JP2023513262A5 - - Google Patents
Info
- Publication number
- JP2023513262A5 JP2023513262A5 JP2022548476A JP2022548476A JP2023513262A5 JP 2023513262 A5 JP2023513262 A5 JP 2023513262A5 JP 2022548476 A JP2022548476 A JP 2022548476A JP 2022548476 A JP2022548476 A JP 2022548476A JP 2023513262 A5 JP2023513262 A5 JP 2023513262A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dopant source
- gallium nitride
- nitride layer
- magnesium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062975075P | 2020-02-11 | 2020-02-11 | |
| US62/975,075 | 2020-02-11 | ||
| PCT/US2021/017434 WO2021163175A1 (en) | 2020-02-11 | 2021-02-10 | Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023513262A JP2023513262A (ja) | 2023-03-30 |
| JP2023513262A5 true JP2023513262A5 (https=) | 2024-02-21 |
| JP7701364B2 JP7701364B2 (ja) | 2025-07-01 |
Family
ID=77177870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022548476A Active JP7701364B2 (ja) | 2020-02-11 | 2021-02-10 | スパッタリングされたマグネシウム源を使用して窒化ガリウム材料中のマグネシウムを拡散させるための方法およびシステム |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11881404B2 (https=) |
| EP (1) | EP4104214A4 (https=) |
| JP (1) | JP7701364B2 (https=) |
| KR (1) | KR102941502B1 (https=) |
| CN (1) | CN115088079A (https=) |
| TW (1) | TWI875952B (https=) |
| WO (1) | WO2021163175A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12142642B2 (en) * | 2018-06-20 | 2024-11-12 | Lawrence Livermore National Security, Llc | Field assisted interfacial diffusion doping through heterostructure design |
| US12132103B2 (en) * | 2021-04-15 | 2024-10-29 | Vanguard International Semiconductor Corporation | High electron mobility transistor and fabrication method thereof |
| CN114373798B (zh) * | 2021-12-06 | 2025-09-26 | 华南理工大学 | 一种增强型GaN HEMT射频器件及其制备方法 |
| TWI822222B (zh) * | 2022-08-02 | 2023-11-11 | 華邦電子股份有限公司 | 半導體結構及其形成方法 |
| CN115911194A (zh) * | 2022-11-23 | 2023-04-04 | 安徽长飞先进半导体有限公司 | 一种基于Mg扩散法的p型GaN基薄膜及其制备方法 |
| WO2025147360A1 (en) * | 2024-01-03 | 2025-07-10 | The Board Of Trustees Of The Leland Stanford Junior University. | Devices and methods involving a diffusion-dopant profile in semiconductor devices |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4111719A (en) * | 1976-12-06 | 1978-09-05 | International Business Machines Corporation | Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium |
| CA1186785A (en) * | 1982-09-07 | 1985-05-07 | Her Majesty The Queen, In Right Of Canada, As Represented By The Minister Of National Defence | Electret semiconductor solar cell |
| JPH08306634A (ja) * | 1995-05-11 | 1996-11-22 | Oki Electric Ind Co Ltd | 化合物半導体への選択固相拡散方法 |
| US6274894B1 (en) * | 1999-08-17 | 2001-08-14 | Advanced Micro Devices, Inc. | Low-bandgap source and drain formation for short-channel MOS transistors |
| JP2008078332A (ja) | 2006-09-20 | 2008-04-03 | Toyota Central R&D Labs Inc | ｐ型のＩＩＩ族窒化物半導体の製造方法、およびｐ型のＩＩＩ族窒化物半導体用の電極の製造方法 |
| JP4740083B2 (ja) * | 2006-10-05 | 2011-08-03 | 株式会社東芝 | 半導体装置、およびその製造方法 |
| JP5103979B2 (ja) * | 2007-03-27 | 2012-12-19 | 豊田合成株式会社 | ＩＩＩ族窒化物系化合物半導体に対する電極形成方法及びｐ型ＩＩＩ族窒化物系化合物半導体の製造方法 |
| JP4805299B2 (ja) * | 2008-03-28 | 2011-11-02 | 古河電気工業株式会社 | 電界効果トランジスタの製造方法 |
| US8030188B2 (en) * | 2008-12-05 | 2011-10-04 | Electronics And Telecommunications Research Institute | Methods of forming a compound semiconductor device including a diffusion region |
| JP2010245465A (ja) | 2009-04-10 | 2010-10-28 | Mitsubishi Electric Corp | 窒化物系半導体レーザ及びその製造方法 |
| US7977151B2 (en) * | 2009-04-21 | 2011-07-12 | Cbrite Inc. | Double self-aligned metal oxide TFT |
| US8569158B2 (en) * | 2011-03-31 | 2013-10-29 | Tokyo Electron Limited | Method for forming ultra-shallow doping regions by solid phase diffusion |
| US8846482B2 (en) * | 2011-09-22 | 2014-09-30 | Avogy, Inc. | Method and system for diffusion and implantation in gallium nitride based devices |
| JP5902010B2 (ja) | 2012-03-19 | 2016-04-13 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
| US20140065799A1 (en) * | 2012-09-03 | 2014-03-06 | Intermolecular, Inc. | Methods and Systems for Low Resistance Contact Formation |
| TW201517133A (zh) | 2013-10-07 | 2015-05-01 | 應用材料股份有限公司 | 使用熱佈植與奈秒退火致使銦鋁鎵氮化物材料系統中摻雜劑的高活化 |
| FR3026557B1 (fr) * | 2014-09-26 | 2018-03-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de dopage d'un semi-conducteur a base de gan |
| WO2016126912A1 (en) | 2015-02-06 | 2016-08-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditions |
| US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
| US10297445B2 (en) | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
| CN109716508B (zh) | 2016-06-24 | 2023-08-15 | 克罗米斯有限公司 | 多晶陶瓷衬底及其制造方法 |
| JP6683044B2 (ja) | 2016-07-12 | 2020-04-15 | 富士電機株式会社 | 半導体装置の製造方法 |
| PL3281915T3 (pl) | 2016-08-10 | 2019-09-30 | Umicore | Prekursory materiałów katody zawierających tlenek metalu przejściowego litu do baterii wielokrotnego ładowania |
| CN111919281B (zh) * | 2018-02-12 | 2024-04-02 | 克罗米斯有限公司 | 通过扩散来在氮化镓材料中形成掺杂区的方法及系统 |
| US10930506B2 (en) | 2018-06-20 | 2021-02-23 | Lawrence Livermore National Security, Llc | Gallidation assisted impurity doping |
-
2021
- 2021-02-10 US US17/172,417 patent/US11881404B2/en active Active
- 2021-02-10 JP JP2022548476A patent/JP7701364B2/ja active Active
- 2021-02-10 EP EP21752895.9A patent/EP4104214A4/en active Pending
- 2021-02-10 CN CN202180013479.0A patent/CN115088079A/zh active Pending
- 2021-02-10 KR KR1020227031479A patent/KR102941502B1/ko active Active
- 2021-02-10 WO PCT/US2021/017434 patent/WO2021163175A1/en not_active Ceased
- 2021-02-17 TW TW110105247A patent/TWI875952B/zh active
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