JP2001210724A5 - - Google Patents
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- Publication number
- JP2001210724A5 JP2001210724A5 JP2000341257A JP2000341257A JP2001210724A5 JP 2001210724 A5 JP2001210724 A5 JP 2001210724A5 JP 2000341257 A JP2000341257 A JP 2000341257A JP 2000341257 A JP2000341257 A JP 2000341257A JP 2001210724 A5 JP2001210724 A5 JP 2001210724A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon nitride
- silicon
- silicon oxide
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims 23
- 229920002120 photoresistant polymer Polymers 0.000 claims 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 8
- 239000010703 silicon Substances 0.000 claims 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 claims 5
- 238000002955 isolation Methods 0.000 claims 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 229910021529 ammonia Inorganic materials 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 239000000460 chlorine Substances 0.000 claims 3
- 229910052801 chlorine Inorganic materials 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000341257A JP2001210724A (ja) | 1999-11-15 | 2000-11-09 | 半導体装置の製造方法及び半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32429599 | 1999-11-15 | ||
| JP11-324295 | 1999-11-15 | ||
| JP2000341257A JP2001210724A (ja) | 1999-11-15 | 2000-11-09 | 半導体装置の製造方法及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001210724A JP2001210724A (ja) | 2001-08-03 |
| JP2001210724A5 true JP2001210724A5 (https=) | 2005-03-17 |
Family
ID=18164217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000341257A Withdrawn JP2001210724A (ja) | 1999-11-15 | 2000-11-09 | 半導体装置の製造方法及び半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6417052B1 (https=) |
| JP (1) | JP2001210724A (https=) |
| KR (1) | KR100659632B1 (https=) |
| TW (1) | TW495887B (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW580736B (en) * | 2000-04-27 | 2004-03-21 | Hitachi Ltd | Fabrication method for semiconductor device |
| JP2003152102A (ja) * | 2001-11-15 | 2003-05-23 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP2003221257A (ja) * | 2002-01-31 | 2003-08-05 | Nippon Sheet Glass Co Ltd | 透明薄膜の成形方法およびそれを備える透明基体 |
| DE10238798B3 (de) * | 2002-08-23 | 2004-03-18 | Infineon Technologies Ag | Hochfrequenzschalter |
| JP2004134687A (ja) * | 2002-10-15 | 2004-04-30 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2006332400A (ja) * | 2005-05-27 | 2006-12-07 | Nec Corp | 薄膜半導体装置およびその製造方法 |
| KR100816753B1 (ko) * | 2006-10-09 | 2008-03-25 | 삼성전자주식회사 | 반도체 소자의 형성방법 |
| JP4852400B2 (ja) * | 2006-11-27 | 2012-01-11 | シャープ株式会社 | 半導体記憶装置及び半導体装置並びに表示装置、液晶表示装置及び受像機 |
| JP2008258349A (ja) * | 2007-04-04 | 2008-10-23 | Nec Electronics Corp | 半導体装置の製造方法 |
| JP2010080966A (ja) * | 2009-09-30 | 2010-04-08 | Fujitsu Microelectronics Ltd | 半導体装置 |
| US20130237046A1 (en) * | 2012-03-09 | 2013-09-12 | Chien-Ting Lin | Semiconductor process |
| US9190272B1 (en) * | 2014-07-15 | 2015-11-17 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
| US10535527B2 (en) * | 2017-07-13 | 2020-01-14 | Applied Materials, Inc. | Methods for depositing semiconductor films |
| US11968828B2 (en) * | 2019-07-09 | 2024-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming a semiconductor device with a dual gate dielectric layer having middle portion thinner than the edge portions |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63289820A (ja) * | 1987-05-21 | 1988-11-28 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| US5927992A (en) * | 1993-12-22 | 1999-07-27 | Stmicroelectronics, Inc. | Method of forming a dielectric in an integrated circuit |
| JPH08130250A (ja) * | 1994-09-05 | 1996-05-21 | Fuji Electric Co Ltd | Ｍｏｓ型集積回路装置の製造方法 |
| US6033943A (en) * | 1996-08-23 | 2000-03-07 | Advanced Micro Devices, Inc. | Dual gate oxide thickness integrated circuit and process for making same |
| US6191463B1 (en) * | 1997-07-15 | 2001-02-20 | Kabushiki Kaisha Toshiba | Apparatus and method of improving an insulating film on a semiconductor device |
| JPH11204787A (ja) * | 1998-01-14 | 1999-07-30 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
-
2000
- 2000-10-26 TW TW089122585A patent/TW495887B/zh not_active IP Right Cessation
- 2000-11-09 JP JP2000341257A patent/JP2001210724A/ja not_active Withdrawn
- 2000-11-14 KR KR1020000067361A patent/KR100659632B1/ko not_active Expired - Fee Related
- 2000-11-15 US US09/712,243 patent/US6417052B1/en not_active Expired - Fee Related
-
2001
- 2001-03-19 US US09/810,666 patent/US20010019158A1/en not_active Abandoned
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