KR100659632B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR100659632B1
KR100659632B1 KR1020000067361A KR20000067361A KR100659632B1 KR 100659632 B1 KR100659632 B1 KR 100659632B1 KR 1020000067361 A KR1020000067361 A KR 1020000067361A KR 20000067361 A KR20000067361 A KR 20000067361A KR 100659632 B1 KR100659632 B1 KR 100659632B1
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KR
South Korea
Prior art keywords
film
silicon oxide
silicon
silicon nitride
oxide film
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Expired - Fee Related
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KR1020000067361A
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English (en)
Korean (ko)
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KR20010051667A (ko
Inventor
쯔지까와심페이
우시야마마사히로
미네도시유끼
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20010051667A publication Critical patent/KR20010051667A/ko
Application granted granted Critical
Publication of KR100659632B1 publication Critical patent/KR100659632B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020000067361A 1999-11-15 2000-11-14 반도체 장치의 제조 방법 Expired - Fee Related KR100659632B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32429599 1999-11-15
JP1999-324295 1999-11-15

Publications (2)

Publication Number Publication Date
KR20010051667A KR20010051667A (ko) 2001-06-25
KR100659632B1 true KR100659632B1 (ko) 2006-12-20

Family

ID=18164217

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000067361A Expired - Fee Related KR100659632B1 (ko) 1999-11-15 2000-11-14 반도체 장치의 제조 방법

Country Status (4)

Country Link
US (2) US6417052B1 (https=)
JP (1) JP2001210724A (https=)
KR (1) KR100659632B1 (https=)
TW (1) TW495887B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW580736B (en) * 2000-04-27 2004-03-21 Hitachi Ltd Fabrication method for semiconductor device
JP2003152102A (ja) * 2001-11-15 2003-05-23 Hitachi Ltd 半導体集積回路装置の製造方法
JP2003221257A (ja) * 2002-01-31 2003-08-05 Nippon Sheet Glass Co Ltd 透明薄膜の成形方法およびそれを備える透明基体
DE10238798B3 (de) * 2002-08-23 2004-03-18 Infineon Technologies Ag Hochfrequenzschalter
JP2004134687A (ja) * 2002-10-15 2004-04-30 Toshiba Corp 半導体装置及びその製造方法
JP2006332400A (ja) * 2005-05-27 2006-12-07 Nec Corp 薄膜半導体装置およびその製造方法
KR100816753B1 (ko) * 2006-10-09 2008-03-25 삼성전자주식회사 반도체 소자의 형성방법
JP4852400B2 (ja) * 2006-11-27 2012-01-11 シャープ株式会社 半導体記憶装置及び半導体装置並びに表示装置、液晶表示装置及び受像機
JP2008258349A (ja) * 2007-04-04 2008-10-23 Nec Electronics Corp 半導体装置の製造方法
JP2010080966A (ja) * 2009-09-30 2010-04-08 Fujitsu Microelectronics Ltd 半導体装置
US20130237046A1 (en) * 2012-03-09 2013-09-12 Chien-Ting Lin Semiconductor process
US9190272B1 (en) * 2014-07-15 2015-11-17 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US10535527B2 (en) * 2017-07-13 2020-01-14 Applied Materials, Inc. Methods for depositing semiconductor films
US11968828B2 (en) * 2019-07-09 2024-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a semiconductor device with a dual gate dielectric layer having middle portion thinner than the edge portions

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289820A (ja) * 1987-05-21 1988-11-28 Matsushita Electronics Corp 半導体装置の製造方法
US5927992A (en) * 1993-12-22 1999-07-27 Stmicroelectronics, Inc. Method of forming a dielectric in an integrated circuit
JPH08130250A (ja) * 1994-09-05 1996-05-21 Fuji Electric Co Ltd Ｍｏｓ型集積回路装置の製造方法
US6033943A (en) * 1996-08-23 2000-03-07 Advanced Micro Devices, Inc. Dual gate oxide thickness integrated circuit and process for making same
US6191463B1 (en) * 1997-07-15 2001-02-20 Kabushiki Kaisha Toshiba Apparatus and method of improving an insulating film on a semiconductor device
JPH11204787A (ja) * 1998-01-14 1999-07-30 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20010019158A1 (en) 2001-09-06
US6417052B1 (en) 2002-07-09
TW495887B (en) 2002-07-21
KR20010051667A (ko) 2001-06-25
JP2001210724A (ja) 2001-08-03

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