JP7701364B2 - スパッタリングされたマグネシウム源を使用して窒化ガリウム材料中のマグネシウムを拡散させるための方法およびシステム - Google Patents

スパッタリングされたマグネシウム源を使用して窒化ガリウム材料中のマグネシウムを拡散させるための方法およびシステム Download PDF

Info

Publication number
JP7701364B2
JP7701364B2 JP2022548476A JP2022548476A JP7701364B2 JP 7701364 B2 JP7701364 B2 JP 7701364B2 JP 2022548476 A JP2022548476 A JP 2022548476A JP 2022548476 A JP2022548476 A JP 2022548476A JP 7701364 B2 JP7701364 B2 JP 7701364B2
Authority
JP
Japan
Prior art keywords
layer
magnesium
gallium nitride
dopant source
nitride layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022548476A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023513262A5 (https=
JP2023513262A (ja
Inventor
アクタス，オズギュル
オドノブリュードフ，ウラジミール
バセリ，セム
Original Assignee
クロミス，インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by クロミス，インコーポレイテッド filed Critical クロミス，インコーポレイテッド
Publication of JP2023513262A publication Critical patent/JP2023513262A/ja
Publication of JP2023513262A5 publication Critical patent/JP2023513262A5/ja
Application granted granted Critical
Publication of JP7701364B2 publication Critical patent/JP7701364B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
JP2022548476A 2020-02-11 2021-02-10 スパッタリングされたマグネシウム源を使用して窒化ガリウム材料中のマグネシウムを拡散させるための方法およびシステム Active JP7701364B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062975075P 2020-02-11 2020-02-11
US62/975,075 2020-02-11
PCT/US2021/017434 WO2021163175A1 (en) 2020-02-11 2021-02-10 Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources

Publications (3)

Publication Number Publication Date
JP2023513262A JP2023513262A (ja) 2023-03-30
JP2023513262A5 JP2023513262A5 (https=) 2024-02-21
JP7701364B2 true JP7701364B2 (ja) 2025-07-01

Family

ID=77177870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022548476A Active JP7701364B2 (ja) 2020-02-11 2021-02-10 スパッタリングされたマグネシウム源を使用して窒化ガリウム材料中のマグネシウムを拡散させるための方法およびシステム

Country Status (7)

Country Link
US (1) US11881404B2 (https=)
EP (1) EP4104214A4 (https=)
JP (1) JP7701364B2 (https=)
KR (1) KR102941502B1 (https=)
CN (1) CN115088079A (https=)
TW (1) TWI875952B (https=)
WO (1) WO2021163175A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12142642B2 (en) * 2018-06-20 2024-11-12 Lawrence Livermore National Security, Llc Field assisted interfacial diffusion doping through heterostructure design
US12132103B2 (en) * 2021-04-15 2024-10-29 Vanguard International Semiconductor Corporation High electron mobility transistor and fabrication method thereof
CN114373798B (zh) * 2021-12-06 2025-09-26 华南理工大学 一种增强型GaN HEMT射频器件及其制备方法
TWI822222B (zh) * 2022-08-02 2023-11-11 華邦電子股份有限公司 半導體結構及其形成方法
CN115911194A (zh) * 2022-11-23 2023-04-04 安徽长飞先进半导体有限公司 一种基于Mg扩散法的p型GaN基薄膜及其制备方法
WO2025147360A1 (en) * 2024-01-03 2025-07-10 The Board Of Trustees Of The Leland Stanford Junior University. Devices and methods involving a diffusion-dopant profile in semiconductor devices

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078332A (ja) 2006-09-20 2008-04-03 Toyota Central R&D Labs Inc ｐ型のＩＩＩ族窒化物半導体の製造方法、およびｐ型のＩＩＩ族窒化物半導体用の電極の製造方法
JP2010245465A (ja) 2009-04-10 2010-10-28 Mitsubishi Electric Corp 窒化物系半導体レーザ及びその製造方法
JP2013197305A (ja) 2012-03-19 2013-09-30 Fujitsu Ltd 化合物半導体装置及びその製造方法
US20170316933A1 (en) 2016-05-02 2017-11-02 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
JP2018010946A (ja) 2016-07-12 2018-01-18 富士電機株式会社 半導体装置の製造方法
WO2019157384A1 (en) 2018-02-12 2019-08-15 QROMIS, Inc. Method and system for forming doped regions by diffusion in gallium nitride materials
US20190393038A1 (en) 2018-06-20 2019-12-26 Lawrence Livermore National Security, Llc Gallidation assisted impurity doping

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4111719A (en) * 1976-12-06 1978-09-05 International Business Machines Corporation Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium
CA1186785A (en) * 1982-09-07 1985-05-07 Her Majesty The Queen, In Right Of Canada, As Represented By The Minister Of National Defence Electret semiconductor solar cell
JPH08306634A (ja) * 1995-05-11 1996-11-22 Oki Electric Ind Co Ltd 化合物半導体への選択固相拡散方法
US6274894B1 (en) * 1999-08-17 2001-08-14 Advanced Micro Devices, Inc. Low-bandgap source and drain formation for short-channel MOS transistors
JP4740083B2 (ja) * 2006-10-05 2011-08-03 株式会社東芝 半導体装置、およびその製造方法
JP5103979B2 (ja) * 2007-03-27 2012-12-19 豊田合成株式会社 ＩＩＩ族窒化物系化合物半導体に対する電極形成方法及びｐ型ＩＩＩ族窒化物系化合物半導体の製造方法
JP4805299B2 (ja) * 2008-03-28 2011-11-02 古河電気工業株式会社 電界効果トランジスタの製造方法
US8030188B2 (en) * 2008-12-05 2011-10-04 Electronics And Telecommunications Research Institute Methods of forming a compound semiconductor device including a diffusion region
US7977151B2 (en) * 2009-04-21 2011-07-12 Cbrite Inc. Double self-aligned metal oxide TFT
US8569158B2 (en) * 2011-03-31 2013-10-29 Tokyo Electron Limited Method for forming ultra-shallow doping regions by solid phase diffusion
US8846482B2 (en) * 2011-09-22 2014-09-30 Avogy, Inc. Method and system for diffusion and implantation in gallium nitride based devices
US20140065799A1 (en) * 2012-09-03 2014-03-06 Intermolecular, Inc. Methods and Systems for Low Resistance Contact Formation
TW201517133A (zh) 2013-10-07 2015-05-01 應用材料股份有限公司 使用熱佈植與奈秒退火致使銦鋁鎵氮化物材料系統中摻雜劑的高活化
FR3026557B1 (fr) * 2014-09-26 2018-03-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de dopage d'un semi-conducteur a base de gan
WO2016126912A1 (en) 2015-02-06 2016-08-11 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditions
US10297445B2 (en) 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
CN109716508B (zh) 2016-06-24 2023-08-15 克罗米斯有限公司 多晶陶瓷衬底及其制造方法
PL3281915T3 (pl) 2016-08-10 2019-09-30 Umicore Prekursory materiałów katody zawierających tlenek metalu przejściowego litu do baterii wielokrotnego ładowania

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078332A (ja) 2006-09-20 2008-04-03 Toyota Central R&D Labs Inc ｐ型のＩＩＩ族窒化物半導体の製造方法、およびｐ型のＩＩＩ族窒化物半導体用の電極の製造方法
JP2010245465A (ja) 2009-04-10 2010-10-28 Mitsubishi Electric Corp 窒化物系半導体レーザ及びその製造方法
JP2013197305A (ja) 2012-03-19 2013-09-30 Fujitsu Ltd 化合物半導体装置及びその製造方法
US20170316933A1 (en) 2016-05-02 2017-11-02 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
JP2018010946A (ja) 2016-07-12 2018-01-18 富士電機株式会社 半導体装置の製造方法
WO2019157384A1 (en) 2018-02-12 2019-08-15 QROMIS, Inc. Method and system for forming doped regions by diffusion in gallium nitride materials
US20190393038A1 (en) 2018-06-20 2019-12-26 Lawrence Livermore National Security, Llc Gallidation assisted impurity doping

Also Published As

Publication number Publication date
WO2021163175A1 (en) 2021-08-19
EP4104214A1 (en) 2022-12-21
US20210249269A1 (en) 2021-08-12
KR102941502B1 (ko) 2026-03-18
KR20220150908A (ko) 2022-11-11
TWI875952B (zh) 2025-03-11
EP4104214A4 (en) 2024-03-27
JP2023513262A (ja) 2023-03-30
CN115088079A (zh) 2022-09-20
TW202147406A (zh) 2021-12-16
US11881404B2 (en) 2024-01-23

Similar Documents

Publication Publication Date Title
JP7701364B2 (ja) スパッタリングされたマグネシウム源を使用して窒化ガリウム材料中のマグネシウムを拡散させるための方法およびシステム
JP7416556B2 (ja) 電力およびｒｆ用途用の設計された基板構造
CN114156181B (zh) 用于功率器件的氮化镓外延结构
CN109804456B (zh) 集成有工程化衬底的电子功率器件
US20250132152A1 (en) Engineered substrate structures for power and rf applications
JP7195265B2 (ja) 集積化クランプダイオードを有する横型高電子移動度トランジスタ
CN111919281B (zh) 通过扩散来在氮化镓材料中形成掺杂区的方法及系统
CN110291645B (zh) 用于垂直型功率器件的方法和系统
JP6804185B2 (ja) ＧａＮベースの半導体層内のドーパントの活性化を実施するための方法
JP6352073B2 (ja) ＧａＮ膜中におけるドーパント種の電気的活性化方法
CN108352324B (zh) 用于族iiia-n装置的非蚀刻性气体冷却外延堆叠
JP2017168671A (ja) 半導体装置および半導体装置の製造方法
JP6308049B2 (ja) 半導体装置の製造方法
TWI394217B (zh) 雙極性電晶體的製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240210

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240210

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20241128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241202

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20250303

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250430

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250523

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250619

R150 Certificate of patent or registration of utility model

Ref document number: 7701364

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150