JP2012064648A - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 137
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 125000006850 spacer group Chemical group 0.000 claims description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 239000007772 electrode material Substances 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910052746 lanthanum Inorganic materials 0.000 claims description 11
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 230000008719 thickening Effects 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 description 26
- 238000002513 implantation Methods 0.000 description 24
- 238000005468 ion implantation Methods 0.000 description 20
- 229910052760 oxygen Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
【解決手段】同じ導電型の第1のMISトランジスタ及び第2のMISトランジスタが同じ半導体基板50上に設けられている。第1のMISトランジスタにおけるゲート絶縁膜52aの界面層2Aの厚さは、第2のMISトランジスタにおけるゲート絶縁膜52bの界面層2bの厚さよりも厚い。
【選択図】図9
Description
2、2a、2b、2c、2d 界面層
2A、2C 厚い界面層
3、3a、3b、3c、3d high−k膜
3A、3B Al含有high−k膜
3C、3D La含有high−k膜
4、4a、4b pMIS用キャップ膜
4’、4c、4d nMIS用キャップ膜
6、6a、6b、6c、6d 金属含有膜
7、7a、7b、7c、7d シリコン膜
8 絶縁膜
8a、8c オフセットスペーサ
8b、8d 下地スペーサ
9a、9b p型エクステンション領域
9c、9d n型エクステンション領域
11 レジストパターン
13a、13c シリコン酸化膜
16a、16b、16c、16d 内側サイドウォールスペーサ
17a、17b、17c、17d 外側サイドウォールスペーサ
18a、18b、18c、18d サイドウォールスペーサ
19a、19b p型ソースドレイン領域
19c、19d n型ソースドレイン領域
20a、20b、20c、20d 金属シリサイド層
50 半導体基板
50a、50b、50c、50d 活性領域
51N n型ウェル領域
51P p型ウェル領域
52a、52b、52c、52d ゲート絶縁膜
53a、53b、53c、53d ゲート電極
Claims (19)
- 同じ導電型の第1のMISトランジスタ及び第2のMISトランジスタを同じ半導体基板上に有する半導体装置であって、
前記第1のMISトランジスタは、前記半導体基板における第1の活性領域上に形成された第1のゲート絶縁膜と、前記第1のゲート絶縁膜上に形成された第1のゲート電極とを備え、
前記第2のMISトランジスタは、前記半導体基板における第2の活性領域上に形成された第2のゲート絶縁膜と、前記第2のゲート絶縁膜上に形成された第2のゲート電極とを備え、
前記第1のゲート絶縁膜は、前記半導体基板と接する第1の界面層と、前記第1の界面層上に形成された第1の高誘電率絶縁膜とを含み、
前記第2のゲート絶縁膜は、前記半導体基板と接する第2の界面層と、前記第2の界面層上に形成された第2の高誘電率絶縁膜とを含み、
前記第1の界面層の厚さは、前記第2の界面層の厚さよりも厚いことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記第1のゲート電極の側面上には第1の絶縁性スペーサを介して第1のサイドウォールスペーサが形成されており、
前記第2のゲート電極の側面上には第2の絶縁性スペーサを介して第2のサイドウォールスペーサが形成されており、
前記第1の絶縁性スペーサの厚さは、前記第2の絶縁性スペーサの厚さよりも薄いことを特徴とする半導体装置。 - 請求項2に記載の半導体装置において、
前記第1の絶縁性スペーサは、I字状の断面形状を持つオフセットスペーサであり、
前記第2の絶縁性スペーサは、L字状の断面形状を持つ下地スペーサであることを特徴とする半導体装置。 - 請求項2又は3に記載の半導体装置において、
前記第1のゲート電極は、前記第1の高誘電率絶縁膜上に形成された第1の金属含有膜と、前記第1の金属含有膜上に形成された第1のシリコン膜とを含み、
前記第2のゲート電極は、前記第2の高誘電率絶縁膜上に形成された第2の金属含有膜と、前記第2の金属含有膜上に形成された第2のシリコン膜とを含み、
前記第1のシリコン膜と前記第1の絶縁性スペーサとの間にはシリコン酸化膜が介在しており、
前記第2のシリコン膜と前記第2の絶縁性スペーサと接していることを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記第1のシリコン膜上には第1の金属シリサイド層が形成されており、
前記第2のシリコン膜上には第2の金属シリサイド層が形成されていることを特徴とする半導体装置。 - 請求項4又は5に記載の半導体装置において、
前記第1の活性領域と前記第1のサイドウォールスペーサとの間にもシリコン酸化膜が介在していることを特徴とする半導体装置。 - 請求項2〜6のいずれか1項に記載の半導体装置において、
前記第1の絶縁性スペーサ及び前記第2の絶縁性スペーサはシリコン窒化膜からなることを特徴とする半導体装置。 - 請求項1〜7のいずれか1項に記載の半導体装置において、
前記第1のMISトランジスタ及び前記第2のMISトランジスタはpMISトランジスタであり、
前記第1の高誘電率絶縁膜及び前記第2の高誘電率絶縁膜はアルミニウムを含有することを特徴とする半導体装置。 - 請求項8に記載の半導体装置において、
前記第1のゲート絶縁膜は、前記第1の高誘電率絶縁膜上に形成され且つアルミニウムを含有する第1のキャップ膜をさらに含み、
前記第2のゲート絶縁膜は、前記第2の高誘電率絶縁膜上に形成され且つアルミニウムを含有する第2のキャップ膜をさらに含むことを特徴とする半導体装置。 - 請求項1〜7のいずれか1項に記載の半導体装置において、
前記第1のMISトランジスタ及び前記第2のMISトランジスタはnMISトランジスタであり、
前記第1の高誘電率絶縁膜及び前記第2の高誘電率絶縁膜はランタンを含有することを特徴とする半導体装置。 - 請求項10に記載の半導体装置において、
前記第1のゲート絶縁膜は、前記第1の高誘電率絶縁膜上に形成され且つランタンを含有する第1のキャップ膜をさらに含み、
前記第2のゲート絶縁膜は、前記第2の高誘電率絶縁膜上に形成され且つランタンを含有する第2のキャップ膜をさらに含むことを特徴とする半導体装置。 - 請求項1〜11のいずれか1項に記載の半導体装置において、
前記第1の高誘電率絶縁膜及び前記第2の高誘電率絶縁膜はハフニウム又はジルコニウムを含むことを特徴とする半導体装置。 - 請求項1〜12のいずれか1項に記載の半導体装置において、
前記第1の界面層及び前記第2の界面層はシリコン酸化膜からなることを特徴とする半導体装置。 - 請求項1〜13のいずれか1項に記載の半導体装置において、
前記第1の高誘電率絶縁膜の厚さと、前記第2の高誘電率絶縁膜の厚さとは実質的に同じであることを特徴とする半導体装置。 - 請求項1〜14のいずれか1項に記載の半導体装置において、
前記第1のゲート電極の材料と、前記第2のゲート電極の材料とは実質的に同じであることを特徴とする半導体装置。 - 請求項1〜15のいずれか1項に記載の半導体装置において、
前記第1のMISトランジスタの実効仕事関数は、前記第2のMISトランジスタの実効仕事関数よりも高いことを特徴とする半導体装置。 - 第1の活性領域及び第2の活性領域を有する半導体基板上に、界面層、高誘電率絶縁膜及びゲート電極材料膜を順次形成する工程(a)と、
前記ゲート電極材料膜、前記高誘電率絶縁膜及び前記界面層をパターニングすることによって、前記第1の活性領域上に、前記界面層及び前記高誘電率絶縁膜を含む第1のゲート絶縁膜を介して、前記ゲート電極材料膜からなる第1のゲート電極を形成すると共に、前記第2の活性領域上に、前記界面層及び前記高誘電率絶縁膜を含む第2のゲート絶縁膜を介して、前記ゲート電極材料膜からなる第2のゲート電極を形成する工程(b)と、
前記工程(b)の後に、前記第1のゲート絶縁膜における前記界面層の厚さを選択的に厚くする工程(c)とを備えていることを特徴とする半導体装置の製造方法。 - 請求項17に記載の半導体装置の製造方法において、
前記工程(c)は、前記第1のゲート電極及び前記第2のゲート電極を絶縁膜によって覆った後、前記第1のゲート電極を覆う前記絶縁膜に対して選択的にエッチングを行い、その後、酸化処理によって前記第1のゲート絶縁膜における前記界面層を厚くする工程を含むことを特徴とする半導体装置の製造方法。 - 請求項18に記載の半導体装置の製造方法において、
前記ゲート電極材料膜は、前記高誘電率絶縁膜上に形成された金属含有膜と、前記金属含有膜上に形成されたシリコン膜とを含み、
前記工程(c)において、前記第1のゲート電極の側面上に残存する前記絶縁膜と、前記第1のゲート電極における前記シリコン膜との間に、シリコン酸化膜が形成されることを特徴とする半導体装置の製造方法。
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