JP2004079606A5 - - Google Patents
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- Publication number
- JP2004079606A5 JP2004079606A5 JP2002234487A JP2002234487A JP2004079606A5 JP 2004079606 A5 JP2004079606 A5 JP 2004079606A5 JP 2002234487 A JP2002234487 A JP 2002234487A JP 2002234487 A JP2002234487 A JP 2002234487A JP 2004079606 A5 JP2004079606 A5 JP 2004079606A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- film
- high dielectric
- manufacturing
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 3
- 238000007254 oxidation reaction Methods 0.000 claims 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002234487A JP2004079606A (ja) | 2002-08-12 | 2002-08-12 | 高誘電率膜を有する半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002234487A JP2004079606A (ja) | 2002-08-12 | 2002-08-12 | 高誘電率膜を有する半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004079606A JP2004079606A (ja) | 2004-03-11 |
| JP2004079606A5 true JP2004079606A5 (https=) | 2005-10-27 |
Family
ID=32019287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002234487A Pending JP2004079606A (ja) | 2002-08-12 | 2002-08-12 | 高誘電率膜を有する半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004079606A (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006025350A1 (ja) | 2004-08-30 | 2006-03-09 | The University Of Tokyo | 半導体装置及びその製造方法 |
| US7518145B2 (en) | 2007-01-25 | 2009-04-14 | International Business Machines Corporation | Integrated multiple gate dielectric composition and thickness semiconductor chip and method of manufacturing the same |
| KR101003452B1 (ko) | 2008-12-30 | 2010-12-28 | 한양대학교 산학협력단 | 멀티 비트 강유전체 메모리 소자 및 그 제조방법 |
| JP5444176B2 (ja) * | 2010-09-14 | 2014-03-19 | パナソニック株式会社 | 半導体装置 |
| JP2014053571A (ja) | 2012-09-10 | 2014-03-20 | Toshiba Corp | 強誘電体メモリ及びその製造方法 |
| US11120884B2 (en) | 2015-09-30 | 2021-09-14 | Sunrise Memory Corporation | Implementing logic function and generating analog signals using NOR memory strings |
| US11515309B2 (en) | 2019-12-19 | 2022-11-29 | Sunrise Memory Corporation | Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array |
| TWI767512B (zh) | 2020-01-22 | 2022-06-11 | 美商森恩萊斯記憶體公司 | 薄膜儲存電晶體中冷電子抹除 |
| US12550382B2 (en) | 2020-01-22 | 2026-02-10 | Sunrise Memory Corporation | Thin-film storage transistor with ferroelectric storage layer |
| US12256547B2 (en) | 2020-01-22 | 2025-03-18 | Sunrise Memory Corporation | Silicon oxide nitride tunnel dielectric for a storage transistor in a 3-dimensional NOR memory string array |
| WO2021159028A1 (en) | 2020-02-07 | 2021-08-12 | Sunrise Memory Corporation | High capacity memory circuit with low effective latency |
| WO2023287908A1 (en) | 2021-07-16 | 2023-01-19 | Sunrise Memory Corporation | 3-dimensional memory string array of thin-film ferroelectric transistors |
| US12402319B2 (en) | 2021-09-14 | 2025-08-26 | Sunrise Memory Corporation | Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel |
| CN119943750A (zh) * | 2025-01-26 | 2025-05-06 | 上海华虹宏力半导体制造有限公司 | 半导体工艺方法以及半导体器件 |
-
2002
- 2002-08-12 JP JP2002234487A patent/JP2004079606A/ja active Pending
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