ATE515791T1 - Herstellungsverfahren für eine halbleitervorrichtung - Google Patents
Herstellungsverfahren für eine halbleitervorrichtungInfo
- Publication number
- ATE515791T1 ATE515791T1 AT06823881T AT06823881T ATE515791T1 AT E515791 T1 ATE515791 T1 AT E515791T1 AT 06823881 T AT06823881 T AT 06823881T AT 06823881 T AT06823881 T AT 06823881T AT E515791 T1 ATE515791 T1 AT E515791T1
- Authority
- AT
- Austria
- Prior art keywords
- forming
- photoresist pattern
- layer
- etching
- photoresist
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract 8
- 238000000034 method Methods 0.000 abstract 6
- 238000005530 etching Methods 0.000 abstract 3
- 238000001459 lithography Methods 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
- 239000002105 nanoparticle Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Drying Of Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20050118218 | 2005-12-06 | ||
KR1020060050749A KR100704380B1 (ko) | 2005-12-06 | 2006-06-07 | 반도체 소자 제조 방법 |
PCT/KR2006/005173 WO2007066937A1 (en) | 2005-12-06 | 2006-12-04 | Method of manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE515791T1 true ATE515791T1 (de) | 2011-07-15 |
Family
ID=38161049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06823881T ATE515791T1 (de) | 2005-12-06 | 2006-12-04 | Herstellungsverfahren für eine halbleitervorrichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US7947585B2 (de) |
EP (1) | EP1958243B1 (de) |
JP (1) | JP5038326B2 (de) |
KR (1) | KR100704380B1 (de) |
CN (1) | CN101322230B (de) |
AT (1) | ATE515791T1 (de) |
WO (1) | WO2007066937A1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100698013B1 (ko) * | 2005-12-08 | 2007-03-23 | 한국전자통신연구원 | 쇼트키 장벽 관통 트랜지스터 및 그 제조 방법 |
US7473623B2 (en) * | 2006-06-30 | 2009-01-06 | Advanced Micro Devices, Inc. | Providing stress uniformity in a semiconductor device |
KR20080057790A (ko) * | 2006-12-21 | 2008-06-25 | 동부일렉트로닉스 주식회사 | 플래시 메모리 및 그 제조 방법 |
US7947545B2 (en) * | 2007-10-31 | 2011-05-24 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for producing a transistor gate with sub-photolithographic dimensions |
FR2968128B1 (fr) * | 2010-11-26 | 2013-01-04 | St Microelectronics Sa | Cellule precaracterisee pour circuit intégré |
US8580664B2 (en) | 2011-03-31 | 2013-11-12 | Tokyo Electron Limited | Method for forming ultra-shallow boron doping regions by solid phase diffusion |
WO2012135599A1 (en) * | 2011-03-31 | 2012-10-04 | Tokyo Electron Limited | Method for forming ultra-shallow doping regions by solid phase diffusion |
US8569158B2 (en) | 2011-03-31 | 2013-10-29 | Tokyo Electron Limited | Method for forming ultra-shallow doping regions by solid phase diffusion |
CN103854984B (zh) * | 2012-12-03 | 2017-03-01 | 中国科学院微电子研究所 | 一种后栅工艺假栅的制造方法和后栅工艺假栅 |
US9093379B2 (en) | 2013-05-29 | 2015-07-28 | International Business Machines Corporation | Silicidation blocking process using optically sensitive HSQ resist and organic planarizing layer |
US9548238B2 (en) | 2013-08-12 | 2017-01-17 | Globalfoundries Inc. | Method of manufacturing a semiconductor device using a self-aligned OPL replacement contact and patterned HSQ and a semiconductor device formed by same |
US9899224B2 (en) | 2015-03-03 | 2018-02-20 | Tokyo Electron Limited | Method of controlling solid phase diffusion of boron dopants to form ultra-shallow doping regions |
US10050147B2 (en) | 2015-07-24 | 2018-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN105931991B (zh) * | 2016-06-17 | 2019-02-12 | 深圳市华星光电技术有限公司 | 电极的制备方法 |
CN109643726A (zh) * | 2016-08-30 | 2019-04-16 | 英特尔公司 | 量子点装置 |
GB201906936D0 (en) | 2019-05-16 | 2019-07-03 | Quantum Motion Tech Limited | Processor element for quantum information processor |
JP7494104B2 (ja) * | 2020-12-24 | 2024-06-03 | キオクシア株式会社 | パターン形成方法およびテンプレートの製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4350541A (en) * | 1979-08-13 | 1982-09-21 | Nippon Telegraph & Telephone Public Corp. | Doping from a photoresist layer |
JP3029653B2 (ja) * | 1990-09-14 | 2000-04-04 | 株式会社東芝 | 半導体装置の製造方法 |
JPH04340277A (ja) * | 1991-01-25 | 1992-11-26 | Sony Corp | Mos型半導体集積回路の製造方法 |
JPH0794715A (ja) * | 1993-09-21 | 1995-04-07 | Matsushita Electric Ind Co Ltd | Mos型トランジスタの製造方法 |
JPH1126757A (ja) * | 1997-06-30 | 1999-01-29 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3545592B2 (ja) * | 1998-03-16 | 2004-07-21 | 株式会社東芝 | 半導体装置の製造方法 |
JPH11317517A (ja) * | 1998-05-06 | 1999-11-16 | Sony Corp | 半導体装置およびその製造方法 |
US6225173B1 (en) | 1998-11-06 | 2001-05-01 | Advanced Micro Devices, Inc. | Recessed channel structure for manufacturing shallow source/drain extensions |
JP2000188394A (ja) | 1998-12-21 | 2000-07-04 | Hitachi Ltd | 半導体装置及びその製造方法 |
US6033963A (en) | 1999-08-30 | 2000-03-07 | Taiwan Semiconductor Manufacturing Company | Method of forming a metal gate for CMOS devices using a replacement gate process |
KR100456319B1 (ko) * | 2000-05-19 | 2004-11-10 | 주식회사 하이닉스반도체 | 폴리머와 산화막의 연마 선택비 차이를 이용한 반도체소자의 게이트 형성 방법 |
US20030015758A1 (en) * | 2001-07-21 | 2003-01-23 | Taylor, Jr William J. | Semiconductor device and method therefor |
US6762130B2 (en) * | 2002-05-31 | 2004-07-13 | Texas Instruments Incorporated | Method of photolithographically forming extremely narrow transistor gate elements |
US6995430B2 (en) * | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
US6916694B2 (en) * | 2003-08-28 | 2005-07-12 | International Business Machines Corporation | Strained silicon-channel MOSFET using a damascene gate process |
-
2006
- 2006-06-07 KR KR1020060050749A patent/KR100704380B1/ko not_active IP Right Cessation
- 2006-12-04 EP EP06823881A patent/EP1958243B1/de not_active Not-in-force
- 2006-12-04 JP JP2008543205A patent/JP5038326B2/ja not_active Expired - Fee Related
- 2006-12-04 AT AT06823881T patent/ATE515791T1/de not_active IP Right Cessation
- 2006-12-04 WO PCT/KR2006/005173 patent/WO2007066937A1/en active Application Filing
- 2006-12-04 US US12/090,891 patent/US7947585B2/en not_active Expired - Fee Related
- 2006-12-04 CN CN2006800457415A patent/CN101322230B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20080254606A1 (en) | 2008-10-16 |
KR100704380B1 (ko) | 2007-04-09 |
CN101322230A (zh) | 2008-12-10 |
JP2009518822A (ja) | 2009-05-07 |
WO2007066937A1 (en) | 2007-06-14 |
US7947585B2 (en) | 2011-05-24 |
EP1958243A4 (de) | 2010-04-07 |
CN101322230B (zh) | 2012-02-08 |
EP1958243B1 (de) | 2011-07-06 |
EP1958243A1 (de) | 2008-08-20 |
JP5038326B2 (ja) | 2012-10-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |