DE112020007791T5 - Mehrschichtübergang-Fotoelektrokonvertierungselement und Verfahren zur Herstellung desselben - Google Patents

Mehrschichtübergang-Fotoelektrokonvertierungselement und Verfahren zur Herstellung desselben Download PDF

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Publication number
DE112020007791T5
DE112020007791T5 DE112020007791.8T DE112020007791T DE112020007791T5 DE 112020007791 T5 DE112020007791 T5 DE 112020007791T5 DE 112020007791 T DE112020007791 T DE 112020007791T DE 112020007791 T5 DE112020007791 T5 DE 112020007791T5
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DE
Germany
Prior art keywords
layer
electrode
silicon
photoelectroconversion
photoactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112020007791.8T
Other languages
German (de)
English (en)
Inventor
Takeshi Gotanda
Tomohiro Tobari
Yutaka Saita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Energy Systems and Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Energy Systems and Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Energy Systems and Solutions Corp filed Critical Toshiba Corp
Publication of DE112020007791T5 publication Critical patent/DE112020007791T5/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
DE112020007791.8T 2020-11-10 2020-11-10 Mehrschichtübergang-Fotoelektrokonvertierungselement und Verfahren zur Herstellung desselben Ceased DE112020007791T5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/041884 WO2022101969A1 (ja) 2020-11-10 2020-11-10 多層接合型光電変換素子およびその製造方法

Publications (1)

Publication Number Publication Date
DE112020007791T5 true DE112020007791T5 (de) 2023-09-28

Family

ID=81600919

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112020007791.8T Ceased DE112020007791T5 (de) 2020-11-10 2020-11-10 Mehrschichtübergang-Fotoelektrokonvertierungselement und Verfahren zur Herstellung desselben

Country Status (5)

Country Link
US (1) US20230345743A1 (https=)
JP (1) JPWO2022101969A1 (https=)
CN (1) CN116784015A (https=)
DE (1) DE112020007791T5 (https=)
WO (1) WO2022101969A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114821B1 (ja) 2022-03-18 2022-08-08 株式会社東芝 多層接合型光電変換素子及び多層接合型光電変換素子の製造方法
CN118053924A (zh) * 2024-02-06 2024-05-17 浙江晶科能源有限公司 太阳能电池及其制备方法、叠层电池和光伏组件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3358637A4 (en) * 2015-09-30 2019-06-19 Kaneka Corporation PHOTOELECTRIC CONVERSION DEVICE WITH SEVERAL TRANSITIONS AND PHOTOELECTRIC CONVERSION MODULE
NL2015987B1 (en) * 2015-12-18 2017-07-10 Stichting Energieonderzoek Centrum Nederland Tandem solar cell and method for manufacturing such a solar cell.
KR20180007585A (ko) * 2016-07-13 2018-01-23 엘지전자 주식회사 텐덤 태양전지, 이를 포함하는 텐덤 태양전지 모듈 및 이의 제조방법
US11296244B2 (en) * 2016-09-20 2022-04-05 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising a metal-oxide buffer layer and method of fabrication
CN111081878A (zh) * 2018-10-19 2020-04-28 君泰创新（北京）科技有限公司 一种钙钛矿/硅基异质结叠层太阳能电池及其制备方法

Also Published As

Publication number Publication date
WO2022101969A1 (ja) 2022-05-19
US20230345743A1 (en) 2023-10-26
CN116784015A (zh) 2023-09-19
JPWO2022101969A1 (https=) 2022-05-19

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