JP7414437B2 - 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 - Google Patents

研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 Download PDF

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Publication number
JP7414437B2
JP7414437B2 JP2019167314A JP2019167314A JP7414437B2 JP 7414437 B2 JP7414437 B2 JP 7414437B2 JP 2019167314 A JP2019167314 A JP 2019167314A JP 2019167314 A JP2019167314 A JP 2019167314A JP 7414437 B2 JP7414437 B2 JP 7414437B2
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Prior art keywords
group
polishing
acid
polishing composition
carbon atoms
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JP2019167314A
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Japanese (ja)
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JP2021042343A (ja
Inventor
僚太 前
正悟 大西
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Fujimi Inc
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Fujimi Inc
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Priority to JP2019167314A priority Critical patent/JP7414437B2/ja
Priority to KR1020200109046A priority patent/KR102932731B1/ko
Priority to US17/008,872 priority patent/US20210079264A1/en
Priority to TW109131096A priority patent/TWI875807B/zh
Priority to CN202010953542.6A priority patent/CN112500798A/zh
Publication of JP2021042343A publication Critical patent/JP2021042343A/ja
Priority to JP2023182296A priority patent/JP7591634B2/ja
Application granted granted Critical
Publication of JP7414437B2 publication Critical patent/JP7414437B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2019167314A 2019-09-13 2019-09-13 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 Active JP7414437B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2019167314A JP7414437B2 (ja) 2019-09-13 2019-09-13 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
KR1020200109046A KR102932731B1 (ko) 2019-09-13 2020-08-28 연마용 조성물, 연마용 조성물의 제조 방법, 연마 방법 및 반도체 기판의 제조 방법
US17/008,872 US20210079264A1 (en) 2019-09-13 2020-09-01 Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate
TW109131096A TWI875807B (zh) 2019-09-13 2020-09-10 研磨用組合物、研磨用組合物的製造方法、研磨方法及半導體基板的製造方法
CN202010953542.6A CN112500798A (zh) 2019-09-13 2020-09-11 研磨用组合物、研磨用组合物的制造方法、研磨方法及半导体基板的制造方法
JP2023182296A JP7591634B2 (ja) 2019-09-13 2023-10-24 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019167314A JP7414437B2 (ja) 2019-09-13 2019-09-13 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法

Related Child Applications (1)

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JP2023182296A Division JP7591634B2 (ja) 2019-09-13 2023-10-24 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法

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JP2021042343A JP2021042343A (ja) 2021-03-18
JP7414437B2 true JP7414437B2 (ja) 2024-01-16

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JP2019167314A Active JP7414437B2 (ja) 2019-09-13 2019-09-13 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
JP2023182296A Active JP7591634B2 (ja) 2019-09-13 2023-10-24 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法

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Country Link
US (1) US20210079264A1 (https=)
JP (2) JP7414437B2 (https=)
KR (1) KR102932731B1 (https=)
CN (1) CN112500798A (https=)
TW (1) TWI875807B (https=)

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US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction
JP7743212B2 (ja) * 2021-06-24 2025-09-24 花王株式会社 シリコン基板用研磨液組成物
JP2023003634A (ja) * 2021-06-24 2023-01-17 花王株式会社 シリコンウェーハ用リンス剤組成物
KR20240049278A (ko) * 2021-08-20 2024-04-16 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 연마용 조성물의 제조 방법, 연마 방법, 반도체 기판의 제조 방법
JP7727461B2 (ja) * 2021-09-17 2025-08-21 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
JP7716950B2 (ja) * 2021-09-30 2025-08-01 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法および半導体基板の製造方法
KR102728251B1 (ko) * 2021-12-31 2024-11-11 주식회사 케이씨텍 컨택 공정용 금속막 슬러리 조성물
JP7787044B2 (ja) * 2022-03-08 2025-12-16 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
KR20240164944A (ko) * 2022-03-24 2024-11-21 씨엠씨 머티리얼즈 엘엘씨 유리 기판용 이중 첨가제 연마 조성물
JP7760429B2 (ja) * 2022-03-29 2025-10-27 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理方法、および半導体基板の製造方法
JP2024048924A (ja) * 2022-09-28 2024-04-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法、半導体基板の製造方法
CN119875517B (zh) * 2025-01-15 2025-09-19 江苏超芯星半导体有限公司 一种金刚石用抛光液及其制备方法和应用

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JP2009278061A (ja) 2008-04-16 2009-11-26 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
JP2013120885A (ja) 2011-12-08 2013-06-17 Hitachi Chemical Co Ltd Ｃｍｐ用研磨液及びこの研磨液を用いた研磨方法
JP2013138053A (ja) 2011-12-28 2013-07-11 Fujimi Inc 研磨用組成物
WO2016031485A1 (ja) 2014-08-29 2016-03-03 株式会社フジミインコーポレーテッド 研磨用組成物および研磨用組成物の製造方法
US20190211228A1 (en) 2018-01-09 2019-07-11 Cabot Microelectronics Corporation Tungsten bulk polishing method with improved topography
JP2019116627A (ja) 2014-03-20 2019-07-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法および基板の製造方法

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EP1813656A3 (en) * 2006-01-30 2009-09-02 FUJIFILM Corporation Metal-polishing liquid and chemical mechanical polishing method using the same
JP5022006B2 (ja) * 2006-11-24 2012-09-12 石原産業株式会社 金属分散液の製造方法及び該金属分散液を用いて形成した電極、配線パターン、塗膜、その塗膜を形成した装飾物品
US20100001229A1 (en) * 2007-02-27 2010-01-07 Hitachi Chemical Co., Ltd. Cmp slurry for silicon film
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
JP6054149B2 (ja) * 2012-11-15 2016-12-27 株式会社フジミインコーポレーテッド 研磨用組成物
DE112013005718B4 (de) * 2012-11-30 2016-05-25 Nitta Haas Incorporated Polierzusammensetzung
US9303189B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US20170342304A1 (en) * 2015-01-19 2017-11-30 Fujimi Incorporated Polishing composition
US9771496B2 (en) * 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
JP7002635B2 (ja) 2018-03-23 2022-01-20 富士フイルム株式会社 研磨液および化学的機械的研磨方法
KR102723152B1 (ko) 2018-03-23 2024-10-29 후지필름 가부시키가이샤 연마액 및 화학적 기계적 연마 방법

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JP2009278061A (ja) 2008-04-16 2009-11-26 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
JP2013120885A (ja) 2011-12-08 2013-06-17 Hitachi Chemical Co Ltd Ｃｍｐ用研磨液及びこの研磨液を用いた研磨方法
JP2013138053A (ja) 2011-12-28 2013-07-11 Fujimi Inc 研磨用組成物
JP2019116627A (ja) 2014-03-20 2019-07-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法および基板の製造方法
WO2016031485A1 (ja) 2014-08-29 2016-03-03 株式会社フジミインコーポレーテッド 研磨用組成物および研磨用組成物の製造方法
US20190211228A1 (en) 2018-01-09 2019-07-11 Cabot Microelectronics Corporation Tungsten bulk polishing method with improved topography

Also Published As

Publication number Publication date
CN112500798A (zh) 2021-03-16
JP2021042343A (ja) 2021-03-18
TWI875807B (zh) 2025-03-11
KR20210031822A (ko) 2021-03-23
KR102932731B1 (ko) 2026-03-04
JP2024008946A (ja) 2024-01-19
JP7591634B2 (ja) 2024-11-28
US20210079264A1 (en) 2021-03-18
TW202116966A (zh) 2021-05-01

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