JP2024054899A5 - - Google Patents
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- Publication number
- JP2024054899A5 JP2024054899A5 JP2022161345A JP2022161345A JP2024054899A5 JP 2024054899 A5 JP2024054899 A5 JP 2024054899A5 JP 2022161345 A JP2022161345 A JP 2022161345A JP 2022161345 A JP2022161345 A JP 2022161345A JP 2024054899 A5 JP2024054899 A5 JP 2024054899A5
- Authority
- JP
- Japan
- Prior art keywords
- trench
- ion implantation
- semiconductor substrate
- forming
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 72
- 238000005468 ion implantation Methods 0.000 claims 59
- 239000000758 substrate Substances 0.000 claims 53
- 239000012535 impurity Substances 0.000 claims 38
- 239000010410 layer Substances 0.000 claims 35
- 238000004519 manufacturing process Methods 0.000 claims 19
- 238000010438 heat treatment Methods 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- 239000011229 interlayer Substances 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 230000003647 oxidation Effects 0.000 claims 4
- 238000007254 oxidation reaction Methods 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022161345A JP2024054899A (ja) | 2022-10-06 | 2022-10-06 | 半導体装置の製造方法 |
| US18/449,763 US20240120406A1 (en) | 2022-10-06 | 2023-08-15 | Method of manufacturing semiconductor device |
| CN202311190972.7A CN117855032A (zh) | 2022-10-06 | 2023-09-15 | 制造半导体器件的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022161345A JP2024054899A (ja) | 2022-10-06 | 2022-10-06 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024054899A JP2024054899A (ja) | 2024-04-18 |
| JP2024054899A5 true JP2024054899A5 (https=) | 2025-03-17 |
Family
ID=90529244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022161345A Pending JP2024054899A (ja) | 2022-10-06 | 2022-10-06 | 半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20240120406A1 (https=) |
| JP (1) | JP2024054899A (https=) |
| CN (1) | CN117855032A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021023320A (ja) * | 2019-07-31 | 2021-02-22 | 株式会社三洋物産 | 遊技機 |
| JP2021023319A (ja) * | 2019-07-31 | 2021-02-22 | 株式会社三洋物産 | 遊技機 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4788734B2 (ja) * | 2008-05-09 | 2011-10-05 | トヨタ自動車株式会社 | 半導体装置 |
| JP2012256628A (ja) * | 2011-06-07 | 2012-12-27 | Renesas Electronics Corp | Ｉｇｂｔおよびダイオード |
| JP5973730B2 (ja) * | 2012-01-05 | 2016-08-23 | ルネサスエレクトロニクス株式会社 | Ｉｅ型トレンチゲートｉｇｂｔ |
| JP2014053409A (ja) * | 2012-09-06 | 2014-03-20 | Fuji Electric Co Ltd | Ｍｏｓ型半導体装置 |
| CN105531827B (zh) * | 2014-03-19 | 2019-04-02 | 富士电机株式会社 | 半导体装置 |
| JP6420175B2 (ja) * | 2014-05-22 | 2018-11-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP7000240B2 (ja) * | 2018-04-18 | 2022-01-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP7051641B2 (ja) * | 2018-08-24 | 2022-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP7279393B2 (ja) * | 2019-02-15 | 2023-05-23 | 富士電機株式会社 | 半導体集積回路の製造方法 |
-
2022
- 2022-10-06 JP JP2022161345A patent/JP2024054899A/ja active Pending
-
2023
- 2023-08-15 US US18/449,763 patent/US20240120406A1/en active Pending
- 2023-09-15 CN CN202311190972.7A patent/CN117855032A/zh active Pending
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