CN112500798A - 研磨用组合物、研磨用组合物的制造方法、研磨方法及半导体基板的制造方法 - Google Patents

研磨用组合物、研磨用组合物的制造方法、研磨方法及半导体基板的制造方法 Download PDF

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Publication number
CN112500798A
CN112500798A CN202010953542.6A CN202010953542A CN112500798A CN 112500798 A CN112500798 A CN 112500798A CN 202010953542 A CN202010953542 A CN 202010953542A CN 112500798 A CN112500798 A CN 112500798A
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CN
China
Prior art keywords
group
polishing composition
polishing
acid
colloidal silica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010953542.6A
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English (en)
Chinese (zh)
Inventor
前僚太
大西正悟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
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Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of CN112500798A publication Critical patent/CN112500798A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN202010953542.6A 2019-09-13 2020-09-11 研磨用组合物、研磨用组合物的制造方法、研磨方法及半导体基板的制造方法 Pending CN112500798A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-167314 2019-09-13
JP2019167314A JP7414437B2 (ja) 2019-09-13 2019-09-13 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法

Publications (1)

Publication Number Publication Date
CN112500798A true CN112500798A (zh) 2021-03-16

Family

ID=74863747

Family Applications (1)

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CN202010953542.6A Pending CN112500798A (zh) 2019-09-13 2020-09-11 研磨用组合物、研磨用组合物的制造方法、研磨方法及半导体基板的制造方法

Country Status (5)

Country Link
US (1) US20210079264A1 (https=)
JP (2) JP7414437B2 (https=)
KR (1) KR102932731B1 (https=)
CN (1) CN112500798A (https=)
TW (1) TWI875807B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115247028A (zh) * 2021-04-27 2022-10-28 罗门哈斯电子材料Cmp控股股份有限公司 具有增强的缺陷减少的抛光组合物和抛光衬底的方法
CN119875517A (zh) * 2025-01-15 2025-04-25 江苏超芯星半导体有限公司 一种金刚石用抛光液及其制备方法和应用

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7743212B2 (ja) * 2021-06-24 2025-09-24 花王株式会社 シリコン基板用研磨液組成物
JP2023003634A (ja) * 2021-06-24 2023-01-17 花王株式会社 シリコンウェーハ用リンス剤組成物
KR20240049278A (ko) * 2021-08-20 2024-04-16 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 연마용 조성물의 제조 방법, 연마 방법, 반도체 기판의 제조 방법
JP7727461B2 (ja) * 2021-09-17 2025-08-21 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
JP7716950B2 (ja) * 2021-09-30 2025-08-01 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法および半導体基板の製造方法
KR102728251B1 (ko) * 2021-12-31 2024-11-11 주식회사 케이씨텍 컨택 공정용 금속막 슬러리 조성물
JP7787044B2 (ja) * 2022-03-08 2025-12-16 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
KR20240164944A (ko) * 2022-03-24 2024-11-21 씨엠씨 머티리얼즈 엘엘씨 유리 기판용 이중 첨가제 연마 조성물
JP7760429B2 (ja) * 2022-03-29 2025-10-27 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理方法、および半導体基板の製造方法
JP2024048924A (ja) * 2022-09-28 2024-04-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法、半導体基板の製造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200734436A (en) * 2006-01-30 2007-09-16 Fujifilm Corp Metal-polishing liquid and chemical mechanical polishing method using the same
JP2008127679A (ja) * 2006-11-24 2008-06-05 Ishihara Sangyo Kaisha Ltd 金属分散液及びその製造方法並びにそれを用いて形成した電極、配線パターン、塗膜、その塗膜を形成した装飾物品
US20100001229A1 (en) * 2007-02-27 2010-01-07 Hitachi Chemical Co., Ltd. Cmp slurry for silicon film
CN104428386A (zh) * 2012-07-17 2015-03-18 嘉柏微电子材料股份公司 锗-锑-碲化学机械抛光浆料
CN104781366A (zh) * 2012-11-15 2015-07-15 福吉米株式会社 研磨用组合物
CN104798181A (zh) * 2012-11-30 2015-07-22 霓达哈斯股份有限公司 研磨组合物
US20150259574A1 (en) * 2014-03-11 2015-09-17 Cabot Microelectronics Corporation Composition for tungsten cmp
CN106103640A (zh) * 2014-03-20 2016-11-09 福吉米株式会社 研磨用组合物、研磨方法及基板的制造方法
CN107207945A (zh) * 2015-01-19 2017-09-26 福吉米株式会社 研磨用组合物
CN108350318A (zh) * 2015-10-28 2018-07-31 嘉柏微电子材料股份公司 具有阳离子型表面活性剂及环糊精的加工钨的浆料

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009278061A (ja) 2008-04-16 2009-11-26 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
JP2013120885A (ja) 2011-12-08 2013-06-17 Hitachi Chemical Co Ltd Ｃｍｐ用研磨液及びこの研磨液を用いた研磨方法
JP2013138053A (ja) 2011-12-28 2013-07-11 Fujimi Inc 研磨用組成物
WO2016031485A1 (ja) 2014-08-29 2016-03-03 株式会社フジミインコーポレーテッド 研磨用組成物および研磨用組成物の製造方法
US20190211228A1 (en) 2018-01-09 2019-07-11 Cabot Microelectronics Corporation Tungsten bulk polishing method with improved topography
JP7002635B2 (ja) 2018-03-23 2022-01-20 富士フイルム株式会社 研磨液および化学的機械的研磨方法
KR102723152B1 (ko) 2018-03-23 2024-10-29 후지필름 가부시키가이샤 연마액 및 화학적 기계적 연마 방법

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200734436A (en) * 2006-01-30 2007-09-16 Fujifilm Corp Metal-polishing liquid and chemical mechanical polishing method using the same
JP2008127679A (ja) * 2006-11-24 2008-06-05 Ishihara Sangyo Kaisha Ltd 金属分散液及びその製造方法並びにそれを用いて形成した電極、配線パターン、塗膜、その塗膜を形成した装飾物品
US20100001229A1 (en) * 2007-02-27 2010-01-07 Hitachi Chemical Co., Ltd. Cmp slurry for silicon film
CN104428386A (zh) * 2012-07-17 2015-03-18 嘉柏微电子材料股份公司 锗-锑-碲化学机械抛光浆料
CN104781366A (zh) * 2012-11-15 2015-07-15 福吉米株式会社 研磨用组合物
CN104798181A (zh) * 2012-11-30 2015-07-22 霓达哈斯股份有限公司 研磨组合物
US20150259574A1 (en) * 2014-03-11 2015-09-17 Cabot Microelectronics Corporation Composition for tungsten cmp
CN106103640A (zh) * 2014-03-20 2016-11-09 福吉米株式会社 研磨用组合物、研磨方法及基板的制造方法
US20170081552A1 (en) * 2014-03-20 2017-03-23 Fujimi Incorporated Polishing composition, polishing method, and method for producing substrate
CN107207945A (zh) * 2015-01-19 2017-09-26 福吉米株式会社 研磨用组合物
CN108350318A (zh) * 2015-10-28 2018-07-31 嘉柏微电子材料股份公司 具有阳离子型表面活性剂及环糊精的加工钨的浆料

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115247028A (zh) * 2021-04-27 2022-10-28 罗门哈斯电子材料Cmp控股股份有限公司 具有增强的缺陷减少的抛光组合物和抛光衬底的方法
CN119875517A (zh) * 2025-01-15 2025-04-25 江苏超芯星半导体有限公司 一种金刚石用抛光液及其制备方法和应用

Also Published As

Publication number Publication date
JP2021042343A (ja) 2021-03-18
TWI875807B (zh) 2025-03-11
KR20210031822A (ko) 2021-03-23
KR102932731B1 (ko) 2026-03-04
JP2024008946A (ja) 2024-01-19
JP7591634B2 (ja) 2024-11-28
US20210079264A1 (en) 2021-03-18
JP7414437B2 (ja) 2024-01-16
TW202116966A (zh) 2021-05-01

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