CN117730640A - 具有改进的晶种层的隧穿磁阻（tmr）器件 - Google Patents

具有改进的晶种层的隧穿磁阻（tmr）器件 Download PDF

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Publication number
CN117730640A
CN117730640A CN202280049425.4A CN202280049425A CN117730640A CN 117730640 A CN117730640 A CN 117730640A CN 202280049425 A CN202280049425 A CN 202280049425A CN 117730640 A CN117730640 A CN 117730640A
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CN
China
Prior art keywords
layer
tmr
ferromagnetic
alloys
seed layer
Prior art date
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Pending
Application number
CN202280049425.4A
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English (en)
Chinese (zh)
Inventor
冈村进
C·凯撒
B·R·约克
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Western Digital Technologies Inc
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Western Digital Technologies Inc
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Publication of CN117730640A publication Critical patent/CN117730640A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN202280049425.4A 2021-09-10 2022-05-08 具有改进的晶种层的隧穿磁阻（tmr）器件 Pending CN117730640A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/472,019 2021-09-10
US17/472,019 US12035634B2 (en) 2021-09-10 2021-09-10 Tunneling magnetoresistive (TMR) device with improved seed layer
PCT/US2022/028238 WO2023038680A1 (en) 2021-09-10 2022-05-08 Tunneling magnetoresistive (tmr) device with improved seed layer

Publications (1)

Publication Number Publication Date
CN117730640A true CN117730640A (zh) 2024-03-19

Family

ID=85478752

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280049425.4A Pending CN117730640A (zh) 2021-09-10 2022-05-08 具有改进的晶种层的隧穿磁阻（tmr）器件

Country Status (4)

Country Link
US (1) US12035634B2 (https=)
JP (1) JP7731495B2 (https=)
CN (1) CN117730640A (https=)
WO (1) WO2023038680A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12040114B2 (en) 2022-09-14 2024-07-16 Western Digital Technologies, Inc. Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) texture
US12207563B2 (en) * 2022-09-23 2025-01-21 Western Digital Technologies, Inc. Magnetoresistive devices comprising a synthetic antiferromagnetic coupling layer of RuAl having a (110) texture
US12482588B2 (en) * 2024-01-09 2025-11-25 Western Digital Technologies, Inc. Nitrogen doped oxides for lower bandgap

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6846543B2 (en) 1999-04-20 2005-01-25 Hitachi Global Storage Technologies Netherlands, B.V. Thin film magnetic recording disk with ruthenium-aluminum layer
US7035062B1 (en) 2001-11-29 2006-04-25 Seagate Technology Llc Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments
US6872478B2 (en) 2003-06-26 2005-03-29 Hitachi Global Storage Technologies Netherlands, B.V. Magnetic thin film media with a pre-seed layer of CrTiAl
JP4082711B2 (ja) * 2004-03-12 2008-04-30 独立行政法人科学技術振興機構 磁気抵抗素子及びその製造方法
US7360299B2 (en) * 2005-03-31 2008-04-22 Hitachi Global Storage Technologies Netherlands B. V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
US7497007B2 (en) * 2005-07-14 2009-03-03 Headway Technologies, Inc. Process of manufacturing a TMR device
US7859034B2 (en) 2005-09-20 2010-12-28 Grandis Inc. Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
US7780820B2 (en) * 2005-11-16 2010-08-24 Headway Technologies, Inc. Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
US8057925B2 (en) * 2008-03-27 2011-11-15 Magic Technologies, Inc. Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
JP2010212631A (ja) * 2009-03-12 2010-09-24 Fujitsu Ltd 磁気抵抗効果素子および磁気記憶装置
JP2011108320A (ja) * 2009-11-17 2011-06-02 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド及びその製造方法
US20130107616A1 (en) * 2010-07-09 2013-05-02 Hideo Ohno Magnetoresistive effect element and random access memory using same
US8564080B2 (en) * 2010-07-16 2013-10-22 Qualcomm Incorporated Magnetic storage element utilizing improved pinned layer stack
US20120299132A1 (en) 2011-05-27 2012-11-29 Hitachi Global Storage Technologies Netherlands B.V. Tunneling magnetoresistance (tmr) read sensor with low-contact-resistance interfaces
US20130001717A1 (en) * 2011-07-01 2013-01-03 Yuchen Zhou Perpendicular mram with mtj including laminated magnetic layers
KR20130008929A (ko) 2011-07-13 2013-01-23 에스케이하이닉스 주식회사 개선된 자성층의 두께 마진을 갖는 자기 메모리 디바이스
US8670217B1 (en) 2013-02-11 2014-03-11 HGST Netherlands B.V. Scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with free layers having shape anisotropy
KR102255436B1 (ko) * 2014-05-27 2021-05-24 한양대학교 산학협력단 자기터널접합 소자 및 그 제조방법
US9099124B1 (en) * 2014-09-28 2015-08-04 HGST Netherlands B.V. Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusion
JP6411186B2 (ja) * 2014-11-19 2018-10-24 株式会社東芝 磁気抵抗素子および磁気メモリ
KR102397904B1 (ko) 2015-09-17 2022-05-13 삼성전자주식회사 낮은 보론 농도를 갖는 영역 및 높은 보론 농도를 갖는 영역을 포함하는 자유 층, 자기 저항 셀, 및 자기 저항 메모리 소자, 및 그 제조 방법

Also Published As

Publication number Publication date
US20230084970A1 (en) 2023-03-16
JP2024526786A (ja) 2024-07-19
US12035634B2 (en) 2024-07-09
JP7731495B2 (ja) 2025-08-29
WO2023038680A1 (en) 2023-03-16

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