JP7731495B2 - 改良されたシード層を有するトンネル磁気抵抗（ｔｍｒ）デバイス - Google Patents

改良されたシード層を有するトンネル磁気抵抗（ｔｍｒ）デバイス

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Publication number
JP7731495B2
JP7731495B2 JP2024502156A JP2024502156A JP7731495B2 JP 7731495 B2 JP7731495 B2 JP 7731495B2 JP 2024502156 A JP2024502156 A JP 2024502156A JP 2024502156 A JP2024502156 A JP 2024502156A JP 7731495 B2 JP7731495 B2 JP 7731495B2
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layer
alloy
ferromagnetic
seed layer
tmr
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JP2024526786A (ja
JP2024526786A5 (https=
Inventor
進 岡村
カイザー、クリスチャン
アール． ヨーク、ブライアン
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ウェスタン デジタル テクノロジーズ インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2024502156A 2021-09-10 2022-05-08 改良されたシード層を有するトンネル磁気抵抗（ｔｍｒ）デバイス Active JP7731495B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/472,019 2021-09-10
US17/472,019 US12035634B2 (en) 2021-09-10 2021-09-10 Tunneling magnetoresistive (TMR) device with improved seed layer
PCT/US2022/028238 WO2023038680A1 (en) 2021-09-10 2022-05-08 Tunneling magnetoresistive (tmr) device with improved seed layer

Publications (3)

Publication Number Publication Date
JP2024526786A JP2024526786A (ja) 2024-07-19
JP2024526786A5 JP2024526786A5 (https=) 2024-09-13
JP7731495B2 true JP7731495B2 (ja) 2025-08-29

Family

ID=85478752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024502156A Active JP7731495B2 (ja) 2021-09-10 2022-05-08 改良されたシード層を有するトンネル磁気抵抗（ｔｍｒ）デバイス

Country Status (4)

Country Link
US (1) US12035634B2 (https=)
JP (1) JP7731495B2 (https=)
CN (1) CN117730640A (https=)
WO (1) WO2023038680A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12040114B2 (en) 2022-09-14 2024-07-16 Western Digital Technologies, Inc. Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) texture
US12207563B2 (en) * 2022-09-23 2025-01-21 Western Digital Technologies, Inc. Magnetoresistive devices comprising a synthetic antiferromagnetic coupling layer of RuAl having a (110) texture
US12482588B2 (en) * 2024-01-09 2025-11-25 Western Digital Technologies, Inc. Nitrogen doped oxides for lower bandgap

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005088745A1 (ja) 2004-03-12 2005-09-22 Japan Science And Technology Agency 磁気抵抗素子及びその製造方法
JP2010212631A (ja) 2009-03-12 2010-09-24 Fujitsu Ltd 磁気抵抗効果素子および磁気記憶装置
JP2011108320A (ja) 2009-11-17 2011-06-02 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド及びその製造方法
US20130001717A1 (en) 2011-07-01 2013-01-03 Yuchen Zhou Perpendicular mram with mtj including laminated magnetic layers
JP2013534735A (ja) 2010-07-16 2013-09-05 クアルコム，インコーポレイテッド 改良されたピン層スタックを利用した磁気記憶素子
JP2016071925A (ja) 2014-09-28 2016-05-09 エイチジーエスティーネザーランドビーブイ ＭｇＯトンネル型バリア層およびホウ素の拡散を最少化する窒素含有層を含むトンネル型磁気抵抗（ＴＭＲ）素子
WO2016080373A1 (ja) 2014-11-19 2016-05-26 株式会社 東芝 磁気抵抗素子および磁気メモリ
US20170213957A1 (en) 2014-05-27 2017-07-27 Industry-University Cooperation Foundation Hanyang University Magnetic tunnel junction element and manufacturing method therefor

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US6846543B2 (en) 1999-04-20 2005-01-25 Hitachi Global Storage Technologies Netherlands, B.V. Thin film magnetic recording disk with ruthenium-aluminum layer
US7035062B1 (en) 2001-11-29 2006-04-25 Seagate Technology Llc Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments
US6872478B2 (en) 2003-06-26 2005-03-29 Hitachi Global Storage Technologies Netherlands, B.V. Magnetic thin film media with a pre-seed layer of CrTiAl
US7360299B2 (en) * 2005-03-31 2008-04-22 Hitachi Global Storage Technologies Netherlands B. V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
US7497007B2 (en) * 2005-07-14 2009-03-03 Headway Technologies, Inc. Process of manufacturing a TMR device
US7859034B2 (en) 2005-09-20 2010-12-28 Grandis Inc. Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
US7780820B2 (en) * 2005-11-16 2010-08-24 Headway Technologies, Inc. Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
US8057925B2 (en) * 2008-03-27 2011-11-15 Magic Technologies, Inc. Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
US20130107616A1 (en) * 2010-07-09 2013-05-02 Hideo Ohno Magnetoresistive effect element and random access memory using same
US20120299132A1 (en) 2011-05-27 2012-11-29 Hitachi Global Storage Technologies Netherlands B.V. Tunneling magnetoresistance (tmr) read sensor with low-contact-resistance interfaces
KR20130008929A (ko) 2011-07-13 2013-01-23 에스케이하이닉스 주식회사 개선된 자성층의 두께 마진을 갖는 자기 메모리 디바이스
US8670217B1 (en) 2013-02-11 2014-03-11 HGST Netherlands B.V. Scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with free layers having shape anisotropy
KR102397904B1 (ko) 2015-09-17 2022-05-13 삼성전자주식회사 낮은 보론 농도를 갖는 영역 및 높은 보론 농도를 갖는 영역을 포함하는 자유 층, 자기 저항 셀, 및 자기 저항 메모리 소자, 및 그 제조 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005088745A1 (ja) 2004-03-12 2005-09-22 Japan Science And Technology Agency 磁気抵抗素子及びその製造方法
JP2010212631A (ja) 2009-03-12 2010-09-24 Fujitsu Ltd 磁気抵抗効果素子および磁気記憶装置
JP2011108320A (ja) 2009-11-17 2011-06-02 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド及びその製造方法
JP2013534735A (ja) 2010-07-16 2013-09-05 クアルコム，インコーポレイテッド 改良されたピン層スタックを利用した磁気記憶素子
US20130001717A1 (en) 2011-07-01 2013-01-03 Yuchen Zhou Perpendicular mram with mtj including laminated magnetic layers
US20170213957A1 (en) 2014-05-27 2017-07-27 Industry-University Cooperation Foundation Hanyang University Magnetic tunnel junction element and manufacturing method therefor
JP2016071925A (ja) 2014-09-28 2016-05-09 エイチジーエスティーネザーランドビーブイ ＭｇＯトンネル型バリア層およびホウ素の拡散を最少化する窒素含有層を含むトンネル型磁気抵抗（ＴＭＲ）素子
WO2016080373A1 (ja) 2014-11-19 2016-05-26 株式会社 東芝 磁気抵抗素子および磁気メモリ

Also Published As

Publication number Publication date
US20230084970A1 (en) 2023-03-16
JP2024526786A (ja) 2024-07-19
US12035634B2 (en) 2024-07-09
CN117730640A (zh) 2024-03-19
WO2023038680A1 (en) 2023-03-16

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