JP2023520835A5 - - Google Patents
Info
- Publication number
- JP2023520835A5 JP2023520835A5 JP2022542176A JP2022542176A JP2023520835A5 JP 2023520835 A5 JP2023520835 A5 JP 2023520835A5 JP 2022542176 A JP2022542176 A JP 2022542176A JP 2022542176 A JP2022542176 A JP 2022542176A JP 2023520835 A5 JP2023520835 A5 JP 2023520835A5
- Authority
- JP
- Japan
- Prior art keywords
- tungsten
- thickness
- approximately
- arrow
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/845,749 | 2020-04-10 | ||
| US16/845,749 US11417568B2 (en) | 2020-04-10 | 2020-04-10 | Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill |
| PCT/US2021/026446 WO2021207537A1 (en) | 2020-04-10 | 2021-04-08 | Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023520835A JP2023520835A (ja) | 2023-05-22 |
| JP2023520835A5 true JP2023520835A5 (https=) | 2024-04-18 |
| JP7704758B2 JP7704758B2 (ja) | 2025-07-08 |
Family
ID=78006845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022542176A Active JP7704758B2 (ja) | 2020-04-10 | 2021-04-08 | ボトムアップ間隙充填のための誘電体層上へのタングステンの選択的堆積の方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11417568B2 (https=) |
| JP (1) | JP7704758B2 (https=) |
| KR (1) | KR20220167369A (https=) |
| CN (1) | CN115039210A (https=) |
| TW (1) | TWI868345B (https=) |
| WO (1) | WO2021207537A1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| KR20210081436A (ko) | 2018-11-19 | 2021-07-01 | 램 리써치 코포레이션 | 텅스텐을 위한 몰리브덴 템플릿들 |
| SG11202108217UA (en) | 2019-01-28 | 2021-08-30 | Lam Res Corp | Deposition of metal films |
| WO2021046058A1 (en) | 2019-09-03 | 2021-03-11 | Lam Research Corporation | Molybdenum deposition |
| CN114667600A (zh) | 2019-10-15 | 2022-06-24 | 朗姆研究公司 | 钼填充 |
| JP7686761B2 (ja) | 2021-02-23 | 2025-06-02 | ラム リサーチ コーポレーション | ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積 |
| WO2022221210A1 (en) | 2021-04-14 | 2022-10-20 | Lam Research Corporation | Deposition of molybdenum |
| US12588475B2 (en) | 2021-05-14 | 2026-03-24 | Lam Research Corporation | High selectivity doped hardmask films |
| EP4511875A1 (en) * | 2022-04-19 | 2025-02-26 | Lam Research Corporation | Molybdenum integration and void-free fill |
| US20230343643A1 (en) * | 2022-04-25 | 2023-10-26 | Applied Materials, Inc. | Gradient oxidation and etch for pvd metal as bottom liner in bottom up gap fill |
| KR20250022865A (ko) * | 2022-06-22 | 2025-02-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 텅스텐 갭-충전을 위한 텅스텐 표면의 처리 |
| US12559836B2 (en) * | 2022-07-29 | 2026-02-24 | Applied Materials, Inc. | Bottom up molybdenum gapfill |
| US12588443B2 (en) | 2022-09-27 | 2026-03-24 | Applied Materials Inc. | Methods for forming low resistivity contacts |
| US20240371654A1 (en) * | 2023-05-03 | 2024-11-07 | Applied Materials, Inc. | Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration |
| US20240420949A1 (en) * | 2023-06-15 | 2024-12-19 | Applied Materials, Inc. | Doped silicon oxide for bottom-up deposition |
| US12374568B2 (en) * | 2023-08-29 | 2025-07-29 | Applied Materials, Inc. | One chamber multi-station selective metal removal |
| US20250259886A1 (en) * | 2024-02-12 | 2025-08-14 | Applied Materials, Inc. | Methods of manufacturing interconnect structures |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9105943D0 (en) * | 1991-03-20 | 1991-05-08 | Philips Nv | A method of manufacturing a semiconductor device |
| JPH05152250A (ja) * | 1991-11-26 | 1993-06-18 | Sony Corp | メタルプラグの形成方法 |
| JP3408463B2 (ja) | 1999-08-17 | 2003-05-19 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6551929B1 (en) * | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| US7504006B2 (en) | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
| FR2896621B1 (fr) * | 2006-01-23 | 2008-06-27 | St Microelectronics Sa | Systeme electro-optique integre |
| US20070259111A1 (en) * | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
| US7737026B2 (en) | 2007-03-29 | 2010-06-15 | International Business Machines Corporation | Structure and method for low resistance interconnections |
| US8551885B2 (en) * | 2008-08-29 | 2013-10-08 | Novellus Systems, Inc. | Method for reducing tungsten roughness and improving reflectivity |
| US9034768B2 (en) | 2010-07-09 | 2015-05-19 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
| US9653353B2 (en) * | 2009-08-04 | 2017-05-16 | Novellus Systems, Inc. | Tungsten feature fill |
| US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| US20140273451A1 (en) | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Tungsten deposition sequence |
| US9831183B2 (en) | 2014-08-07 | 2017-11-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact structure and method of forming |
| US9899258B1 (en) * | 2016-09-30 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal liner overhang reduction and manufacturing method thereof |
| US10319591B2 (en) | 2016-11-08 | 2019-06-11 | Applied Materials, Inc. | Geometric control of bottom-up pillars for patterning applications |
| TWI719316B (zh) | 2017-06-12 | 2021-02-21 | 美商應用材料股份有限公司 | 利用鎢氧化還原之無縫鎢填充 |
| DE102017130683B4 (de) | 2017-12-20 | 2022-02-03 | Infineon Technologies Dresden Gmbh | Kontaktloch und Verfahren zum Herstellen des Kontaktlochs |
| US20190198392A1 (en) | 2017-12-22 | 2019-06-27 | Applied Materials, Inc. | Methods of etching a tungsten layer |
-
2020
- 2020-04-10 US US16/845,749 patent/US11417568B2/en active Active
-
2021
- 2021-04-08 KR KR1020227024394A patent/KR20220167369A/ko active Pending
- 2021-04-08 WO PCT/US2021/026446 patent/WO2021207537A1/en not_active Ceased
- 2021-04-08 JP JP2022542176A patent/JP7704758B2/ja active Active
- 2021-04-08 CN CN202180012393.6A patent/CN115039210A/zh active Pending
- 2021-04-09 TW TW110112892A patent/TWI868345B/zh active
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