JP2005057167A5 - - Google Patents

Download PDF

Info

Publication number
JP2005057167A5
JP2005057167A5 JP2003288659A JP2003288659A JP2005057167A5 JP 2005057167 A5 JP2005057167 A5 JP 2005057167A5 JP 2003288659 A JP2003288659 A JP 2003288659A JP 2003288659 A JP2003288659 A JP 2003288659A JP 2005057167 A5 JP2005057167 A5 JP 2005057167A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
forming
gate electrode
insulating film
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003288659A
Other languages
English (en)
Japanese (ja)
Other versions
JP4402396B2 (ja
JP2005057167A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003288659A priority Critical patent/JP4402396B2/ja
Priority claimed from JP2003288659A external-priority patent/JP4402396B2/ja
Publication of JP2005057167A publication Critical patent/JP2005057167A/ja
Publication of JP2005057167A5 publication Critical patent/JP2005057167A5/ja
Application granted granted Critical
Publication of JP4402396B2 publication Critical patent/JP4402396B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003288659A 2003-08-07 2003-08-07 半導体装置の作製方法 Expired - Fee Related JP4402396B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003288659A JP4402396B2 (ja) 2003-08-07 2003-08-07 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003288659A JP4402396B2 (ja) 2003-08-07 2003-08-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005057167A JP2005057167A (ja) 2005-03-03
JP2005057167A5 true JP2005057167A5 (enExample) 2006-08-17
JP4402396B2 JP4402396B2 (ja) 2010-01-20

Family

ID=34367248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003288659A Expired - Fee Related JP4402396B2 (ja) 2003-08-07 2003-08-07 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4402396B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101133767B1 (ko) * 2005-03-09 2012-04-09 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
CN102509736B (zh) 2008-10-24 2015-08-19 株式会社半导体能源研究所 半导体器件和用于制造该半导体器件的方法
KR102181301B1 (ko) 2009-07-18 2020-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
CN113013218B (zh) * 2021-03-09 2024-05-24 武汉天马微电子有限公司 阵列基板、显示面板及显示装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100384672B1 (ko) * 1998-01-30 2003-05-22 가부시키가이샤 히타치세이사쿠쇼 액정 표시 장치
JP4583529B2 (ja) * 1998-11-09 2010-11-17 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3901893B2 (ja) * 1998-11-25 2007-04-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4939689B2 (ja) * 2000-01-26 2012-05-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4583654B2 (ja) * 2000-05-13 2010-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4064075B2 (ja) * 2000-06-07 2008-03-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5046452B2 (ja) * 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4926329B2 (ja) * 2001-03-27 2012-05-09 株式会社半導体エネルギー研究所 半導体装置およびその作製方法、電気器具
JP3813555B2 (ja) * 2001-08-29 2006-08-23 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP4785300B2 (ja) * 2001-09-07 2011-10-05 株式会社半導体エネルギー研究所 電気泳動型表示装置、表示装置、及び電子機器

Similar Documents

Publication Publication Date Title
JP2004214379A5 (enExample)
JP2003309193A5 (enExample)
JP2009157354A5 (enExample)
JP2009124124A5 (enExample)
JP2008305843A5 (enExample)
JP2003332581A5 (enExample)
CN104992925B (zh) 导电过孔结构、阵列基板和显示装置的制作方法
JP2001298176A5 (enExample)
TW200632428A (en) Active matrix substrate and its manufacturing method
JP2003243531A5 (enExample)
JPH10125928A5 (enExample)
JP2006510225A5 (enExample)
JP2004047608A5 (enExample)
JP2004177892A5 (enExample)
JP2004111479A5 (enExample)
JP2005123360A5 (enExample)
JP2005123565A (ja) ゲート−ボディーコンタクト薄膜トランジスター
JP2008211195A5 (enExample)
JPH11233652A (ja) 半導体装置およびその製造方法
JP2005057167A5 (enExample)
WO2014172970A1 (zh) 阵列基板及其制造方法和显示装置
JP2003037271A5 (enExample)
KR100553682B1 (ko) 게이트 전극을 갖는 반도체 소자 및 그 형성방법
KR20210086343A (ko) 기판 홀을 포함하는 디스플레이 장치
KR20160017839A (ko) 박막 트랜지스터, 이를 구비하는 디스플레이 장치, 박막 트랜지스터의 제조방법 및 디스플레이 장치의 제조방법