JP2023149085A5 - - Google Patents
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- JP2023149085A5 JP2023149085A5 JP2022057451A JP2022057451A JP2023149085A5 JP 2023149085 A5 JP2023149085 A5 JP 2023149085A5 JP 2022057451 A JP2022057451 A JP 2022057451A JP 2022057451 A JP2022057451 A JP 2022057451A JP 2023149085 A5 JP2023149085 A5 JP 2023149085A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal oxide
- insulating layer
- forming
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022057451A JP2023149085A (ja) | 2022-03-30 | 2022-03-30 | 半導体装置の製造方法 |
| KR1020230034959A KR20230141498A (ko) | 2022-03-30 | 2023-03-17 | 반도체 장치의 제조 방법 |
| CN202310260264.XA CN116895534A (zh) | 2022-03-30 | 2023-03-17 | 半导体器件的制造方法 |
| TW112110214A TWI841307B (zh) | 2022-03-30 | 2023-03-20 | 半導體裝置之製造方法 |
| US18/127,661 US12610624B2 (en) | 2022-03-30 | 2023-03-29 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022057451A JP2023149085A (ja) | 2022-03-30 | 2022-03-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023149085A JP2023149085A (ja) | 2023-10-13 |
| JP2023149085A5 true JP2023149085A5 (https=) | 2025-04-07 |
Family
ID=88193679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022057451A Pending JP2023149085A (ja) | 2022-03-30 | 2022-03-30 | 半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12610624B2 (https=) |
| JP (1) | JP2023149085A (https=) |
| KR (1) | KR20230141498A (https=) |
| CN (1) | CN116895534A (https=) |
| TW (1) | TWI841307B (https=) |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220127372A (ko) | 2009-09-24 | 2022-09-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2012074622A (ja) | 2010-09-29 | 2012-04-12 | Bridgestone Corp | アモルファス酸化物半導体の成膜方法および薄膜トランジスタ |
| SG11201505225TA (en) | 2012-08-03 | 2015-08-28 | Semiconductor Energy Lab | Oxide semiconductor stacked film and semiconductor device |
| TWI761605B (zh) | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| JP6264090B2 (ja) * | 2013-07-31 | 2018-01-24 | 株式会社リコー | 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法 |
| US9397153B2 (en) * | 2013-09-23 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20150146409A (ko) | 2014-06-20 | 2015-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기 |
| TWI686874B (zh) * | 2014-12-26 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法 |
| WO2017137869A1 (en) | 2016-02-12 | 2017-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| JP6985812B2 (ja) * | 2016-05-04 | 2021-12-22 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
| US11069796B2 (en) * | 2018-08-09 | 2021-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
-
2022
- 2022-03-30 JP JP2022057451A patent/JP2023149085A/ja active Pending
-
2023
- 2023-03-17 CN CN202310260264.XA patent/CN116895534A/zh active Pending
- 2023-03-17 KR KR1020230034959A patent/KR20230141498A/ko active Pending
- 2023-03-20 TW TW112110214A patent/TWI841307B/zh active
- 2023-03-29 US US18/127,661 patent/US12610624B2/en active Active
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