CN115088079A - 使用溅射的镁源来扩散氮化镓材料中镁的方法和系统 - Google Patents

使用溅射的镁源来扩散氮化镓材料中镁的方法和系统 Download PDF

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Publication number
CN115088079A
CN115088079A CN202180013479.0A CN202180013479A CN115088079A CN 115088079 A CN115088079 A CN 115088079A CN 202180013479 A CN202180013479 A CN 202180013479A CN 115088079 A CN115088079 A CN 115088079A
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China
Prior art keywords
layer
magnesium
gallium nitride
dopant source
nitride layer
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CN202180013479.0A
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English (en)
Chinese (zh)
Inventor
奥兹古·阿克塔斯
弗拉基米尔·奥德诺博柳多夫
杰姆·巴斯切里
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Qromis Inc
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Qromis Inc
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Publication of CN115088079A publication Critical patent/CN115088079A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
CN202180013479.0A 2020-02-11 2021-02-10 使用溅射的镁源来扩散氮化镓材料中镁的方法和系统 Pending CN115088079A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062975075P 2020-02-11 2020-02-11
US62/975,075 2020-02-11
PCT/US2021/017434 WO2021163175A1 (en) 2020-02-11 2021-02-10 Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources

Publications (1)

Publication Number Publication Date
CN115088079A true CN115088079A (zh) 2022-09-20

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Country Status (7)

Country Link
US (1) US11881404B2 (https=)
EP (1) EP4104214A4 (https=)
JP (1) JP7701364B2 (https=)
KR (1) KR102941502B1 (https=)
CN (1) CN115088079A (https=)
TW (1) TWI875952B (https=)
WO (1) WO2021163175A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN115911194A (zh) * 2022-11-23 2023-04-04 安徽长飞先进半导体有限公司 一种基于Mg扩散法的p型GaN基薄膜及其制备方法

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US12142642B2 (en) * 2018-06-20 2024-11-12 Lawrence Livermore National Security, Llc Field assisted interfacial diffusion doping through heterostructure design
US12132103B2 (en) * 2021-04-15 2024-10-29 Vanguard International Semiconductor Corporation High electron mobility transistor and fabrication method thereof
CN114373798B (zh) * 2021-12-06 2025-09-26 华南理工大学 一种增强型GaN HEMT射频器件及其制备方法
TWI822222B (zh) * 2022-08-02 2023-11-11 華邦電子股份有限公司 半導體結構及其形成方法
WO2025147360A1 (en) * 2024-01-03 2025-07-10 The Board Of Trustees Of The Leland Stanford Junior University. Devices and methods involving a diffusion-dopant profile in semiconductor devices

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115911194A (zh) * 2022-11-23 2023-04-04 安徽长飞先进半导体有限公司 一种基于Mg扩散法的p型GaN基薄膜及其制备方法

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WO2021163175A1 (en) 2021-08-19
EP4104214A1 (en) 2022-12-21
US20210249269A1 (en) 2021-08-12
KR102941502B1 (ko) 2026-03-18
KR20220150908A (ko) 2022-11-11
JP7701364B2 (ja) 2025-07-01
TWI875952B (zh) 2025-03-11
EP4104214A4 (en) 2024-03-27
JP2023513262A (ja) 2023-03-30
TW202147406A (zh) 2021-12-16
US11881404B2 (en) 2024-01-23

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