TWI841307B - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TWI841307B
TWI841307B TW112110214A TW112110214A TWI841307B TW I841307 B TWI841307 B TW I841307B TW 112110214 A TW112110214 A TW 112110214A TW 112110214 A TW112110214 A TW 112110214A TW I841307 B TWI841307 B TW I841307B
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TW
Taiwan
Prior art keywords
layer
oxide semiconductor
oxide
insulating layer
semiconductor layer
Prior art date
Application number
TW112110214A
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English (en)
Chinese (zh)
Other versions
TW202339011A (zh
Inventor
渡壁創
津吹将志
佐佐木俊成
田丸尊也
Original Assignee
日商日本顯示器股份有限公司
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Application filed by 日商日本顯示器股份有限公司 filed Critical 日商日本顯示器股份有限公司
Publication of TW202339011A publication Critical patent/TW202339011A/zh
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Publication of TWI841307B publication Critical patent/TWI841307B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Thin Film Transistor (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
TW112110214A 2022-03-30 2023-03-20 半導體裝置之製造方法 TWI841307B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-057451 2022-03-30
JP2022057451A JP2023149085A (ja) 2022-03-30 2022-03-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW202339011A TW202339011A (zh) 2023-10-01
TWI841307B true TWI841307B (zh) 2024-05-01

Family

ID=88193679

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112110214A TWI841307B (zh) 2022-03-30 2023-03-20 半導體裝置之製造方法

Country Status (5)

Country Link
US (1) US12610624B2 (https=)
JP (1) JP2023149085A (https=)
KR (1) KR20230141498A (https=)
CN (1) CN116895534A (https=)
TW (1) TWI841307B (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150372023A1 (en) * 2014-06-20 2015-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, input/output device, and electronic device
TW201631784A (zh) * 2009-09-24 2016-09-01 半導體能源研究所股份有限公司 氧化半導體薄膜及半導體裝置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2012074622A (ja) 2010-09-29 2012-04-12 Bridgestone Corp アモルファス酸化物半導体の成膜方法および薄膜トランジスタ
SG11201505225TA (en) 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6264090B2 (ja) * 2013-07-31 2018-01-24 株式会社リコー 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法
US9397153B2 (en) * 2013-09-23 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI686874B (zh) * 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
WO2017137869A1 (en) 2016-02-12 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6985812B2 (ja) * 2016-05-04 2021-12-22 株式会社半導体エネルギー研究所 トランジスタの作製方法
US11069796B2 (en) * 2018-08-09 2021-07-20 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201631784A (zh) * 2009-09-24 2016-09-01 半導體能源研究所股份有限公司 氧化半導體薄膜及半導體裝置
US20150372023A1 (en) * 2014-06-20 2015-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, input/output device, and electronic device

Also Published As

Publication number Publication date
CN116895534A (zh) 2023-10-17
TW202339011A (zh) 2023-10-01
JP2023149085A (ja) 2023-10-13
US20230317833A1 (en) 2023-10-05
US12610624B2 (en) 2026-04-21
KR20230141498A (ko) 2023-10-10

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