KR20220167369A - 상향식 갭 충전을 위해 유전체 층 위에 텅스텐을 선택적으로 증착하기 위한 방법들 - Google Patents

상향식 갭 충전을 위해 유전체 층 위에 텅스텐을 선택적으로 증착하기 위한 방법들 Download PDF

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KR20220167369A
KR20220167369A KR1020227024394A KR20227024394A KR20220167369A KR 20220167369 A KR20220167369 A KR 20220167369A KR 1020227024394 A KR1020227024394 A KR 1020227024394A KR 20227024394 A KR20227024394 A KR 20227024394A KR 20220167369 A KR20220167369 A KR 20220167369A
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South Korea
Prior art keywords
tungsten
thickness
over
tungsten portion
substrate
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KR1020227024394A
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Korean (ko)
Inventor
웨이 레이
이 쑤
유 레이
태 홍 하
레이몬드 훙
시리쉬 에이. 페데
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20220167369A publication Critical patent/KR20220167369A/ko
Pending legal-status Critical Current

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    • H01L21/76883—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H01L21/02244—
    • H01L21/02252—
    • H01L21/2855—
    • H01L21/32136—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate

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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
KR1020227024394A 2020-04-10 2021-04-08 상향식 갭 충전을 위해 유전체 층 위에 텅스텐을 선택적으로 증착하기 위한 방법들 Pending KR20220167369A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/845,749 2020-04-10
US16/845,749 US11417568B2 (en) 2020-04-10 2020-04-10 Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill
PCT/US2021/026446 WO2021207537A1 (en) 2020-04-10 2021-04-08 Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill

Publications (1)

Publication Number Publication Date
KR20220167369A true KR20220167369A (ko) 2022-12-20

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Application Number Title Priority Date Filing Date
KR1020227024394A Pending KR20220167369A (ko) 2020-04-10 2021-04-08 상향식 갭 충전을 위해 유전체 층 위에 텅스텐을 선택적으로 증착하기 위한 방법들

Country Status (6)

Country Link
US (1) US11417568B2 (https=)
JP (1) JP7704758B2 (https=)
KR (1) KR20220167369A (https=)
CN (1) CN115039210A (https=)
TW (1) TWI868345B (https=)
WO (1) WO2021207537A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR20210081436A (ko) 2018-11-19 2021-07-01 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
WO2021046058A1 (en) 2019-09-03 2021-03-11 Lam Research Corporation Molybdenum deposition
CN114667600A (zh) 2019-10-15 2022-06-24 朗姆研究公司 钼填充
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
US12588475B2 (en) 2021-05-14 2026-03-24 Lam Research Corporation High selectivity doped hardmask films
EP4511875A1 (en) * 2022-04-19 2025-02-26 Lam Research Corporation Molybdenum integration and void-free fill
US20230343643A1 (en) * 2022-04-25 2023-10-26 Applied Materials, Inc. Gradient oxidation and etch for pvd metal as bottom liner in bottom up gap fill
KR20250022865A (ko) * 2022-06-22 2025-02-17 어플라이드 머티어리얼스, 인코포레이티드 텅스텐 갭-충전을 위한 텅스텐 표면의 처리
US12559836B2 (en) * 2022-07-29 2026-02-24 Applied Materials, Inc. Bottom up molybdenum gapfill
US12588443B2 (en) 2022-09-27 2026-03-24 Applied Materials Inc. Methods for forming low resistivity contacts
US20240371654A1 (en) * 2023-05-03 2024-11-07 Applied Materials, Inc. Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration
US20240420949A1 (en) * 2023-06-15 2024-12-19 Applied Materials, Inc. Doped silicon oxide for bottom-up deposition
US12374568B2 (en) * 2023-08-29 2025-07-29 Applied Materials, Inc. One chamber multi-station selective metal removal
US20250259886A1 (en) * 2024-02-12 2025-08-14 Applied Materials, Inc. Methods of manufacturing interconnect structures

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9105943D0 (en) * 1991-03-20 1991-05-08 Philips Nv A method of manufacturing a semiconductor device
JPH05152250A (ja) * 1991-11-26 1993-06-18 Sony Corp メタルプラグの形成方法
JP3408463B2 (ja) 1999-08-17 2003-05-19 日本電気株式会社 半導体装置の製造方法
US6551929B1 (en) * 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
FR2896621B1 (fr) * 2006-01-23 2008-06-27 St Microelectronics Sa Systeme electro-optique integre
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
US7737026B2 (en) 2007-03-29 2010-06-15 International Business Machines Corporation Structure and method for low resistance interconnections
US8551885B2 (en) * 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
US9034768B2 (en) 2010-07-09 2015-05-19 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US9653353B2 (en) * 2009-08-04 2017-05-16 Novellus Systems, Inc. Tungsten feature fill
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US20140273451A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Tungsten deposition sequence
US9831183B2 (en) 2014-08-07 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure and method of forming
US9899258B1 (en) * 2016-09-30 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Metal liner overhang reduction and manufacturing method thereof
US10319591B2 (en) 2016-11-08 2019-06-11 Applied Materials, Inc. Geometric control of bottom-up pillars for patterning applications
TWI719316B (zh) 2017-06-12 2021-02-21 美商應用材料股份有限公司 利用鎢氧化還原之無縫鎢填充
DE102017130683B4 (de) 2017-12-20 2022-02-03 Infineon Technologies Dresden Gmbh Kontaktloch und Verfahren zum Herstellen des Kontaktlochs
US20190198392A1 (en) 2017-12-22 2019-06-27 Applied Materials, Inc. Methods of etching a tungsten layer

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Publication number Publication date
US11417568B2 (en) 2022-08-16
JP7704758B2 (ja) 2025-07-08
JP2023520835A (ja) 2023-05-22
CN115039210A (zh) 2022-09-09
WO2021207537A1 (en) 2021-10-14
US20210320034A1 (en) 2021-10-14
TWI868345B (zh) 2025-01-01
TW202141585A (zh) 2021-11-01

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