JP2024054899A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2024054899A
JP2024054899A JP2022161345A JP2022161345A JP2024054899A JP 2024054899 A JP2024054899 A JP 2024054899A JP 2022161345 A JP2022161345 A JP 2022161345A JP 2022161345 A JP2022161345 A JP 2022161345A JP 2024054899 A JP2024054899 A JP 2024054899A
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JP
Japan
Prior art keywords
trench
semiconductor substrate
ion implantation
insulating film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022161345A
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English (en)
Japanese (ja)
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JP2024054899A5 (https=
Inventor
直 山口
Sunao Yamaguchi
祥輝 丸山
Yoshiteru Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2022161345A priority Critical patent/JP2024054899A/ja
Priority to US18/449,763 priority patent/US20240120406A1/en
Priority to CN202311190972.7A priority patent/CN117855032A/zh
Publication of JP2024054899A publication Critical patent/JP2024054899A/ja
Publication of JP2024054899A5 publication Critical patent/JP2024054899A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H10P32/1406—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022161345A 2022-10-06 2022-10-06 半導体装置の製造方法 Pending JP2024054899A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2022161345A JP2024054899A (ja) 2022-10-06 2022-10-06 半導体装置の製造方法
US18/449,763 US20240120406A1 (en) 2022-10-06 2023-08-15 Method of manufacturing semiconductor device
CN202311190972.7A CN117855032A (zh) 2022-10-06 2023-09-15 制造半导体器件的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022161345A JP2024054899A (ja) 2022-10-06 2022-10-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2024054899A true JP2024054899A (ja) 2024-04-18
JP2024054899A5 JP2024054899A5 (https=) 2025-03-17

Family

ID=90529244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022161345A Pending JP2024054899A (ja) 2022-10-06 2022-10-06 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US20240120406A1 (https=)
JP (1) JP2024054899A (https=)
CN (1) CN117855032A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024032765A (ja) * 2019-07-31 2024-03-12 株式会社三洋物産 遊技機
JP2024032766A (ja) * 2019-07-31 2024-03-12 株式会社三洋物産 遊技機

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272550A (ja) * 2008-05-09 2009-11-19 Toyota Motor Corp 半導体装置
JP2014053409A (ja) * 2012-09-06 2014-03-20 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
WO2015141327A1 (ja) * 2014-03-19 2015-09-24 富士電機株式会社 半導体装置
JP2020031167A (ja) * 2018-08-24 2020-02-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2020136402A (ja) * 2019-02-15 2020-08-31 富士電機株式会社 半導体集積回路の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012256628A (ja) * 2011-06-07 2012-12-27 Renesas Electronics Corp Ｉｇｂｔおよびダイオード
JP5973730B2 (ja) * 2012-01-05 2016-08-23 ルネサスエレクトロニクス株式会社 Ｉｅ型トレンチゲートｉｇｂｔ
JP6420175B2 (ja) * 2014-05-22 2018-11-07 ルネサスエレクトロニクス株式会社 半導体装置
JP7000240B2 (ja) * 2018-04-18 2022-01-19 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272550A (ja) * 2008-05-09 2009-11-19 Toyota Motor Corp 半導体装置
JP2014053409A (ja) * 2012-09-06 2014-03-20 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
WO2015141327A1 (ja) * 2014-03-19 2015-09-24 富士電機株式会社 半導体装置
JP2020031167A (ja) * 2018-08-24 2020-02-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2020136402A (ja) * 2019-02-15 2020-08-31 富士電機株式会社 半導体集積回路の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024032765A (ja) * 2019-07-31 2024-03-12 株式会社三洋物産 遊技機
JP2024032766A (ja) * 2019-07-31 2024-03-12 株式会社三洋物産 遊技機

Also Published As

Publication number Publication date
US20240120406A1 (en) 2024-04-11
CN117855032A (zh) 2024-04-09

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