TW495887B - Semiconductor device and manufacturing method of the same - Google Patents

Semiconductor device and manufacturing method of the same Download PDF

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Publication number
TW495887B
TW495887B TW089122585A TW89122585A TW495887B TW 495887 B TW495887 B TW 495887B TW 089122585 A TW089122585 A TW 089122585A TW 89122585 A TW89122585 A TW 89122585A TW 495887 B TW495887 B TW 495887B
Authority
TW
Taiwan
Prior art keywords
film
silicon oxide
silicon
oxide film
silicon nitride
Prior art date
Application number
TW089122585A
Other languages
English (en)
Chinese (zh)
Inventor
Shinpei Tsujikawa
Masahiro Ushiyama
Toshiyuki Mine
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW495887B publication Critical patent/TW495887B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
TW089122585A 1999-11-15 2000-10-26 Semiconductor device and manufacturing method of the same TW495887B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32429599 1999-11-15

Publications (1)

Publication Number Publication Date
TW495887B true TW495887B (en) 2002-07-21

Family

ID=18164217

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089122585A TW495887B (en) 1999-11-15 2000-10-26 Semiconductor device and manufacturing method of the same

Country Status (4)

Country Link
US (2) US6417052B1 (https=)
JP (1) JP2001210724A (https=)
KR (1) KR100659632B1 (https=)
TW (1) TW495887B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW580736B (en) * 2000-04-27 2004-03-21 Hitachi Ltd Fabrication method for semiconductor device
JP2003152102A (ja) * 2001-11-15 2003-05-23 Hitachi Ltd 半導体集積回路装置の製造方法
JP2003221257A (ja) * 2002-01-31 2003-08-05 Nippon Sheet Glass Co Ltd 透明薄膜の成形方法およびそれを備える透明基体
DE10238798B3 (de) * 2002-08-23 2004-03-18 Infineon Technologies Ag Hochfrequenzschalter
JP2004134687A (ja) * 2002-10-15 2004-04-30 Toshiba Corp 半導体装置及びその製造方法
JP2006332400A (ja) * 2005-05-27 2006-12-07 Nec Corp 薄膜半導体装置およびその製造方法
KR100816753B1 (ko) * 2006-10-09 2008-03-25 삼성전자주식회사 반도체 소자의 형성방법
JP4852400B2 (ja) * 2006-11-27 2012-01-11 シャープ株式会社 半導体記憶装置及び半導体装置並びに表示装置、液晶表示装置及び受像機
JP2008258349A (ja) * 2007-04-04 2008-10-23 Nec Electronics Corp 半導体装置の製造方法
JP2010080966A (ja) * 2009-09-30 2010-04-08 Fujitsu Microelectronics Ltd 半導体装置
US20130237046A1 (en) * 2012-03-09 2013-09-12 Chien-Ting Lin Semiconductor process
US9190272B1 (en) * 2014-07-15 2015-11-17 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US10535527B2 (en) * 2017-07-13 2020-01-14 Applied Materials, Inc. Methods for depositing semiconductor films
US11968828B2 (en) * 2019-07-09 2024-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a semiconductor device with a dual gate dielectric layer having middle portion thinner than the edge portions

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289820A (ja) * 1987-05-21 1988-11-28 Matsushita Electronics Corp 半導体装置の製造方法
US5927992A (en) * 1993-12-22 1999-07-27 Stmicroelectronics, Inc. Method of forming a dielectric in an integrated circuit
JPH08130250A (ja) * 1994-09-05 1996-05-21 Fuji Electric Co Ltd Ｍｏｓ型集積回路装置の製造方法
US6033943A (en) * 1996-08-23 2000-03-07 Advanced Micro Devices, Inc. Dual gate oxide thickness integrated circuit and process for making same
US6191463B1 (en) * 1997-07-15 2001-02-20 Kabushiki Kaisha Toshiba Apparatus and method of improving an insulating film on a semiconductor device
JPH11204787A (ja) * 1998-01-14 1999-07-30 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20010019158A1 (en) 2001-09-06
US6417052B1 (en) 2002-07-09
KR20010051667A (ko) 2001-06-25
JP2001210724A (ja) 2001-08-03
KR100659632B1 (ko) 2006-12-20

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees