KR102941502B1 - 스퍼터링된 마그네슘 소스를 이용한 질화갈륨 물질에서의 마그네슘 확산 방법 및 시스템 - Google Patents
스퍼터링된 마그네슘 소스를 이용한 질화갈륨 물질에서의 마그네슘 확산 방법 및 시스템Info
- Publication number
- KR102941502B1 KR102941502B1 KR1020227031479A KR20227031479A KR102941502B1 KR 102941502 B1 KR102941502 B1 KR 102941502B1 KR 1020227031479 A KR1020227031479 A KR 1020227031479A KR 20227031479 A KR20227031479 A KR 20227031479A KR 102941502 B1 KR102941502 B1 KR 102941502B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- gallium nitride
- nitride layer
- forming
- magnesium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062975075P | 2020-02-11 | 2020-02-11 | |
| US62/975,075 | 2020-02-11 | ||
| PCT/US2021/017434 WO2021163175A1 (en) | 2020-02-11 | 2021-02-10 | Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20220150908A KR20220150908A (ko) | 2022-11-11 |
| KR102941502B1 true KR102941502B1 (ko) | 2026-03-18 |
Family
ID=77177870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227031479A Active KR102941502B1 (ko) | 2020-02-11 | 2021-02-10 | 스퍼터링된 마그네슘 소스를 이용한 질화갈륨 물질에서의 마그네슘 확산 방법 및 시스템 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11881404B2 (https=) |
| EP (1) | EP4104214A4 (https=) |
| JP (1) | JP7701364B2 (https=) |
| KR (1) | KR102941502B1 (https=) |
| CN (1) | CN115088079A (https=) |
| TW (1) | TWI875952B (https=) |
| WO (1) | WO2021163175A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12142642B2 (en) * | 2018-06-20 | 2024-11-12 | Lawrence Livermore National Security, Llc | Field assisted interfacial diffusion doping through heterostructure design |
| US12132103B2 (en) * | 2021-04-15 | 2024-10-29 | Vanguard International Semiconductor Corporation | High electron mobility transistor and fabrication method thereof |
| CN114373798B (zh) * | 2021-12-06 | 2025-09-26 | 华南理工大学 | 一种增强型GaN HEMT射频器件及其制备方法 |
| TWI822222B (zh) * | 2022-08-02 | 2023-11-11 | 華邦電子股份有限公司 | 半導體結構及其形成方法 |
| CN115911194A (zh) * | 2022-11-23 | 2023-04-04 | 安徽长飞先进半导体有限公司 | 一种基于Mg扩散法的p型GaN基薄膜及其制备方法 |
| WO2025147360A1 (en) * | 2024-01-03 | 2025-07-10 | The Board Of Trustees Of The Leland Stanford Junior University. | Devices and methods involving a diffusion-dopant profile in semiconductor devices |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160093698A1 (en) * | 2014-09-26 | 2016-03-31 | Commissariat Á L'energie Atomique Et Aux Energies Alternatives | METHOD FOR DOPING A GaN-BASE SEMICONDUCTOR |
| US20180019129A1 (en) * | 2016-07-12 | 2018-01-18 | Fuji Electric Co., Ltd. | Semiconductor device manufacturing method |
| US20180308686A1 (en) * | 2016-05-02 | 2018-10-25 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
| US20190252186A1 (en) * | 2018-02-12 | 2019-08-15 | QROMIS, Inc. | Method and system for forming doped regions by diffusion gallium nitride materials |
| US20190393038A1 (en) * | 2018-06-20 | 2019-12-26 | Lawrence Livermore National Security, Llc | Gallidation assisted impurity doping |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4111719A (en) * | 1976-12-06 | 1978-09-05 | International Business Machines Corporation | Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium |
| CA1186785A (en) * | 1982-09-07 | 1985-05-07 | Her Majesty The Queen, In Right Of Canada, As Represented By The Minister Of National Defence | Electret semiconductor solar cell |
| JPH08306634A (ja) * | 1995-05-11 | 1996-11-22 | Oki Electric Ind Co Ltd | 化合物半導体への選択固相拡散方法 |
| US6274894B1 (en) * | 1999-08-17 | 2001-08-14 | Advanced Micro Devices, Inc. | Low-bandgap source and drain formation for short-channel MOS transistors |
| JP2008078332A (ja) | 2006-09-20 | 2008-04-03 | Toyota Central R&D Labs Inc | ｐ型のＩＩＩ族窒化物半導体の製造方法、およびｐ型のＩＩＩ族窒化物半導体用の電極の製造方法 |
| JP4740083B2 (ja) * | 2006-10-05 | 2011-08-03 | 株式会社東芝 | 半導体装置、およびその製造方法 |
| JP5103979B2 (ja) * | 2007-03-27 | 2012-12-19 | 豊田合成株式会社 | ＩＩＩ族窒化物系化合物半導体に対する電極形成方法及びｐ型ＩＩＩ族窒化物系化合物半導体の製造方法 |
| JP4805299B2 (ja) * | 2008-03-28 | 2011-11-02 | 古河電気工業株式会社 | 電界効果トランジスタの製造方法 |
| US8030188B2 (en) * | 2008-12-05 | 2011-10-04 | Electronics And Telecommunications Research Institute | Methods of forming a compound semiconductor device including a diffusion region |
| JP2010245465A (ja) | 2009-04-10 | 2010-10-28 | Mitsubishi Electric Corp | 窒化物系半導体レーザ及びその製造方法 |
| US7977151B2 (en) * | 2009-04-21 | 2011-07-12 | Cbrite Inc. | Double self-aligned metal oxide TFT |
| US8569158B2 (en) * | 2011-03-31 | 2013-10-29 | Tokyo Electron Limited | Method for forming ultra-shallow doping regions by solid phase diffusion |
| US8846482B2 (en) * | 2011-09-22 | 2014-09-30 | Avogy, Inc. | Method and system for diffusion and implantation in gallium nitride based devices |
| JP5902010B2 (ja) | 2012-03-19 | 2016-04-13 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
| US20140065799A1 (en) * | 2012-09-03 | 2014-03-06 | Intermolecular, Inc. | Methods and Systems for Low Resistance Contact Formation |
| TW201517133A (zh) | 2013-10-07 | 2015-05-01 | 應用材料股份有限公司 | 使用熱佈植與奈秒退火致使銦鋁鎵氮化物材料系統中摻雜劑的高活化 |
| WO2016126912A1 (en) | 2015-02-06 | 2016-08-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditions |
| US10297445B2 (en) | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
| CN109716508B (zh) | 2016-06-24 | 2023-08-15 | 克罗米斯有限公司 | 多晶陶瓷衬底及其制造方法 |
| PL3281915T3 (pl) | 2016-08-10 | 2019-09-30 | Umicore | Prekursory materiałów katody zawierających tlenek metalu przejściowego litu do baterii wielokrotnego ładowania |
-
2021
- 2021-02-10 US US17/172,417 patent/US11881404B2/en active Active
- 2021-02-10 JP JP2022548476A patent/JP7701364B2/ja active Active
- 2021-02-10 EP EP21752895.9A patent/EP4104214A4/en active Pending
- 2021-02-10 CN CN202180013479.0A patent/CN115088079A/zh active Pending
- 2021-02-10 KR KR1020227031479A patent/KR102941502B1/ko active Active
- 2021-02-10 WO PCT/US2021/017434 patent/WO2021163175A1/en not_active Ceased
- 2021-02-17 TW TW110105247A patent/TWI875952B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160093698A1 (en) * | 2014-09-26 | 2016-03-31 | Commissariat Á L'energie Atomique Et Aux Energies Alternatives | METHOD FOR DOPING A GaN-BASE SEMICONDUCTOR |
| US20180308686A1 (en) * | 2016-05-02 | 2018-10-25 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
| US20180019129A1 (en) * | 2016-07-12 | 2018-01-18 | Fuji Electric Co., Ltd. | Semiconductor device manufacturing method |
| US20190252186A1 (en) * | 2018-02-12 | 2019-08-15 | QROMIS, Inc. | Method and system for forming doped regions by diffusion gallium nitride materials |
| US20190393038A1 (en) * | 2018-06-20 | 2019-12-26 | Lawrence Livermore National Security, Llc | Gallidation assisted impurity doping |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021163175A1 (en) | 2021-08-19 |
| EP4104214A1 (en) | 2022-12-21 |
| US20210249269A1 (en) | 2021-08-12 |
| KR20220150908A (ko) | 2022-11-11 |
| JP7701364B2 (ja) | 2025-07-01 |
| TWI875952B (zh) | 2025-03-11 |
| EP4104214A4 (en) | 2024-03-27 |
| JP2023513262A (ja) | 2023-03-30 |
| CN115088079A (zh) | 2022-09-20 |
| TW202147406A (zh) | 2021-12-16 |
| US11881404B2 (en) | 2024-01-23 |
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