JP7704758B2 - ボトムアップ間隙充填のための誘電体層上へのタングステンの選択的堆積の方法 - Google Patents

ボトムアップ間隙充填のための誘電体層上へのタングステンの選択的堆積の方法 Download PDF

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JP7704758B2
JP7704758B2 JP2022542176A JP2022542176A JP7704758B2 JP 7704758 B2 JP7704758 B2 JP 7704758B2 JP 2022542176 A JP2022542176 A JP 2022542176A JP 2022542176 A JP2022542176 A JP 2022542176A JP 7704758 B2 JP7704758 B2 JP 7704758B2
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tungsten
thickness
substrate
tungsten oxide
layer
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JP2023520835A (ja
JP2023520835A5 (https=
Inventor
ウェイ レイ
イー シュー
ユー レイ
テ ホン ハ
レイモンド ハング
シリッシュ エイ ペテ
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate

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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
JP2022542176A 2020-04-10 2021-04-08 ボトムアップ間隙充填のための誘電体層上へのタングステンの選択的堆積の方法 Active JP7704758B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/845,749 2020-04-10
US16/845,749 US11417568B2 (en) 2020-04-10 2020-04-10 Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill
PCT/US2021/026446 WO2021207537A1 (en) 2020-04-10 2021-04-08 Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill

Publications (3)

Publication Number Publication Date
JP2023520835A JP2023520835A (ja) 2023-05-22
JP2023520835A5 JP2023520835A5 (https=) 2024-04-18
JP7704758B2 true JP7704758B2 (ja) 2025-07-08

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JP2022542176A Active JP7704758B2 (ja) 2020-04-10 2021-04-08 ボトムアップ間隙充填のための誘電体層上へのタングステンの選択的堆積の方法

Country Status (6)

Country Link
US (1) US11417568B2 (https=)
JP (1) JP7704758B2 (https=)
KR (1) KR20220167369A (https=)
CN (1) CN115039210A (https=)
TW (1) TWI868345B (https=)
WO (1) WO2021207537A1 (https=)

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US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR20210081436A (ko) 2018-11-19 2021-07-01 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
WO2021046058A1 (en) 2019-09-03 2021-03-11 Lam Research Corporation Molybdenum deposition
CN114667600A (zh) 2019-10-15 2022-06-24 朗姆研究公司 钼填充
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
US12588475B2 (en) 2021-05-14 2026-03-24 Lam Research Corporation High selectivity doped hardmask films
EP4511875A1 (en) * 2022-04-19 2025-02-26 Lam Research Corporation Molybdenum integration and void-free fill
US20230343643A1 (en) * 2022-04-25 2023-10-26 Applied Materials, Inc. Gradient oxidation and etch for pvd metal as bottom liner in bottom up gap fill
KR20250022865A (ko) * 2022-06-22 2025-02-17 어플라이드 머티어리얼스, 인코포레이티드 텅스텐 갭-충전을 위한 텅스텐 표면의 처리
US12559836B2 (en) * 2022-07-29 2026-02-24 Applied Materials, Inc. Bottom up molybdenum gapfill
US12588443B2 (en) 2022-09-27 2026-03-24 Applied Materials Inc. Methods for forming low resistivity contacts
US20240371654A1 (en) * 2023-05-03 2024-11-07 Applied Materials, Inc. Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration
US20240420949A1 (en) * 2023-06-15 2024-12-19 Applied Materials, Inc. Doped silicon oxide for bottom-up deposition
US12374568B2 (en) * 2023-08-29 2025-07-29 Applied Materials, Inc. One chamber multi-station selective metal removal
US20250259886A1 (en) * 2024-02-12 2025-08-14 Applied Materials, Inc. Methods of manufacturing interconnect structures

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WO2018231816A1 (en) 2017-06-12 2018-12-20 Applied Materials, Inc. Seamless tungsten fill by tungsten oxidation-reduction
JP2019114791A (ja) 2017-12-22 2019-07-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ タングステン層をエッチングする方法

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US20180130657A1 (en) 2016-11-08 2018-05-10 Applied Materials, Inc. Geometric Control Of Bottom-Up Pillars For Patterning Applications
JP2020501344A (ja) 2016-11-08 2020-01-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ パターニング用途のためのボトムアップ柱状体の形状制御
WO2018231816A1 (en) 2017-06-12 2018-12-20 Applied Materials, Inc. Seamless tungsten fill by tungsten oxidation-reduction
JP2020523801A (ja) 2017-06-12 2020-08-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ タングステン酸化還元による、シームのないタングステン充填
JP2019114791A (ja) 2017-12-22 2019-07-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ タングステン層をエッチングする方法

Also Published As

Publication number Publication date
US11417568B2 (en) 2022-08-16
JP2023520835A (ja) 2023-05-22
CN115039210A (zh) 2022-09-09
WO2021207537A1 (en) 2021-10-14
US20210320034A1 (en) 2021-10-14
TWI868345B (zh) 2025-01-01
TW202141585A (zh) 2021-11-01
KR20220167369A (ko) 2022-12-20

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