TWI875952B - 使用濺射鎂源在氮化鎵材料中擴散鎂之方法與系統 - Google Patents

使用濺射鎂源在氮化鎵材料中擴散鎂之方法與系統 Download PDF

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Publication number
TWI875952B
TWI875952B TW110105247A TW110105247A TWI875952B TW I875952 B TWI875952 B TW I875952B TW 110105247 A TW110105247 A TW 110105247A TW 110105247 A TW110105247 A TW 110105247A TW I875952 B TWI875952 B TW I875952B
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Taiwan
Prior art keywords
layer
magnesium
gallium nitride
dopant source
nitride layer
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TW110105247A
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English (en)
Chinese (zh)
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TW202147406A (zh
Inventor
奧茲卡 阿克塔斯
佛拉迪米耶 歐諾博利伍鐸
傑姆 巴瑟里
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美商克若密斯股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture

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  • Recrystallisation Techniques (AREA)
TW110105247A 2020-02-11 2021-02-17 使用濺射鎂源在氮化鎵材料中擴散鎂之方法與系統 TWI875952B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062975075P 2020-02-11 2020-02-11
US62/975,075 2020-02-11

Publications (2)

Publication Number Publication Date
TW202147406A TW202147406A (zh) 2021-12-16
TWI875952B true TWI875952B (zh) 2025-03-11

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Country Status (7)

Country Link
US (1) US11881404B2 (https=)
EP (1) EP4104214A4 (https=)
JP (1) JP7701364B2 (https=)
KR (1) KR102941502B1 (https=)
CN (1) CN115088079A (https=)
TW (1) TWI875952B (https=)
WO (1) WO2021163175A1 (https=)

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US12142642B2 (en) * 2018-06-20 2024-11-12 Lawrence Livermore National Security, Llc Field assisted interfacial diffusion doping through heterostructure design
US12132103B2 (en) * 2021-04-15 2024-10-29 Vanguard International Semiconductor Corporation High electron mobility transistor and fabrication method thereof
CN114373798B (zh) * 2021-12-06 2025-09-26 华南理工大学 一种增强型GaN HEMT射频器件及其制备方法
TWI822222B (zh) * 2022-08-02 2023-11-11 華邦電子股份有限公司 半導體結構及其形成方法
CN115911194A (zh) * 2022-11-23 2023-04-04 安徽长飞先进半导体有限公司 一种基于Mg扩散法的p型GaN基薄膜及其制备方法
WO2025147360A1 (en) * 2024-01-03 2025-07-10 The Board Of Trustees Of The Leland Stanford Junior University. Devices and methods involving a diffusion-dopant profile in semiconductor devices

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Publication number Publication date
WO2021163175A1 (en) 2021-08-19
EP4104214A1 (en) 2022-12-21
US20210249269A1 (en) 2021-08-12
KR102941502B1 (ko) 2026-03-18
KR20220150908A (ko) 2022-11-11
JP7701364B2 (ja) 2025-07-01
EP4104214A4 (en) 2024-03-27
JP2023513262A (ja) 2023-03-30
CN115088079A (zh) 2022-09-20
TW202147406A (zh) 2021-12-16
US11881404B2 (en) 2024-01-23

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