JP2023149085A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2023149085A
JP2023149085A JP2022057451A JP2022057451A JP2023149085A JP 2023149085 A JP2023149085 A JP 2023149085A JP 2022057451 A JP2022057451 A JP 2022057451A JP 2022057451 A JP2022057451 A JP 2022057451A JP 2023149085 A JP2023149085 A JP 2023149085A
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JP
Japan
Prior art keywords
layer
oxide semiconductor
insulating layer
semiconductor layer
semiconductor device
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Pending
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JP2022057451A
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English (en)
Japanese (ja)
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JP2023149085A5 (https=
Inventor
創 渡壁
So Watakabe
将志 津吹
Masashi Tsubuki
俊成 佐々木
Toshinari Sasaki
尊也 田丸
Takaya Tamaru
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Japan Display Inc
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Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2022057451A priority Critical patent/JP2023149085A/ja
Priority to KR1020230034959A priority patent/KR20230141498A/ko
Priority to CN202310260264.XA priority patent/CN116895534A/zh
Priority to TW112110214A priority patent/TWI841307B/zh
Priority to US18/127,661 priority patent/US12610624B2/en
Publication of JP2023149085A publication Critical patent/JP2023149085A/ja
Publication of JP2023149085A5 publication Critical patent/JP2023149085A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

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  • Thin Film Transistor (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2022057451A 2022-03-30 2022-03-30 半導体装置の製造方法 Pending JP2023149085A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022057451A JP2023149085A (ja) 2022-03-30 2022-03-30 半導体装置の製造方法
KR1020230034959A KR20230141498A (ko) 2022-03-30 2023-03-17 반도체 장치의 제조 방법
CN202310260264.XA CN116895534A (zh) 2022-03-30 2023-03-17 半导体器件的制造方法
TW112110214A TWI841307B (zh) 2022-03-30 2023-03-20 半導體裝置之製造方法
US18/127,661 US12610624B2 (en) 2022-03-30 2023-03-29 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022057451A JP2023149085A (ja) 2022-03-30 2022-03-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2023149085A true JP2023149085A (ja) 2023-10-13
JP2023149085A5 JP2023149085A5 (https=) 2025-04-07

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ID=88193679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022057451A Pending JP2023149085A (ja) 2022-03-30 2022-03-30 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US12610624B2 (https=)
JP (1) JP2023149085A (https=)
KR (1) KR20230141498A (https=)
CN (1) CN116895534A (https=)
TW (1) TWI841307B (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015046568A (ja) * 2013-07-31 2015-03-12 株式会社リコー 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法
JP2015084414A (ja) * 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP2017204637A (ja) * 2016-05-04 2017-11-16 株式会社半導体エネルギー研究所 トランジスタおよびその作製方法
JP2020027942A (ja) * 2018-08-09 2020-02-20 株式会社半導体エネルギー研究所 半導体装置の作製方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220127372A (ko) 2009-09-24 2022-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2012074622A (ja) 2010-09-29 2012-04-12 Bridgestone Corp アモルファス酸化物半導体の成膜方法および薄膜トランジスタ
SG11201505225TA (en) 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150146409A (ko) 2014-06-20 2015-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기
TWI686874B (zh) * 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
WO2017137869A1 (en) 2016-02-12 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015046568A (ja) * 2013-07-31 2015-03-12 株式会社リコー 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法
JP2015084414A (ja) * 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP2017204637A (ja) * 2016-05-04 2017-11-16 株式会社半導体エネルギー研究所 トランジスタおよびその作製方法
JP2020027942A (ja) * 2018-08-09 2020-02-20 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
CN116895534A (zh) 2023-10-17
TW202339011A (zh) 2023-10-01
US20230317833A1 (en) 2023-10-05
US12610624B2 (en) 2026-04-21
KR20230141498A (ko) 2023-10-10
TWI841307B (zh) 2024-05-01

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