TWI875807B - 研磨用組合物、研磨用組合物的製造方法、研磨方法及半導體基板的製造方法 - Google Patents
研磨用組合物、研磨用組合物的製造方法、研磨方法及半導體基板的製造方法 Download PDFInfo
- Publication number
- TWI875807B TWI875807B TW109131096A TW109131096A TWI875807B TW I875807 B TWI875807 B TW I875807B TW 109131096 A TW109131096 A TW 109131096A TW 109131096 A TW109131096 A TW 109131096A TW I875807 B TWI875807 B TW I875807B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- polishing composition
- acid
- group
- carbon atoms
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-167314 | 2019-09-13 | ||
| JP2019167314A JP7414437B2 (ja) | 2019-09-13 | 2019-09-13 | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202116966A TW202116966A (zh) | 2021-05-01 |
| TWI875807B true TWI875807B (zh) | 2025-03-11 |
Family
ID=74863747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109131096A TWI875807B (zh) | 2019-09-13 | 2020-09-10 | 研磨用組合物、研磨用組合物的製造方法、研磨方法及半導體基板的製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20210079264A1 (https=) |
| JP (2) | JP7414437B2 (https=) |
| KR (1) | KR102932731B1 (https=) |
| CN (1) | CN112500798A (https=) |
| TW (1) | TWI875807B (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12291655B2 (en) * | 2021-04-27 | 2025-05-06 | DuPont Electronic Materials Holding, Inc. | Polishing composition and method of polishing a substrate having enhanced defect reduction |
| JP7743212B2 (ja) * | 2021-06-24 | 2025-09-24 | 花王株式会社 | シリコン基板用研磨液組成物 |
| JP2023003634A (ja) * | 2021-06-24 | 2023-01-17 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
| KR20240049278A (ko) * | 2021-08-20 | 2024-04-16 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물, 연마용 조성물의 제조 방법, 연마 방법, 반도체 기판의 제조 방법 |
| JP7727461B2 (ja) * | 2021-09-17 | 2025-08-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法、および半導体基板の製造方法 |
| JP7716950B2 (ja) * | 2021-09-30 | 2025-08-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法および半導体基板の製造方法 |
| KR102728251B1 (ko) * | 2021-12-31 | 2024-11-11 | 주식회사 케이씨텍 | 컨택 공정용 금속막 슬러리 조성물 |
| JP7787044B2 (ja) * | 2022-03-08 | 2025-12-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法、および半導体基板の製造方法 |
| KR20240164944A (ko) * | 2022-03-24 | 2024-11-21 | 씨엠씨 머티리얼즈 엘엘씨 | 유리 기판용 이중 첨가제 연마 조성물 |
| JP7760429B2 (ja) * | 2022-03-29 | 2025-10-27 | 株式会社フジミインコーポレーテッド | 表面処理組成物、表面処理方法、および半導体基板の製造方法 |
| JP2024048924A (ja) * | 2022-09-28 | 2024-04-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法、半導体基板の製造方法 |
| CN119875517B (zh) * | 2025-01-15 | 2025-09-19 | 江苏超芯星半导体有限公司 | 一种金刚石用抛光液及其制备方法和应用 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009278061A (ja) * | 2008-04-16 | 2009-11-26 | Hitachi Chem Co Ltd | Ｃｍｐ用研磨液及び研磨方法 |
| US7857985B2 (en) * | 2006-01-30 | 2010-12-28 | Fujifilm Corporation | Metal-polishing liquid and chemical mechanical polishing method using the same |
| US20170243752A1 (en) * | 2014-08-29 | 2017-08-24 | Fujimi Incorporated | Polishing composition and method for producing polishing composition |
| US20190211228A1 (en) * | 2018-01-09 | 2019-07-11 | Cabot Microelectronics Corporation | Tungsten bulk polishing method with improved topography |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5022006B2 (ja) * | 2006-11-24 | 2012-09-12 | 石原産業株式会社 | 金属分散液の製造方法及び該金属分散液を用いて形成した電極、配線パターン、塗膜、その塗膜を形成した装飾物品 |
| US20100001229A1 (en) * | 2007-02-27 | 2010-01-07 | Hitachi Chemical Co., Ltd. | Cmp slurry for silicon film |
| JP2013120885A (ja) | 2011-12-08 | 2013-06-17 | Hitachi Chemical Co Ltd | Ｃｍｐ用研磨液及びこの研磨液を用いた研磨方法 |
| JP2013138053A (ja) | 2011-12-28 | 2013-07-11 | Fujimi Inc | 研磨用組成物 |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| JP6054149B2 (ja) * | 2012-11-15 | 2016-12-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| DE112013005718B4 (de) * | 2012-11-30 | 2016-05-25 | Nitta Haas Incorporated | Polierzusammensetzung |
| US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US10106704B2 (en) * | 2014-03-20 | 2018-10-23 | Fujimi Incorporated | Polishing composition, polishing method, and method for producing substrate |
| US20170342304A1 (en) * | 2015-01-19 | 2017-11-30 | Fujimi Incorporated | Polishing composition |
| US9771496B2 (en) * | 2015-10-28 | 2017-09-26 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant and cyclodextrin |
| JP7002635B2 (ja) | 2018-03-23 | 2022-01-20 | 富士フイルム株式会社 | 研磨液および化学的機械的研磨方法 |
| KR102723152B1 (ko) | 2018-03-23 | 2024-10-29 | 후지필름 가부시키가이샤 | 연마액 및 화학적 기계적 연마 방법 |
-
2019
- 2019-09-13 JP JP2019167314A patent/JP7414437B2/ja active Active
-
2020
- 2020-08-28 KR KR1020200109046A patent/KR102932731B1/ko active Active
- 2020-09-01 US US17/008,872 patent/US20210079264A1/en not_active Abandoned
- 2020-09-10 TW TW109131096A patent/TWI875807B/zh active
- 2020-09-11 CN CN202010953542.6A patent/CN112500798A/zh active Pending
-
2023
- 2023-10-24 JP JP2023182296A patent/JP7591634B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7857985B2 (en) * | 2006-01-30 | 2010-12-28 | Fujifilm Corporation | Metal-polishing liquid and chemical mechanical polishing method using the same |
| JP2009278061A (ja) * | 2008-04-16 | 2009-11-26 | Hitachi Chem Co Ltd | Ｃｍｐ用研磨液及び研磨方法 |
| US20170243752A1 (en) * | 2014-08-29 | 2017-08-24 | Fujimi Incorporated | Polishing composition and method for producing polishing composition |
| US20190211228A1 (en) * | 2018-01-09 | 2019-07-11 | Cabot Microelectronics Corporation | Tungsten bulk polishing method with improved topography |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112500798A (zh) | 2021-03-16 |
| JP2021042343A (ja) | 2021-03-18 |
| KR20210031822A (ko) | 2021-03-23 |
| KR102932731B1 (ko) | 2026-03-04 |
| JP2024008946A (ja) | 2024-01-19 |
| JP7591634B2 (ja) | 2024-11-28 |
| US20210079264A1 (en) | 2021-03-18 |
| JP7414437B2 (ja) | 2024-01-16 |
| TW202116966A (zh) | 2021-05-01 |
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