JP2024008946A5 - - Google Patents
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- JP2024008946A5 JP2024008946A5 JP2023182296A JP2023182296A JP2024008946A5 JP 2024008946 A5 JP2024008946 A5 JP 2024008946A5 JP 2023182296 A JP2023182296 A JP 2023182296A JP 2023182296 A JP2023182296 A JP 2023182296A JP 2024008946 A5 JP2024008946 A5 JP 2024008946A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- carbon atoms
- polishing composition
- composition according
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005498 polishing Methods 0.000 claims 16
- 125000004432 carbon atom Chemical group C* 0.000 claims 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000008119 colloidal silica Substances 0.000 claims 6
- 125000000217 alkyl group Chemical group 0.000 claims 5
- 125000003342 alkenyl group Chemical group 0.000 claims 4
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims 4
- 125000003118 aryl group Chemical group 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 150000001450 anions Chemical class 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 150000007524 organic acids Chemical class 0.000 claims 2
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- MQAYPFVXSPHGJM-UHFFFAOYSA-M trimethyl(phenyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)C1=CC=CC=C1 MQAYPFVXSPHGJM-UHFFFAOYSA-M 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023182296A JP7591634B2 (ja) | 2019-09-13 | 2023-10-24 | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019167314A JP7414437B2 (ja) | 2019-09-13 | 2019-09-13 | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
| JP2023182296A JP7591634B2 (ja) | 2019-09-13 | 2023-10-24 | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019167314A Division JP7414437B2 (ja) | 2019-09-13 | 2019-09-13 | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024008946A JP2024008946A (ja) | 2024-01-19 |
| JP2024008946A5 true JP2024008946A5 (https=) | 2024-06-17 |
| JP7591634B2 JP7591634B2 (ja) | 2024-11-28 |
Family
ID=74863747
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019167314A Active JP7414437B2 (ja) | 2019-09-13 | 2019-09-13 | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
| JP2023182296A Active JP7591634B2 (ja) | 2019-09-13 | 2023-10-24 | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019167314A Active JP7414437B2 (ja) | 2019-09-13 | 2019-09-13 | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20210079264A1 (https=) |
| JP (2) | JP7414437B2 (https=) |
| KR (1) | KR102932731B1 (https=) |
| CN (1) | CN112500798A (https=) |
| TW (1) | TWI875807B (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12291655B2 (en) * | 2021-04-27 | 2025-05-06 | DuPont Electronic Materials Holding, Inc. | Polishing composition and method of polishing a substrate having enhanced defect reduction |
| JP7743212B2 (ja) * | 2021-06-24 | 2025-09-24 | 花王株式会社 | シリコン基板用研磨液組成物 |
| JP2023003634A (ja) * | 2021-06-24 | 2023-01-17 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
| KR20240049278A (ko) * | 2021-08-20 | 2024-04-16 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물, 연마용 조성물의 제조 방법, 연마 방법, 반도체 기판의 제조 방법 |
| JP7727461B2 (ja) * | 2021-09-17 | 2025-08-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法、および半導体基板の製造方法 |
| JP7716950B2 (ja) * | 2021-09-30 | 2025-08-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法および半導体基板の製造方法 |
| KR102728251B1 (ko) * | 2021-12-31 | 2024-11-11 | 주식회사 케이씨텍 | 컨택 공정용 금속막 슬러리 조성물 |
| JP7787044B2 (ja) * | 2022-03-08 | 2025-12-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法、および半導体基板の製造方法 |
| KR20240164944A (ko) * | 2022-03-24 | 2024-11-21 | 씨엠씨 머티리얼즈 엘엘씨 | 유리 기판용 이중 첨가제 연마 조성물 |
| JP7760429B2 (ja) * | 2022-03-29 | 2025-10-27 | 株式会社フジミインコーポレーテッド | 表面処理組成物、表面処理方法、および半導体基板の製造方法 |
| JP2024048924A (ja) * | 2022-09-28 | 2024-04-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法、半導体基板の製造方法 |
| CN119875517B (zh) * | 2025-01-15 | 2025-09-19 | 江苏超芯星半导体有限公司 | 一种金刚石用抛光液及其制备方法和应用 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1813656A3 (en) * | 2006-01-30 | 2009-09-02 | FUJIFILM Corporation | Metal-polishing liquid and chemical mechanical polishing method using the same |
| JP5022006B2 (ja) * | 2006-11-24 | 2012-09-12 | 石原産業株式会社 | 金属分散液の製造方法及び該金属分散液を用いて形成した電極、配線パターン、塗膜、その塗膜を形成した装飾物品 |
| US20100001229A1 (en) * | 2007-02-27 | 2010-01-07 | Hitachi Chemical Co., Ltd. | Cmp slurry for silicon film |
| JP2009278061A (ja) | 2008-04-16 | 2009-11-26 | Hitachi Chem Co Ltd | Ｃｍｐ用研磨液及び研磨方法 |
| JP2013120885A (ja) | 2011-12-08 | 2013-06-17 | Hitachi Chemical Co Ltd | Ｃｍｐ用研磨液及びこの研磨液を用いた研磨方法 |
| JP2013138053A (ja) | 2011-12-28 | 2013-07-11 | Fujimi Inc | 研磨用組成物 |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| JP6054149B2 (ja) * | 2012-11-15 | 2016-12-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| DE112013005718B4 (de) * | 2012-11-30 | 2016-05-25 | Nitta Haas Incorporated | Polierzusammensetzung |
| US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US10106704B2 (en) * | 2014-03-20 | 2018-10-23 | Fujimi Incorporated | Polishing composition, polishing method, and method for producing substrate |
| WO2016031485A1 (ja) | 2014-08-29 | 2016-03-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨用組成物の製造方法 |
| US20170342304A1 (en) * | 2015-01-19 | 2017-11-30 | Fujimi Incorporated | Polishing composition |
| US9771496B2 (en) * | 2015-10-28 | 2017-09-26 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant and cyclodextrin |
| US20190211228A1 (en) | 2018-01-09 | 2019-07-11 | Cabot Microelectronics Corporation | Tungsten bulk polishing method with improved topography |
| JP7002635B2 (ja) | 2018-03-23 | 2022-01-20 | 富士フイルム株式会社 | 研磨液および化学的機械的研磨方法 |
| KR102723152B1 (ko) | 2018-03-23 | 2024-10-29 | 후지필름 가부시키가이샤 | 연마액 및 화학적 기계적 연마 방법 |
-
2019
- 2019-09-13 JP JP2019167314A patent/JP7414437B2/ja active Active
-
2020
- 2020-08-28 KR KR1020200109046A patent/KR102932731B1/ko active Active
- 2020-09-01 US US17/008,872 patent/US20210079264A1/en not_active Abandoned
- 2020-09-10 TW TW109131096A patent/TWI875807B/zh active
- 2020-09-11 CN CN202010953542.6A patent/CN112500798A/zh active Pending
-
2023
- 2023-10-24 JP JP2023182296A patent/JP7591634B2/ja active Active
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