JP2023149086A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2023149086A5 JP2023149086A5 JP2022057454A JP2022057454A JP2023149086A5 JP 2023149086 A5 JP2023149086 A5 JP 2023149086A5 JP 2022057454 A JP2022057454 A JP 2022057454A JP 2022057454 A JP2022057454 A JP 2022057454A JP 2023149086 A5 JP2023149086 A5 JP 2023149086A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal oxide
- manufacturing
- forming
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022057454A JP2023149086A (ja) | 2022-03-30 | 2022-03-30 | 半導体装置の製造方法 |
| KR1020230033886A KR102874155B1 (ko) | 2022-03-30 | 2023-03-15 | 반도체 장치의 제조 방법 |
| CN202310259938.4A CN116895533A (zh) | 2022-03-30 | 2023-03-17 | 半导体器件的制造方法 |
| TW112110213A TWI877586B (zh) | 2022-03-30 | 2023-03-20 | 半導體裝置之製造方法 |
| US18/127,679 US12598816B2 (en) | 2022-03-30 | 2023-03-29 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022057454A JP2023149086A (ja) | 2022-03-30 | 2022-03-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023149086A JP2023149086A (ja) | 2023-10-13 |
| JP2023149086A5 true JP2023149086A5 (https=) | 2025-04-07 |
Family
ID=88193741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022057454A Pending JP2023149086A (ja) | 2022-03-30 | 2022-03-30 | 半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12598816B2 (https=) |
| JP (1) | JP2023149086A (https=) |
| KR (1) | KR102874155B1 (https=) |
| CN (1) | CN116895533A (https=) |
| TW (1) | TWI877586B (https=) |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102066532B1 (ko) * | 2009-11-06 | 2020-01-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2012074622A (ja) * | 2010-09-29 | 2012-04-12 | Bridgestone Corp | アモルファス酸化物半導体の成膜方法および薄膜トランジスタ |
| US9082860B2 (en) * | 2011-03-31 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| EP2880690B1 (en) | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| TWI761605B (zh) | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| US10304859B2 (en) * | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
| US9006736B2 (en) | 2013-07-12 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6264090B2 (ja) * | 2013-07-31 | 2018-01-24 | 株式会社リコー | 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法 |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20150146409A (ko) * | 2014-06-20 | 2015-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기 |
| US10032888B2 (en) * | 2014-08-22 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device |
| CN109121438B (zh) | 2016-02-12 | 2022-02-18 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| KR102424445B1 (ko) * | 2016-05-03 | 2022-07-22 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| TW201836020A (zh) * | 2017-02-17 | 2018-10-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| WO2019087002A1 (ja) * | 2017-11-02 | 2019-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP7344869B2 (ja) * | 2018-06-29 | 2023-09-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US11997846B2 (en) | 2018-07-06 | 2024-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US11069796B2 (en) | 2018-08-09 | 2021-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| KR102763305B1 (ko) * | 2019-11-26 | 2025-02-05 | 삼성디스플레이 주식회사 | 표시 장치 |
| US11710775B2 (en) * | 2020-05-29 | 2023-07-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ferroelectric field effect transistor |
-
2022
- 2022-03-30 JP JP2022057454A patent/JP2023149086A/ja active Pending
-
2023
- 2023-03-15 KR KR1020230033886A patent/KR102874155B1/ko active Active
- 2023-03-17 CN CN202310259938.4A patent/CN116895533A/zh active Pending
- 2023-03-20 TW TW112110213A patent/TWI877586B/zh active
- 2023-03-29 US US18/127,679 patent/US12598816B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2025118859A5 (https=) | ||
| JPH10189966A5 (https=) | ||
| JP2006173432A5 (https=) | ||
| CN104157695B (zh) | 薄膜晶体管及其制备方法、阵列基板和显示装置 | |
| JP2011091279A5 (https=) | ||
| JP2004056153A5 (https=) | ||
| JP2003229575A5 (https=) | ||
| JP2008177606A5 (https=) | ||
| JP2010204656A5 (https=) | ||
| WO2018090482A1 (zh) | 阵列基板及其制备方法、显示装置 | |
| WO2017215109A1 (zh) | 双栅电极氧化物薄膜晶体管及其制备方法 | |
| WO2018176766A1 (zh) | 显示基板的制备方法、阵列基板及显示装置 | |
| CN106601689B (zh) | 主动开关阵列基板及其制备方法 | |
| ATE515791T1 (de) | Herstellungsverfahren für eine halbleitervorrichtung | |
| JP2007510308A5 (https=) | ||
| JP2005109389A5 (https=) | ||
| TW201351479A (zh) | 硬遮罩間隙壁結構及其製作方法 | |
| JPWO2022153143A5 (ja) | 表示装置の作製方法 | |
| JP2023149086A5 (https=) | ||
| JP2005190992A5 (https=) | ||
| CN103123912A (zh) | 一种顶栅tft阵列基板制造方法 | |
| CN105304653B (zh) | 像素结构、阵列基板、液晶显示面板及像素结构制造方法 | |
| JP2023149085A5 (https=) | ||
| CN108493197B (zh) | 顶栅型阵列基板制备工艺 | |
| CN107895713B (zh) | Tft基板制作方法 |