JP7344707B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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JP7344707B2
JP7344707B2 JP2019144689A JP2019144689A JP7344707B2 JP 7344707 B2 JP7344707 B2 JP 7344707B2 JP 2019144689 A JP2019144689 A JP 2019144689A JP 2019144689 A JP2019144689 A JP 2019144689A JP 7344707 B2 JP7344707 B2 JP 7344707B2
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layer
insulating layer
transistor
metal oxide
film
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JP2019144689A
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Japanese (ja)
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JP2020027942A (ja
JP2020027942A5 (https=
Inventor
純一 肥塚
健一 岡崎
昌孝 中田
泰靖 保坂
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2020027942A publication Critical patent/JP2020027942A/ja
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Priority to JP2023143832A priority Critical patent/JP7682962B2/ja
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Priority to JP2025081136A priority patent/JP2025118859A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2019144689A 2018-08-09 2019-08-06 半導体装置の作製方法 Active JP7344707B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023143832A JP7682962B2 (ja) 2018-08-09 2023-09-05 半導体装置の作製方法
JP2025081136A JP2025118859A (ja) 2018-08-09 2025-05-14 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018149954 2018-08-09
JP2018149954 2018-08-09

Related Child Applications (1)

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JP2023143832A Division JP7682962B2 (ja) 2018-08-09 2023-09-05 半導体装置の作製方法

Publications (3)

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JP2020027942A JP2020027942A (ja) 2020-02-20
JP2020027942A5 JP2020027942A5 (https=) 2022-08-09
JP7344707B2 true JP7344707B2 (ja) 2023-09-14

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JP2019144689A Active JP7344707B2 (ja) 2018-08-09 2019-08-06 半導体装置の作製方法
JP2023143832A Active JP7682962B2 (ja) 2018-08-09 2023-09-05 半導体装置の作製方法
JP2025081136A Pending JP2025118859A (ja) 2018-08-09 2025-05-14 半導体装置の作製方法

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JP2025081136A Pending JP2025118859A (ja) 2018-08-09 2025-05-14 半導体装置の作製方法

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US (1) US11069796B2 (https=)
JP (3) JP7344707B2 (https=)
KR (1) KR20200018281A (https=)

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KR102914910B1 (ko) 2018-10-26 2026-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물의 제작 방법, 반도체 장치의 제작 방법
US11398437B2 (en) * 2019-12-13 2022-07-26 Semiconductor Components Industries, Llc Power device including metal layer
CN112002706B (zh) * 2020-08-10 2022-09-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
JP2023149086A (ja) 2022-03-30 2023-10-13 株式会社ジャパンディスプレイ 半導体装置の製造方法
CN118872076A (zh) * 2022-03-30 2024-10-29 株式会社日本显示器 半导体装置及半导体装置的制造方法
JP2023149085A (ja) 2022-03-30 2023-10-13 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP7464863B2 (ja) * 2022-05-31 2024-04-10 日新電機株式会社 固定電荷制御方法、薄膜トランジスタの製造方法及び薄膜トランジスタ
JP7382608B1 (ja) * 2022-05-31 2023-11-17 国立大学法人東京農工大学 固定電荷発現方法、薄膜トランジスタの製造方法及び薄膜トランジスタ
JP2025091771A (ja) * 2023-12-07 2025-06-19 日新電機株式会社 薄膜トランジスタの製造方法

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JP2013175714A (ja) 2012-01-26 2013-09-05 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法

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Also Published As

Publication number Publication date
JP2020027942A (ja) 2020-02-20
JP7682962B2 (ja) 2025-05-26
JP2023168348A (ja) 2023-11-24
US20200052100A1 (en) 2020-02-13
KR20200018281A (ko) 2020-02-19
JP2025118859A (ja) 2025-08-13
US11069796B2 (en) 2021-07-20

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