JP2004079606A - 高誘電率膜を有する半導体装置及びその製造方法 - Google Patents

高誘電率膜を有する半導体装置及びその製造方法 Download PDF

Info

Publication number
JP2004079606A
JP2004079606A JP2002234487A JP2002234487A JP2004079606A JP 2004079606 A JP2004079606 A JP 2004079606A JP 2002234487 A JP2002234487 A JP 2002234487A JP 2002234487 A JP2002234487 A JP 2002234487A JP 2004079606 A JP2004079606 A JP 2004079606A
Authority
JP
Japan
Prior art keywords
film
dielectric constant
high dielectric
oxide
constant film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002234487A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004079606A5 (https=
Inventor
Kiyoshi Irino
入野　清
Yusuke Morizaki
森▲崎▼　祐輔
Yoshihiro Sugita
杉田　義博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2002234487A priority Critical patent/JP2004079606A/ja
Publication of JP2004079606A publication Critical patent/JP2004079606A/ja
Publication of JP2004079606A5 publication Critical patent/JP2004079606A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2002234487A 2002-08-12 2002-08-12 高誘電率膜を有する半導体装置及びその製造方法 Pending JP2004079606A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002234487A JP2004079606A (ja) 2002-08-12 2002-08-12 高誘電率膜を有する半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002234487A JP2004079606A (ja) 2002-08-12 2002-08-12 高誘電率膜を有する半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2004079606A true JP2004079606A (ja) 2004-03-11
JP2004079606A5 JP2004079606A5 (https=) 2005-10-27

Family

ID=32019287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002234487A Pending JP2004079606A (ja) 2002-08-12 2002-08-12 高誘電率膜を有する半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP2004079606A (https=)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182243A (ja) 2007-01-25 2008-08-07 Internatl Business Mach Corp <Ibm> 複数のゲート誘電体組成およびゲート誘電体厚を有する集積半導体チップならびにその製造方法
KR101003452B1 (ko) 2008-12-30 2010-12-28 한양대학교 산학협력단 멀티 비트 강유전체 메모리 소자 및 그 제조방법
US8063452B2 (en) 2004-08-30 2011-11-22 The University Of Tokyo Semiconductor device and method for manufacturing the same
WO2012035684A1 (ja) * 2010-09-14 2012-03-22 パナソニック株式会社 半導体装置及びその製造方法
US9362487B2 (en) 2012-09-10 2016-06-07 Kabushiki Kaisha Toshiba Ferroelectric memory and manufacturing method of the same
US11839086B2 (en) 2021-07-16 2023-12-05 Sunrise Memory Corporation 3-dimensional memory string array of thin-film ferroelectric transistors
US11844204B2 (en) 2019-12-19 2023-12-12 Sunrise Memory Corporation Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array
US11915768B2 (en) 2015-09-30 2024-02-27 Sunrise Memory Corporation Memory circuit, system and method for rapid retrieval of data sets
US12073082B2 (en) 2020-02-07 2024-08-27 Sunrise Memory Corporation High capacity memory circuit with low effective latency
US12183834B2 (en) 2020-01-22 2024-12-31 Sunrise Memory Corporation Cool electron erasing in thin-film storage transistors
US12256547B2 (en) 2020-01-22 2025-03-18 Sunrise Memory Corporation Silicon oxide nitride tunnel dielectric for a storage transistor in a 3-dimensional NOR memory string array
CN119943750A (zh) * 2025-01-26 2025-05-06 上海华虹宏力半导体制造有限公司 半导体工艺方法以及半导体器件
US12402319B2 (en) 2021-09-14 2025-08-26 Sunrise Memory Corporation Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel
US12550382B2 (en) 2020-01-22 2026-02-10 Sunrise Memory Corporation Thin-film storage transistor with ferroelectric storage layer
US12615769B2 (en) 2022-08-04 2026-04-28 Sunrise Memory Corporation Three-dimensional nor memory string arrays of thin-film ferroelectric transistors

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8063452B2 (en) 2004-08-30 2011-11-22 The University Of Tokyo Semiconductor device and method for manufacturing the same
JP2008182243A (ja) 2007-01-25 2008-08-07 Internatl Business Mach Corp <Ibm> 複数のゲート誘電体組成およびゲート誘電体厚を有する集積半導体チップならびにその製造方法
KR101003452B1 (ko) 2008-12-30 2010-12-28 한양대학교 산학협력단 멀티 비트 강유전체 메모리 소자 및 그 제조방법
WO2012035684A1 (ja) * 2010-09-14 2012-03-22 パナソニック株式会社 半導体装置及びその製造方法
JP2012064648A (ja) * 2010-09-14 2012-03-29 Panasonic Corp 半導体装置及びその製造方法
US8796779B2 (en) 2010-09-14 2014-08-05 Panasonic Corporation Semiconductor device
US9362487B2 (en) 2012-09-10 2016-06-07 Kabushiki Kaisha Toshiba Ferroelectric memory and manufacturing method of the same
US11915768B2 (en) 2015-09-30 2024-02-27 Sunrise Memory Corporation Memory circuit, system and method for rapid retrieval of data sets
US12002523B2 (en) 2015-09-30 2024-06-04 Sunrise Memory Corporation Memory circuit, system and method for rapid retrieval of data sets
US11844204B2 (en) 2019-12-19 2023-12-12 Sunrise Memory Corporation Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array
US12183834B2 (en) 2020-01-22 2024-12-31 Sunrise Memory Corporation Cool electron erasing in thin-film storage transistors
US12256547B2 (en) 2020-01-22 2025-03-18 Sunrise Memory Corporation Silicon oxide nitride tunnel dielectric for a storage transistor in a 3-dimensional NOR memory string array
US12550382B2 (en) 2020-01-22 2026-02-10 Sunrise Memory Corporation Thin-film storage transistor with ferroelectric storage layer
US12073082B2 (en) 2020-02-07 2024-08-27 Sunrise Memory Corporation High capacity memory circuit with low effective latency
US11839086B2 (en) 2021-07-16 2023-12-05 Sunrise Memory Corporation 3-dimensional memory string array of thin-film ferroelectric transistors
US12402319B2 (en) 2021-09-14 2025-08-26 Sunrise Memory Corporation Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel
US12615769B2 (en) 2022-08-04 2026-04-28 Sunrise Memory Corporation Three-dimensional nor memory string arrays of thin-film ferroelectric transistors
CN119943750A (zh) * 2025-01-26 2025-05-06 上海华虹宏力半导体制造有限公司 半导体工艺方法以及半导体器件

Similar Documents

Publication Publication Date Title
US6278164B1 (en) Semiconductor device with gate insulator formed of high dielectric film
US6881657B2 (en) Semiconductor device and method for manufacturing semiconductor device
TWI546896B (zh) 將電荷捕獲閘極堆疊整合到ｃｍｏｓ流程中之方法
JP3600476B2 (ja) 半導体装置の製造方法
KR100354119B1 (ko) 0.05마이크로미터 모스 디바이스용 처치가능-스페이서대머신-게이트 공정
CN1604278B (zh) 处理栅极结构的方法
TWI289930B (en) Method for fabricating semiconductor devices
JP3699956B2 (ja) 半導体装置の製造方法
JP2004079606A (ja) 高誘電率膜を有する半導体装置及びその製造方法
JP2004023008A (ja) 半導体集積回路装置およびその製造方法
JP2000332237A (ja) 半導体装置の製造方法
JPH11204788A (ja) 半導体装置およびその製造方法
US7507652B2 (en) Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure
JPH1174508A (ja) 半導体装置及びその製造方法
JP3770250B2 (ja) 半導体装置の製造方法
JP4261276B2 (ja) 半導体装置の製造方法
KR100964110B1 (ko) 삼중게이트절연막을 갖는 반도체집적회로장치 및 그 제조방법
KR20060022345A (ko) 반도체 장치의 제조 방법
JP4489104B2 (ja) 半導体装置の製造方法
JP3998621B2 (ja) 半導体装置及びその製造方法
US8587085B2 (en) Semiconductor device with trench isolation having a diffusion preventing film and manufacturing method thereof
CN106062957A (zh) 使用cmos工艺流程制造电荷捕获栅极堆叠的方法
JP4264039B2 (ja) 半導体装置
JP2003060067A (ja) 半導体装置およびその製造方法
JP2008021935A (ja) 電子デバイス及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050803

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050803

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20080730

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080826

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080909

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081027

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090113

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090309

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090421