JP2020027942A5 - - Google Patents
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- Publication number
- JP2020027942A5 JP2020027942A5 JP2019144689A JP2019144689A JP2020027942A5 JP 2020027942 A5 JP2020027942 A5 JP 2020027942A5 JP 2019144689 A JP2019144689 A JP 2019144689A JP 2019144689 A JP2019144689 A JP 2019144689A JP 2020027942 A5 JP2020027942 A5 JP 2020027942A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- manufacturing
- metal oxide
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 9
- 229910044991 metal oxide Inorganic materials 0.000 claims 9
- 150000004706 metal oxides Chemical class 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 229910052738 indium Inorganic materials 0.000 claims 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 3
- 229910052725 zinc Inorganic materials 0.000 claims 3
- 239000011701 zinc Substances 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 239000011777 magnesium Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical group [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Chemical group 0.000 claims 1
- -1 element M Chemical compound 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Chemical group 0.000 claims 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical group [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Chemical group 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Chemical group 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical group [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023143832A JP7682962B2 (ja) | 2018-08-09 | 2023-09-05 | 半導体装置の作製方法 |
| JP2025081136A JP2025118859A (ja) | 2018-08-09 | 2025-05-14 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018149954 | 2018-08-09 | ||
| JP2018149954 | 2018-08-09 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023143832A Division JP7682962B2 (ja) | 2018-08-09 | 2023-09-05 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020027942A JP2020027942A (ja) | 2020-02-20 |
| JP2020027942A5 true JP2020027942A5 (https=) | 2022-08-09 |
| JP7344707B2 JP7344707B2 (ja) | 2023-09-14 |
Family
ID=69407116
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019144689A Active JP7344707B2 (ja) | 2018-08-09 | 2019-08-06 | 半導体装置の作製方法 |
| JP2023143832A Active JP7682962B2 (ja) | 2018-08-09 | 2023-09-05 | 半導体装置の作製方法 |
| JP2025081136A Pending JP2025118859A (ja) | 2018-08-09 | 2025-05-14 | 半導体装置の作製方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023143832A Active JP7682962B2 (ja) | 2018-08-09 | 2023-09-05 | 半導体装置の作製方法 |
| JP2025081136A Pending JP2025118859A (ja) | 2018-08-09 | 2025-05-14 | 半導体装置の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11069796B2 (https=) |
| JP (3) | JP7344707B2 (https=) |
| KR (1) | KR20200018281A (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102914910B1 (ko) | 2018-10-26 | 2026-01-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 금속 산화물의 제작 방법, 반도체 장치의 제작 방법 |
| US11398437B2 (en) * | 2019-12-13 | 2022-07-26 | Semiconductor Components Industries, Llc | Power device including metal layer |
| CN112002706B (zh) * | 2020-08-10 | 2022-09-09 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
| JP2023149086A (ja) | 2022-03-30 | 2023-10-13 | 株式会社ジャパンディスプレイ | 半導体装置の製造方法 |
| CN118872076A (zh) * | 2022-03-30 | 2024-10-29 | 株式会社日本显示器 | 半导体装置及半导体装置的制造方法 |
| JP2023149085A (ja) | 2022-03-30 | 2023-10-13 | 株式会社ジャパンディスプレイ | 半導体装置の製造方法 |
| JP7464863B2 (ja) * | 2022-05-31 | 2024-04-10 | 日新電機株式会社 | 固定電荷制御方法、薄膜トランジスタの製造方法及び薄膜トランジスタ |
| JP7382608B1 (ja) * | 2022-05-31 | 2023-11-17 | 国立大学法人東京農工大学 | 固定電荷発現方法、薄膜トランジスタの製造方法及び薄膜トランジスタ |
| JP2025091771A (ja) * | 2023-12-07 | 2025-06-19 | 日新電機株式会社 | 薄膜トランジスタの製造方法 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011074407A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5708910B2 (ja) | 2010-03-30 | 2015-04-30 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
| US9490368B2 (en) * | 2010-05-20 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| WO2011145467A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101938726B1 (ko) * | 2010-06-11 | 2019-01-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| US8883556B2 (en) | 2010-12-28 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8969130B2 (en) | 2011-11-18 | 2015-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof |
| JP5917385B2 (ja) | 2011-12-27 | 2016-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9653614B2 (en) | 2012-01-23 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8956912B2 (en) | 2012-01-26 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP6091905B2 (ja) | 2012-01-26 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9859114B2 (en) | 2012-02-08 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device with an oxygen-controlling insulating layer |
| US9553200B2 (en) | 2012-02-29 | 2017-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN107591316B (zh) | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
| JP6383616B2 (ja) * | 2013-09-25 | 2018-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102529174B1 (ko) | 2013-12-27 | 2023-05-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9564535B2 (en) | 2014-02-28 | 2017-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module |
| WO2015128774A1 (en) | 2014-02-28 | 2015-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| US10361290B2 (en) | 2014-03-14 | 2019-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film |
| US9887291B2 (en) | 2014-03-19 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module |
| US9768315B2 (en) | 2014-04-18 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device having the same |
| TWI669761B (zh) | 2014-05-30 | 2019-08-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置、包括該半導體裝置的顯示裝置 |
| TWI666776B (zh) | 2014-06-20 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及包括該半導體裝置的顯示裝置 |
| JP6676316B2 (ja) | 2014-09-12 | 2020-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20160155759A1 (en) | 2014-11-28 | 2016-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
| US9818880B2 (en) | 2015-02-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| US11024725B2 (en) | 2015-07-24 | 2021-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including metal oxide film |
| WO2017064590A1 (en) | 2015-10-12 | 2017-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2017076788A (ja) | 2015-10-12 | 2017-04-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9852926B2 (en) | 2015-10-20 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
| US10714633B2 (en) * | 2015-12-15 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| US10205008B2 (en) | 2016-08-03 | 2019-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US10692994B2 (en) | 2016-12-23 | 2020-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
2019
- 2019-07-30 US US16/526,389 patent/US11069796B2/en active Active
- 2019-08-02 KR KR1020190094393A patent/KR20200018281A/ko not_active Withdrawn
- 2019-08-06 JP JP2019144689A patent/JP7344707B2/ja active Active
-
2023
- 2023-09-05 JP JP2023143832A patent/JP7682962B2/ja active Active
-
2025
- 2025-05-14 JP JP2025081136A patent/JP2025118859A/ja active Pending
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