JP7371256B2 - トポロジカルインシュレーターとして使用するためのビスマスアンチモン合金 - Google Patents
トポロジカルインシュレーターとして使用するためのビスマスアンチモン合金 Download PDFInfo
- Publication number
- JP7371256B2 JP7371256B2 JP2022529860A JP2022529860A JP7371256B2 JP 7371256 B2 JP7371256 B2 JP 7371256B2 JP 2022529860 A JP2022529860 A JP 2022529860A JP 2022529860 A JP2022529860 A JP 2022529860A JP 7371256 B2 JP7371256 B2 JP 7371256B2
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- Prior art keywords
- bisbe
- alloy layer
- layer
- bisb
- dopant element
- Prior art date
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
- H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0005—Arrangements, methods or circuits
- G11B2005/0024—Microwave assisted recording
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/917,334 | 2020-06-30 | ||
| US16/917,334 US11495741B2 (en) | 2020-06-30 | 2020-06-30 | Bismuth antimony alloys for use as topological insulators |
| PCT/US2020/066902 WO2022005518A1 (en) | 2020-06-30 | 2020-12-23 | Bismuth antimony alloys for use as topological insulators |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023508637A JP2023508637A (ja) | 2023-03-03 |
| JP2023508637A5 JP2023508637A5 (https=) | 2023-03-22 |
| JP7371256B2 true JP7371256B2 (ja) | 2023-10-30 |
Family
ID=79030390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022529860A Active JP7371256B2 (ja) | 2020-06-30 | 2020-12-23 | トポロジカルインシュレーターとして使用するためのビスマスアンチモン合金 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11495741B2 (https=) |
| EP (1) | EP4172784B1 (https=) |
| JP (1) | JP7371256B2 (https=) |
| CN (1) | CN114730286B (https=) |
| WO (1) | WO2022005518A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11694713B2 (en) * | 2020-02-12 | 2023-07-04 | Western Digital Technologies, Inc. | BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation |
| US11489108B2 (en) | 2020-04-28 | 2022-11-01 | Western Digital Technologies, Inc. | BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation |
| US11968905B2 (en) * | 2020-07-01 | 2024-04-23 | Northeastern University | Sputter deposited crystalline ordered topological insulator/ferromagnet (TI/FM) thin film heterostructures for spintronics applications |
| US11100946B1 (en) | 2020-07-01 | 2021-08-24 | Western Digital Technologies, Inc. | SOT differential reader and method of making same |
| US11094338B1 (en) | 2020-07-09 | 2021-08-17 | Western Digital Technologies, Inc. | SOT film stack for differential reader |
| US12178140B2 (en) | 2020-12-02 | 2024-12-24 | Northeastern University | Topological insulator/normal metal bilayers as spin hall materials for spin orbit torque devices, and methods of fabrication of same |
| US12156479B2 (en) * | 2021-01-04 | 2024-11-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory device and manufacturing method thereof |
| US11763973B2 (en) | 2021-08-13 | 2023-09-19 | Western Digital Technologies, Inc. | Buffer layers and interlayers that promote BiSbx (012) alloy orientation for SOT and MRAM devices |
| US11532323B1 (en) * | 2021-08-18 | 2022-12-20 | Western Digital Technologies, Inc. | BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices |
| JP7676650B2 (ja) | 2021-12-22 | 2025-05-14 | ウェスタン デジタル テクノロジーズ インコーポレーテッド | より平滑なＢｉＳｂ膜表面のために粒径を微細化するための新規なドーピングプロセス |
| US11875827B2 (en) | 2022-03-25 | 2024-01-16 | Western Digital Technologies, Inc. | SOT reader using BiSb topological insulator |
| US11783853B1 (en) | 2022-05-31 | 2023-10-10 | Western Digital Technologies, Inc. | Topological insulator based spin torque oscillator reader |
| US12106791B2 (en) | 2022-06-30 | 2024-10-01 | Western Digital Technologies, Inc. | Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices |
| US12154603B1 (en) | 2023-06-14 | 2024-11-26 | Western Digital Technologies, Inc. | Spin-orbit torque (SOT) writer with topological insulator materials |
| US12354627B2 (en) | 2023-06-28 | 2025-07-08 | Western Digital Technologies, Inc. | Higher areal density non-local spin orbit torque (SOT) writer with topological insulator materials |
Citations (5)
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|---|---|---|---|---|
| US20170288666A1 (en) | 2016-03-31 | 2017-10-05 | University Of Iowa Research Foundation | Voltage-controlled magnetic-based devices having topological insulator/magnetic insulator heterostructure |
| WO2019054484A1 (ja) | 2017-09-15 | 2019-03-21 | 国立大学法人東京工業大学 | 磁性体とＢｉＳｂの積層構造の製造方法、磁気抵抗メモリ、純スピン注入源 |
| JP2019165099A (ja) | 2018-03-19 | 2019-09-26 | 株式会社東芝 | 磁気記憶装置 |
| WO2020050329A1 (ja) | 2018-09-05 | 2020-03-12 | 学校法人慶應義塾 | スピントロニクスデバイス、磁気メモリ及び電子機器 |
| US20200168664A1 (en) | 2018-11-23 | 2020-05-28 | Samsung Electronics Co., Ltd. | Magnetic memory devices and methods of fabricating the same |
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| KR102604743B1 (ko) * | 2018-12-11 | 2023-11-22 | 삼성전자주식회사 | 자기 메모리 장치 |
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| US11489108B2 (en) | 2020-04-28 | 2022-11-01 | Western Digital Technologies, Inc. | BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation |
| US11100946B1 (en) | 2020-07-01 | 2021-08-24 | Western Digital Technologies, Inc. | SOT differential reader and method of making same |
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-
2020
- 2020-06-30 US US16/917,334 patent/US11495741B2/en active Active
- 2020-12-23 CN CN202080080281.XA patent/CN114730286B/zh active Active
- 2020-12-23 JP JP2022529860A patent/JP7371256B2/ja active Active
- 2020-12-23 WO PCT/US2020/066902 patent/WO2022005518A1/en not_active Ceased
- 2020-12-23 EP EP20942544.6A patent/EP4172784B1/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170288666A1 (en) | 2016-03-31 | 2017-10-05 | University Of Iowa Research Foundation | Voltage-controlled magnetic-based devices having topological insulator/magnetic insulator heterostructure |
| WO2019054484A1 (ja) | 2017-09-15 | 2019-03-21 | 国立大学法人東京工業大学 | 磁性体とＢｉＳｂの積層構造の製造方法、磁気抵抗メモリ、純スピン注入源 |
| JP2019165099A (ja) | 2018-03-19 | 2019-09-26 | 株式会社東芝 | 磁気記憶装置 |
| WO2020050329A1 (ja) | 2018-09-05 | 2020-03-12 | 学校法人慶應義塾 | スピントロニクスデバイス、磁気メモリ及び電子機器 |
| US20200168664A1 (en) | 2018-11-23 | 2020-05-28 | Samsung Electronics Co., Ltd. | Magnetic memory devices and methods of fabricating the same |
Non-Patent Citations (1)
| Title |
|---|
| ファム ナムハイ，BiSbトポロジカル絶縁体を用いる超高性能純スピン流源，応用物理学会秋季学術講演会講演予稿集（ＣＤ－ＲＯＭ），日本，2019年09月04日，Vol.80,No.19p-N302-9，p.100000001-112 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114730286B (zh) | 2025-08-19 |
| EP4172784B1 (en) | 2025-04-02 |
| US11495741B2 (en) | 2022-11-08 |
| CN114730286A (zh) | 2022-07-08 |
| EP4172784A4 (en) | 2023-12-13 |
| EP4172784A1 (en) | 2023-05-03 |
| WO2022005518A1 (en) | 2022-01-06 |
| JP2023508637A (ja) | 2023-03-03 |
| US20210408370A1 (en) | 2021-12-30 |
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