레이 주식회사 디스플레이 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3173135B2 (ja) 1992-06-24 2001-06-04 セイコーエプソン株式会社 薄膜半導体装置及びその製造方法
JP2551724B2 (ja) 1993-03-04 1996-11-06 株式会社高度映像技術研究所 薄膜半導体装置およびその製造方法
US5814529A (en) 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
US6593592B1 (en) * 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
JP3239875B2 (ja) 1999-04-02 2001-12-17 日本電気株式会社 薄膜トランジスタおよびその製造方法
JP4939689B2 (ja) 2000-01-26 2012-05-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6639265B2 (en) 2000-01-26 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device

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