JP2024526786A5 - - Google Patents

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Publication number
JP2024526786A5
JP2024526786A5 JP2024502156A JP2024502156A JP2024526786A5 JP 2024526786 A5 JP2024526786 A5 JP 2024526786A5 JP 2024502156 A JP2024502156 A JP 2024502156A JP 2024502156 A JP2024502156 A JP 2024502156A JP 2024526786 A5 JP2024526786 A5 JP 2024526786A5
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JP
Japan
Prior art keywords
layer
alloy
ferromagnetic layer
seed layer
tunnel barrier
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JP2024502156A
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English (en)
Japanese (ja)
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JP2024526786A (ja
JP7731495B2 (ja
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Priority claimed from US17/472,019 external-priority patent/US12035634B2/en
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Publication of JP2024526786A publication Critical patent/JP2024526786A/ja
Publication of JP2024526786A5 publication Critical patent/JP2024526786A5/ja
Application granted granted Critical
Publication of JP7731495B2 publication Critical patent/JP7731495B2/ja
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JP2024502156A 2021-09-10 2022-05-08 改良されたシード層を有するトンネル磁気抵抗（ｔｍｒ）デバイス Active JP7731495B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/472,019 2021-09-10
US17/472,019 US12035634B2 (en) 2021-09-10 2021-09-10 Tunneling magnetoresistive (TMR) device with improved seed layer
PCT/US2022/028238 WO2023038680A1 (en) 2021-09-10 2022-05-08 Tunneling magnetoresistive (tmr) device with improved seed layer

Publications (3)

Publication Number Publication Date
JP2024526786A JP2024526786A (ja) 2024-07-19
JP2024526786A5 true JP2024526786A5 (https=) 2024-09-13
JP7731495B2 JP7731495B2 (ja) 2025-08-29

Family

ID=85478752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024502156A Active JP7731495B2 (ja) 2021-09-10 2022-05-08 改良されたシード層を有するトンネル磁気抵抗（ｔｍｒ）デバイス

Country Status (4)

Country Link
US (1) US12035634B2 (https=)
JP (1) JP7731495B2 (https=)
CN (1) CN117730640A (https=)
WO (1) WO2023038680A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12040114B2 (en) 2022-09-14 2024-07-16 Western Digital Technologies, Inc. Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) texture
US12207563B2 (en) * 2022-09-23 2025-01-21 Western Digital Technologies, Inc. Magnetoresistive devices comprising a synthetic antiferromagnetic coupling layer of RuAl having a (110) texture
US12482588B2 (en) * 2024-01-09 2025-11-25 Western Digital Technologies, Inc. Nitrogen doped oxides for lower bandgap

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6846543B2 (en) 1999-04-20 2005-01-25 Hitachi Global Storage Technologies Netherlands, B.V. Thin film magnetic recording disk with ruthenium-aluminum layer
US7035062B1 (en) 2001-11-29 2006-04-25 Seagate Technology Llc Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments
US6872478B2 (en) 2003-06-26 2005-03-29 Hitachi Global Storage Technologies Netherlands, B.V. Magnetic thin film media with a pre-seed layer of CrTiAl
JP4082711B2 (ja) * 2004-03-12 2008-04-30 独立行政法人科学技術振興機構 磁気抵抗素子及びその製造方法
US7360299B2 (en) * 2005-03-31 2008-04-22 Hitachi Global Storage Technologies Netherlands B. V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
US7497007B2 (en) * 2005-07-14 2009-03-03 Headway Technologies, Inc. Process of manufacturing a TMR device
US7859034B2 (en) 2005-09-20 2010-12-28 Grandis Inc. Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
US7780820B2 (en) * 2005-11-16 2010-08-24 Headway Technologies, Inc. Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
US8057925B2 (en) * 2008-03-27 2011-11-15 Magic Technologies, Inc. Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
JP2010212631A (ja) * 2009-03-12 2010-09-24 Fujitsu Ltd 磁気抵抗効果素子および磁気記憶装置
JP2011108320A (ja) * 2009-11-17 2011-06-02 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド及びその製造方法
US20130107616A1 (en) * 2010-07-09 2013-05-02 Hideo Ohno Magnetoresistive effect element and random access memory using same
US8564080B2 (en) * 2010-07-16 2013-10-22 Qualcomm Incorporated Magnetic storage element utilizing improved pinned layer stack
US20120299132A1 (en) 2011-05-27 2012-11-29 Hitachi Global Storage Technologies Netherlands B.V. Tunneling magnetoresistance (tmr) read sensor with low-contact-resistance interfaces
US20130001717A1 (en) * 2011-07-01 2013-01-03 Yuchen Zhou Perpendicular mram with mtj including laminated magnetic layers
KR20130008929A (ko) 2011-07-13 2013-01-23 에스케이하이닉스 주식회사 개선된 자성층의 두께 마진을 갖는 자기 메모리 디바이스
US8670217B1 (en) 2013-02-11 2014-03-11 HGST Netherlands B.V. Scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with free layers having shape anisotropy
KR102255436B1 (ko) * 2014-05-27 2021-05-24 한양대학교 산학협력단 자기터널접합 소자 및 그 제조방법
US9099124B1 (en) * 2014-09-28 2015-08-04 HGST Netherlands B.V. Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusion
JP6411186B2 (ja) * 2014-11-19 2018-10-24 株式会社東芝 磁気抵抗素子および磁気メモリ
KR102397904B1 (ko) 2015-09-17 2022-05-13 삼성전자주식회사 낮은 보론 농도를 갖는 영역 및 높은 보론 농도를 갖는 영역을 포함하는 자유 층, 자기 저항 셀, 및 자기 저항 메모리 소자, 및 그 제조 방법

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