CN100428504C - 一种半导体器件及其制备方法 - Google Patents
一种半导体器件及其制备方法 Download PDFInfo
- Publication number
- CN100428504C CN100428504C CNB2003101056152A CN200310105615A CN100428504C CN 100428504 C CN100428504 C CN 100428504C CN B2003101056152 A CNB2003101056152 A CN B2003101056152A CN 200310105615 A CN200310105615 A CN 200310105615A CN 100428504 C CN100428504 C CN 100428504C
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- protective layer
- contact
- electrode metal
- contact electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims description 17
- 239000011241 protective layer Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000000137 annealing Methods 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- 239000010410 layer Substances 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000007850 degeneration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
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- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101056152A CN100428504C (zh) | 2003-11-06 | 2003-11-06 | 一种半导体器件及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101056152A CN100428504C (zh) | 2003-11-06 | 2003-11-06 | 一种半导体器件及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1614792A CN1614792A (zh) | 2005-05-11 |
CN100428504C true CN100428504C (zh) | 2008-10-22 |
Family
ID=34757347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101056152A Expired - Lifetime CN100428504C (zh) | 2003-11-06 | 2003-11-06 | 一种半导体器件及其制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN100428504C (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130221B (zh) * | 2010-01-13 | 2013-03-27 | 晶元光电股份有限公司 | 发光二极管的形成方法 |
CN103811992A (zh) * | 2014-02-13 | 2014-05-21 | 廉鹏 | 一种半导体激光器芯片及其制造方法 |
CN103811991B (zh) * | 2014-02-13 | 2017-05-24 | 马鞍山思派科创科技有限公司 | 一种提高半导体激光器芯片散热效率的方法 |
CN105336568A (zh) * | 2014-07-10 | 2016-02-17 | 北大方正集团有限公司 | 功率器件快速退火方法和功率器件 |
CN109817586A (zh) * | 2018-12-25 | 2019-05-28 | 厦门市三安集成电路有限公司 | 高温退火时保护功率器件金属接触的方法和金属接触结构 |
CN112688168B (zh) * | 2020-12-24 | 2022-10-11 | 厦门三安光电有限公司 | 激光二极管及其制备方法 |
CN112993112B (zh) * | 2021-02-02 | 2022-08-12 | 华灿光电(苏州)有限公司 | 发光二极管芯片制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5373175A (en) * | 1992-10-23 | 1994-12-13 | Sony Corporation | Ohmic electrode and a light emitting device |
US5760423A (en) * | 1996-11-08 | 1998-06-02 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device |
JP2002314131A (ja) * | 2001-04-10 | 2002-10-25 | Showa Denko Kk | 透光性電極及びその製造方法並びにそれを用いたiii族窒化物半導体発光素子 |
-
2003
- 2003-11-06 CN CNB2003101056152A patent/CN100428504C/zh not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5373175A (en) * | 1992-10-23 | 1994-12-13 | Sony Corporation | Ohmic electrode and a light emitting device |
US5760423A (en) * | 1996-11-08 | 1998-06-02 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device |
JP2002314131A (ja) * | 2001-04-10 | 2002-10-25 | Showa Denko Kk | 透光性電極及びその製造方法並びにそれを用いたiii族窒化物半導体発光素子 |
Also Published As
Publication number | Publication date |
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CN1614792A (zh) | 2005-05-11 |
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Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Lightning Optoectronic Technology (Shenzhen) Co.,Ltd. Assignor: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Contract record no.: 2010440020065 Denomination of invention: Semiconductor device and preparation method thereof Granted publication date: 20081022 License type: Exclusive License Open date: 20050511 Record date: 20100607 |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231106 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20081022 |