JPWO2022101969A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2022101969A5 JPWO2022101969A5 JP2022527240A JP2022527240A JPWO2022101969A5 JP WO2022101969 A5 JPWO2022101969 A5 JP WO2022101969A5 JP 2022527240 A JP2022527240 A JP 2022527240A JP 2022527240 A JP2022527240 A JP 2022527240A JP WO2022101969 A5 JPWO2022101969 A5 JP WO2022101969A5
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- layer
- junction photoelectric
- insulating film
- tunnel insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/041884 WO2022101969A1 (ja) | 2020-11-10 | 2020-11-10 | 多層接合型光電変換素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022101969A1 JPWO2022101969A1 (https=) | 2022-05-19 |
| JPWO2022101969A5 true JPWO2022101969A5 (https=) | 2022-10-24 |
Family
ID=81600919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022527240A Pending JPWO2022101969A1 (https=) | 2020-11-10 | 2020-11-10 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230345743A1 (https=) |
| JP (1) | JPWO2022101969A1 (https=) |
| CN (1) | CN116784015A (https=) |
| DE (1) | DE112020007791T5 (https=) |
| WO (1) | WO2022101969A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7114821B1 (ja) | 2022-03-18 | 2022-08-08 | 株式会社東芝 | 多層接合型光電変換素子及び多層接合型光電変換素子の製造方法 |
| CN118053924A (zh) * | 2024-02-06 | 2024-05-17 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、叠层电池和光伏组件 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3358637A4 (en) * | 2015-09-30 | 2019-06-19 | Kaneka Corporation | PHOTOELECTRIC CONVERSION DEVICE WITH SEVERAL TRANSITIONS AND PHOTOELECTRIC CONVERSION MODULE |
| NL2015987B1 (en) * | 2015-12-18 | 2017-07-10 | Stichting Energieonderzoek Centrum Nederland | Tandem solar cell and method for manufacturing such a solar cell. |
| KR20180007585A (ko) * | 2016-07-13 | 2018-01-23 | 엘지전자 주식회사 | 텐덤 태양전지, 이를 포함하는 텐덤 태양전지 모듈 및 이의 제조방법 |
| US11296244B2 (en) * | 2016-09-20 | 2022-04-05 | The Board Of Trustees Of The Leland Stanford Junior University | Solar cell comprising a metal-oxide buffer layer and method of fabrication |
| CN111081878A (zh) * | 2018-10-19 | 2020-04-28 | 君泰创新(北京)科技有限公司 | 一种钙钛矿/硅基异质结叠层太阳能电池及其制备方法 |
-
2020
- 2020-11-10 JP JP2022527240A patent/JPWO2022101969A1/ja active Pending
- 2020-11-10 CN CN202080108319.XA patent/CN116784015A/zh active Pending
- 2020-11-10 DE DE112020007791.8T patent/DE112020007791T5/de not_active Ceased
- 2020-11-10 WO PCT/JP2020/041884 patent/WO2022101969A1/ja not_active Ceased
-
2023
- 2023-05-09 US US18/314,412 patent/US20230345743A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2007311584A5 (https=) | ||
| CN110459464B (zh) | 一种厚膜氮化硅的区域挖槽制备方法 | |
| TWI567999B (zh) | 薄膜電晶體陣列襯底結構及其製造方法 | |
| CN101419092B (zh) | 平面化热绝缘结构的热释电红外探测器的制备方法 | |
| JPWO2022101969A5 (https=) | ||
| JP2004079606A5 (https=) | ||
| TWI662330B (zh) | 主動元件基板及其製法 | |
| JP2001210724A5 (https=) | ||
| CN103681899B (zh) | 提高感光密度的光敏器件及其制造方法 | |
| TW201546983A (zh) | 半導體裝置及其製造方法 | |
| JPWO2022080196A5 (https=) | ||
| CN103413839A (zh) | 一种具有双层钝化膜的AlGaN基紫外探测器及制备方法 | |
| JP6662250B2 (ja) | シリコンエピタキシャルウェーハの製造方法及び半導体デバイスの製造方法 | |
| TW201340255A (zh) | 存儲裝置及製造存儲裝置的方法 | |
| CN106531649A (zh) | 一种提高晶圆键合程度的方法 | |
| CN102299064B (zh) | 栅结构氧化的方法 | |
| TW502375B (en) | Manufacturing method of semiconductor device having different size of gate spacer | |
| KR100567889B1 (ko) | 플래시 메모리 소자의 제조 방법 | |
| CN110379710A (zh) | 金属栅极的制造方法及半导体器件 | |
| JPH11145425A (ja) | 半導体素子の製造方法及び半導体装置 | |
| JPS5984570A (ja) | 半導体装置用キヤパシタの製造方法 | |
| JPH0528501B2 (https=) | ||
| JP2024048269A5 (https=) | ||
| CN119008795A (zh) | 一种Micro-LED芯片及其制备方法 | |
| JPWO2024154358A5 (https=) |