JP2025118859A5 - - Google Patents

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Publication number
JP2025118859A5
JP2025118859A5 JP2025081136A JP2025081136A JP2025118859A5 JP 2025118859 A5 JP2025118859 A5 JP 2025118859A5 JP 2025081136 A JP2025081136 A JP 2025081136A JP 2025081136 A JP2025081136 A JP 2025081136A JP 2025118859 A5 JP2025118859 A5 JP 2025118859A5
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JP
Japan
Prior art keywords
layer
forming
insulating layer
oxide
metal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025081136A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025118859A (ja
Filing date
Publication date
Priority claimed from JP2019144689A external-priority patent/JP7344707B2/ja
Application filed filed Critical
Publication of JP2025118859A publication Critical patent/JP2025118859A/ja
Publication of JP2025118859A5 publication Critical patent/JP2025118859A5/ja
Pending legal-status Critical Current

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JP2025081136A 2018-08-09 2025-05-14 半導体装置の作製方法 Pending JP2025118859A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018149954 2018-08-09
JP2018149954 2018-08-09
JP2019144689A JP7344707B2 (ja) 2018-08-09 2019-08-06 半導体装置の作製方法
JP2023143832A JP7682962B2 (ja) 2018-08-09 2023-09-05 半導体装置の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2023143832A Division JP7682962B2 (ja) 2018-08-09 2023-09-05 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2025118859A JP2025118859A (ja) 2025-08-13
JP2025118859A5 true JP2025118859A5 (https=) 2025-09-09

Family

ID=69407116

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2019144689A Active JP7344707B2 (ja) 2018-08-09 2019-08-06 半導体装置の作製方法
JP2023143832A Active JP7682962B2 (ja) 2018-08-09 2023-09-05 半導体装置の作製方法
JP2025081136A Pending JP2025118859A (ja) 2018-08-09 2025-05-14 半導体装置の作製方法

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP2019144689A Active JP7344707B2 (ja) 2018-08-09 2019-08-06 半導体装置の作製方法
JP2023143832A Active JP7682962B2 (ja) 2018-08-09 2023-09-05 半導体装置の作製方法

Country Status (3)

Country Link
US (1) US11069796B2 (https=)
JP (3) JP7344707B2 (https=)
KR (1) KR20200018281A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102914910B1 (ko) 2018-10-26 2026-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물의 제작 방법, 반도체 장치의 제작 방법
US11398437B2 (en) * 2019-12-13 2022-07-26 Semiconductor Components Industries, Llc Power device including metal layer
CN112002706B (zh) * 2020-08-10 2022-09-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
JP2023149086A (ja) 2022-03-30 2023-10-13 株式会社ジャパンディスプレイ 半導体装置の製造方法
CN118872076A (zh) * 2022-03-30 2024-10-29 株式会社日本显示器 半导体装置及半导体装置的制造方法
JP2023149085A (ja) 2022-03-30 2023-10-13 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP7464863B2 (ja) * 2022-05-31 2024-04-10 日新電機株式会社 固定電荷制御方法、薄膜トランジスタの製造方法及び薄膜トランジスタ
JP7382608B1 (ja) * 2022-05-31 2023-11-17 国立大学法人東京農工大学 固定電荷発現方法、薄膜トランジスタの製造方法及び薄膜トランジスタ
JP2025091771A (ja) * 2023-12-07 2025-06-19 日新電機株式会社 薄膜トランジスタの製造方法

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TWI666776B (zh) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
JP6676316B2 (ja) 2014-09-12 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
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