JP2014533437A5 - - Google Patents

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Publication number
JP2014533437A5
JP2014533437A5 JP2014541176A JP2014541176A JP2014533437A5 JP 2014533437 A5 JP2014533437 A5 JP 2014533437A5 JP 2014541176 A JP2014541176 A JP 2014541176A JP 2014541176 A JP2014541176 A JP 2014541176A JP 2014533437 A5 JP2014533437 A5 JP 2014533437A5
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JP
Japan
Prior art keywords
containing layer
nitrogen
floating gate
oxygen
layer
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JP2014541176A
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English (en)
Japanese (ja)
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JP2014533437A (ja
JP6104928B2 (ja
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Priority claimed from US13/294,608 external-priority patent/US8994089B2/en
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Publication of JP2014533437A publication Critical patent/JP2014533437A/ja
Publication of JP2014533437A5 publication Critical patent/JP2014533437A5/ja
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Publication of JP6104928B2 publication Critical patent/JP6104928B2/ja
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JP2014541176A 2011-11-11 2012-11-07 層間多結晶シリコン誘電体キャップおよびその形成方法 Active JP6104928B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/294,608 2011-11-11
US13/294,608 US8994089B2 (en) 2011-11-11 2011-11-11 Interlayer polysilicon dielectric cap and method of forming thereof
PCT/US2012/063841 WO2013070685A1 (en) 2011-11-11 2012-11-07 Interlayer polysilicon dielectric cap and method of forming thereof

Publications (3)

Publication Number Publication Date
JP2014533437A JP2014533437A (ja) 2014-12-11
JP2014533437A5 true JP2014533437A5 (https=) 2015-12-24
JP6104928B2 JP6104928B2 (ja) 2017-03-29

Family

ID=48279770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014541176A Active JP6104928B2 (ja) 2011-11-11 2012-11-07 層間多結晶シリコン誘電体キャップおよびその形成方法

Country Status (5)

Country Link
US (1) US8994089B2 (https=)
JP (1) JP6104928B2 (https=)
KR (1) KR102092760B1 (https=)
CN (1) CN103930992B (https=)
WO (1) WO2013070685A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8981466B2 (en) * 2013-03-11 2015-03-17 International Business Machines Corporation Multilayer dielectric structures for semiconductor nano-devices
US10192747B2 (en) 2014-01-07 2019-01-29 Cypress Semiconductor Corporation Multi-layer inter-gate dielectric structure and method of manufacturing thereof
US20150194537A1 (en) * 2014-01-07 2015-07-09 Spansion Llc Multi-layer inter-gate dielectric structure
US20160343722A1 (en) * 2015-05-21 2016-11-24 Sandisk Technologies Inc. Nonvolatile storage with gap in inter-gate dielectric
US11588031B2 (en) * 2019-12-30 2023-02-21 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure for memory device and method for forming the same
US11587796B2 (en) * 2020-01-23 2023-02-21 Applied Materials, Inc. 3D-NAND memory cell structure

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4762036B2 (ja) * 2006-04-14 2011-08-31 株式会社東芝 半導体装置
JP4921848B2 (ja) * 2006-05-09 2012-04-25 株式会社東芝 半導体装置およびその製造方法
JP4764267B2 (ja) * 2006-06-27 2011-08-31 株式会社東芝 半導体装置およびその製造方法
JP4331189B2 (ja) * 2006-09-20 2009-09-16 株式会社東芝 不揮発性半導体メモリ
KR100856165B1 (ko) * 2006-09-29 2008-09-03 주식회사 하이닉스반도체 플래시 메모리 소자의 제조 방법
JP2008098510A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 不揮発性半導体記憶装置
JP4855958B2 (ja) * 2007-01-25 2012-01-18 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP5313547B2 (ja) * 2008-05-09 2013-10-09 東京エレクトロン株式会社 半導体装置の製造方法
KR101587198B1 (ko) * 2008-07-09 2016-01-20 샌디스크 테크놀로지스, 인코포레이티드 플로팅 게이트 위의 유전체 캡
US20100093142A1 (en) * 2008-10-09 2010-04-15 Powerchip Semiconductor Corp. Method of fabricating device
JP5361328B2 (ja) * 2008-10-27 2013-12-04 株式会社東芝 不揮発性半導体記憶装置の製造方法
WO2010117703A2 (en) * 2009-03-31 2010-10-14 Applied Materials, Inc. Method of selective nitridation
JP2011077321A (ja) * 2009-09-30 2011-04-14 Tokyo Electron Ltd 選択的プラズマ窒化処理方法及びプラズマ窒化処理装置
US8748259B2 (en) * 2010-03-02 2014-06-10 Applied Materials, Inc. Method and apparatus for single step selective nitridation
KR20110114970A (ko) * 2010-04-14 2011-10-20 삼성전자주식회사 플래시 메모리 소자의 제조 방법
JP2012009700A (ja) * 2010-06-25 2012-01-12 Toshiba Corp 半導体記憶装置及びその製造方法
JP2012089817A (ja) * 2010-09-21 2012-05-10 Toshiba Corp 半導体記憶装置およびその製造方法
JP2012114199A (ja) * 2010-11-24 2012-06-14 Toshiba Corp 半導体装置および半導体装置の製造方法

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