JP2023508637A5 - - Google Patents

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Publication number
JP2023508637A5
JP2023508637A5 JP2022529860A JP2022529860A JP2023508637A5 JP 2023508637 A5 JP2023508637 A5 JP 2023508637A5 JP 2022529860 A JP2022529860 A JP 2022529860A JP 2022529860 A JP2022529860 A JP 2022529860A JP 2023508637 A5 JP2023508637 A5 JP 2023508637A5
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bisbe
alloy layer
sot
dopant element
dopant
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JP2022529860A
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English (en)
Japanese (ja)
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JP2023508637A (ja
JP7371256B2 (ja
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Priority claimed from US16/917,334 external-priority patent/US11495741B2/en
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JP2022529860A 2020-06-30 2020-12-23 トポロジカルインシュレーターとして使用するためのビスマスアンチモン合金 Active JP7371256B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/917,334 2020-06-30
US16/917,334 US11495741B2 (en) 2020-06-30 2020-06-30 Bismuth antimony alloys for use as topological insulators
PCT/US2020/066902 WO2022005518A1 (en) 2020-06-30 2020-12-23 Bismuth antimony alloys for use as topological insulators

Publications (3)

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JP2023508637A JP2023508637A (ja) 2023-03-03
JP2023508637A5 true JP2023508637A5 (https=) 2023-03-22
JP7371256B2 JP7371256B2 (ja) 2023-10-30

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JP2022529860A Active JP7371256B2 (ja) 2020-06-30 2020-12-23 トポロジカルインシュレーターとして使用するためのビスマスアンチモン合金

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Country Link
US (1) US11495741B2 (https=)
EP (1) EP4172784B1 (https=)
JP (1) JP7371256B2 (https=)
CN (1) CN114730286B (https=)
WO (1) WO2022005518A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11694713B2 (en) * 2020-02-12 2023-07-04 Western Digital Technologies, Inc. BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation
US11489108B2 (en) 2020-04-28 2022-11-01 Western Digital Technologies, Inc. BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation
US11968905B2 (en) * 2020-07-01 2024-04-23 Northeastern University Sputter deposited crystalline ordered topological insulator/ferromagnet (TI/FM) thin film heterostructures for spintronics applications
US11100946B1 (en) 2020-07-01 2021-08-24 Western Digital Technologies, Inc. SOT differential reader and method of making same
US11094338B1 (en) 2020-07-09 2021-08-17 Western Digital Technologies, Inc. SOT film stack for differential reader
US12178140B2 (en) 2020-12-02 2024-12-24 Northeastern University Topological insulator/normal metal bilayers as spin hall materials for spin orbit torque devices, and methods of fabrication of same
US12156479B2 (en) * 2021-01-04 2024-11-26 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and manufacturing method thereof
US11763973B2 (en) 2021-08-13 2023-09-19 Western Digital Technologies, Inc. Buffer layers and interlayers that promote BiSbx (012) alloy orientation for SOT and MRAM devices
US11532323B1 (en) * 2021-08-18 2022-12-20 Western Digital Technologies, Inc. BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices
JP7676650B2 (ja) 2021-12-22 2025-05-14 ウェスタン デジタル テクノロジーズ インコーポレーテッド より平滑なＢｉＳｂ膜表面のために粒径を微細化するための新規なドーピングプロセス
US11875827B2 (en) 2022-03-25 2024-01-16 Western Digital Technologies, Inc. SOT reader using BiSb topological insulator
US11783853B1 (en) 2022-05-31 2023-10-10 Western Digital Technologies, Inc. Topological insulator based spin torque oscillator reader
US12106791B2 (en) 2022-06-30 2024-10-01 Western Digital Technologies, Inc. Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices
US12154603B1 (en) 2023-06-14 2024-11-26 Western Digital Technologies, Inc. Spin-orbit torque (SOT) writer with topological insulator materials
US12354627B2 (en) 2023-06-28 2025-07-08 Western Digital Technologies, Inc. Higher areal density non-local spin orbit torque (SOT) writer with topological insulator materials

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751521A (en) 1996-09-23 1998-05-12 International Business Machines Corporation Differential spin valve sensor structure
JP3760095B2 (ja) 2000-12-14 2006-03-29 株式会社日立グローバルストレージテクノロジーズ ２素子型再生センサ、垂直磁気記録再生用薄膜磁気ヘッド及び垂直磁気記録再生装置
US6667861B2 (en) 2001-07-16 2003-12-23 International Business Machines Corporation Dual/differential GMR head with a single AFM layer
US6680828B2 (en) 2002-06-07 2004-01-20 International Business Machines Corporation Differential GMR head system and method using self-pinned layer
US7298595B2 (en) 2003-09-26 2007-11-20 Hitachi Global Storage Technologies Netherlands B.V. Differential GMR sensor with multi-layer bias structure between free layers of first and second self-pinned GMR sensors
US7016160B2 (en) 2003-11-18 2006-03-21 Seagate Technology Llc Differential CPP reader for perpendicular magnetic recording
US7242556B2 (en) 2004-06-21 2007-07-10 Hitachi Global Storage Technologies Netherlands B.V. CPP differential GMR sensor having antiparallel stabilized free layers for perpendicular recording
US7436632B2 (en) 2004-06-30 2008-10-14 Seagate Technology Llc Differential/dual CPP recording head
US7643255B2 (en) 2006-03-17 2010-01-05 Hitachi Global Storage Technologies Netherlands B.V. Anti-parallel magnetization layers in the free layers and magnetization layers of a differential sensor read head
JP2009026400A (ja) 2007-07-20 2009-02-05 Hitachi Global Storage Technologies Netherlands Bv 差動磁気抵抗効果型磁気ヘッド
US7881018B2 (en) 2007-09-05 2011-02-01 Hitachi Global Storage Technologies Netherlands B.V. Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noise
JP4934582B2 (ja) 2007-12-25 2012-05-16 株式会社日立製作所 スピンホール効果素子を用いた磁気センサ、磁気ヘッド及び磁気メモリ
JP2010113782A (ja) 2008-11-10 2010-05-20 Hitachi Global Storage Technologies Netherlands Bv 出力をバランス化した差動型再生磁気ヘッド及びその製造方法
JP2010140524A (ja) 2008-12-09 2010-06-24 Hitachi Global Storage Technologies Netherlands Bv 差動型磁気抵抗効果ヘッド及び磁気記録再生装置
US8125746B2 (en) 2009-07-13 2012-02-28 Seagate Technology Llc Magnetic sensor with perpendicular anisotrophy free layer and side shields
US8654465B2 (en) 2011-12-09 2014-02-18 HGST Netherlands B.V. Implementing spin-torque oscillator sensing with enhanced demodulator for hard disk drives
US8570677B2 (en) 2011-12-09 2013-10-29 HGST Netherlands B.V. Implementing spin-torque oscillator sensing with enhanced integrated demodulator for hard disk drives
US8553346B2 (en) 2011-12-09 2013-10-08 HGST Netherlands B.V. Implementing spin-torque oscillator sensing with enhanced delay control feedback circuit for hard disk drives
US9099119B2 (en) 2013-02-11 2015-08-04 HGST Netherlands B.V. Magnetic read sensor using spin hall effect
US9099188B2 (en) 2013-03-09 2015-08-04 Yimin Guo Magnetoresistive element
US9076954B2 (en) * 2013-08-08 2015-07-07 Samsung Electronics Co., Ltd. Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices
US9741369B2 (en) 2014-02-28 2017-08-22 Western Digital Technologies, Inc. Multi-track reader for improved signal to noise ratio
US20150287426A1 (en) 2014-04-07 2015-10-08 HGST Netherlands B.V. Magnetic read head having spin hall effect layer
US10153425B2 (en) 2015-09-10 2018-12-11 Institute Of Physics, Chinese Academy Of Sciences Spin logic device and electronic equipment including same
US9472216B1 (en) 2015-09-23 2016-10-18 Western Digital (Fremont), Llc Differential dual free layer magnetic reader
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
WO2017090736A1 (ja) 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転型磁気抵抗効果素子及びスピン流磁化反転型磁気抵抗効果素子の製造方法
US20170221506A1 (en) 2016-02-02 2017-08-03 Seagate Technology Llc Thin Data Reader Cap
US9806710B2 (en) * 2016-03-31 2017-10-31 University Of Iowa Research Foundation Voltage-controlled magnetic-based devices having topological insulator/magnetic insulator heterostructure
TWI634680B (zh) 2016-04-19 2018-09-01 國立清華大學 具熱穩定性之自旋軌道扭力式磁性隨存記憶體
US10283561B2 (en) * 2016-12-14 2019-05-07 Regents Of The University Of Minnesota Two-terminal spintronic devices
US9947347B1 (en) 2016-12-20 2018-04-17 Western Digital Technologies, Inc. Magnetic sensor using inverse spin hall effect
JP7024204B2 (ja) * 2017-04-21 2022-02-24 Tdk株式会社 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ
US10720570B2 (en) 2017-06-12 2020-07-21 Western Digital Technologies, Inc. Magnetic sensor using spin hall effect
US10354709B2 (en) 2017-06-19 2019-07-16 Regents Of The University Of Minnesota Composite free magnetic layers
US10210888B1 (en) 2017-06-23 2019-02-19 Western Digital Technologies, Inc. Dual spin-orbit torque oscillator in magnetic recording
US10014012B1 (en) 2017-06-23 2018-07-03 Western Digital Technologies, Inc. Spin-orbit torque based magnetic recording
CN109327975A (zh) 2017-07-31 2019-02-12 奥特斯奥地利科技与系统技术有限公司 用于部件承载件中的孔的无缺陷铜填充的方法和镀覆装置
US10923651B2 (en) 2017-08-16 2021-02-16 National University Of Singapore Spin orbit materials for efficient spin current generation
JP7227614B2 (ja) * 2017-09-15 2023-02-22 国立大学法人東京工業大学 磁性体とＢｉＳｂの積層構造の製造方法、磁気抵抗メモリ、純スピン注入源
WO2019125388A1 (en) 2017-12-18 2019-06-27 Intel Corporation Spin orbit coupling based oscillator using exchange bias
CN110392931B (zh) 2018-02-19 2022-05-03 Tdk株式会社 自旋轨道转矩型磁化旋转元件、自旋轨道转矩型磁阻效应元件及磁存储器
JP6530527B1 (ja) * 2018-03-19 2019-06-12 株式会社東芝 磁気記憶装置
US11251365B2 (en) * 2018-03-30 2022-02-15 Intel Corporation High blocking temperature spin orbit torque electrode
US10790002B2 (en) 2018-06-21 2020-09-29 Samsung Electronics Co., Ltd. Giant spin hall-based compact neuromorphic cell optimized for differential read inference
US10483457B1 (en) 2018-08-14 2019-11-19 Qualcomm Incorporated Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array
US11875832B2 (en) * 2018-09-05 2024-01-16 Keio University Spintronics device, magnetic memory, and electronic apparatus
KR102604071B1 (ko) * 2018-11-23 2023-11-20 삼성전자주식회사 자기 기억 소자 및 이의 제조 방법
KR102604743B1 (ko) * 2018-12-11 2023-11-22 삼성전자주식회사 자기 메모리 장치
US10991390B2 (en) 2019-02-08 2021-04-27 Western Digital Technologies, Inc. Head assembly with suspension system for a tape embedded drive
US11205447B2 (en) 2019-08-21 2021-12-21 Headway Technologies, Inc. Reader noise reduction using spin hall effects
JP2021057357A (ja) 2019-09-26 2021-04-08 国立大学法人東京工業大学 磁気抵抗メモリ
US10839831B1 (en) 2019-12-30 2020-11-17 Western Digital Technologies, Inc. Dual writer designs with SOT and STT assisted recording
US11694713B2 (en) * 2020-02-12 2023-07-04 Western Digital Technologies, Inc. BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation
US11489108B2 (en) 2020-04-28 2022-11-01 Western Digital Technologies, Inc. BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation
US11100946B1 (en) 2020-07-01 2021-08-24 Western Digital Technologies, Inc. SOT differential reader and method of making same
US11222656B1 (en) 2020-07-09 2022-01-11 Western Digital Technologies, Inc. Method to reduce baseline shift for a SOT differential reader
US11094338B1 (en) 2020-07-09 2021-08-17 Western Digital Technologies, Inc. SOT film stack for differential reader

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