JP2022527552A5 - - Google Patents

Info

Publication number
JP2022527552A5
JP2022527552A5 JP2021559229A JP2021559229A JP2022527552A5 JP 2022527552 A5 JP2022527552 A5 JP 2022527552A5 JP 2021559229 A JP2021559229 A JP 2021559229A JP 2021559229 A JP2021559229 A JP 2021559229A JP 2022527552 A5 JP2022527552 A5 JP 2022527552A5
Authority
JP
Japan
Prior art keywords
gas
plasma
excited
passivation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021559229A
Other languages
English (en)
Japanese (ja)
Other versions
JP7545185B2 (ja
JP2022527552A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2020/024446 external-priority patent/WO2020205335A1/en
Publication of JP2022527552A publication Critical patent/JP2022527552A/ja
Publication of JP2022527552A5 publication Critical patent/JP2022527552A5/ja
Application granted granted Critical
Publication of JP7545185B2 publication Critical patent/JP7545185B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021559229A 2019-04-05 2020-03-24 高度に選択的な酸化ケイ素／窒化ケイ素エッチングのためのエッチング成分及び不動態化ガス成分の独立した制御 Active JP7545185B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962830223P 2019-04-05 2019-04-05
US62/830,223 2019-04-05
PCT/US2020/024446 WO2020205335A1 (en) 2019-04-05 2020-03-24 Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching

Publications (3)

Publication Number Publication Date
JP2022527552A JP2022527552A (ja) 2022-06-02
JP2022527552A5 true JP2022527552A5 (https=) 2023-01-26
JP7545185B2 JP7545185B2 (ja) 2024-09-04

Family

ID=72661996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021559229A Active JP7545185B2 (ja) 2019-04-05 2020-03-24 高度に選択的な酸化ケイ素／窒化ケイ素エッチングのためのエッチング成分及び不動態化ガス成分の独立した制御

Country Status (6)

Country Link
US (1) US11024508B2 (https=)
JP (1) JP7545185B2 (https=)
KR (1) KR102799165B1 (https=)
CN (1) CN113632208B (https=)
TW (1) TWI874377B (https=)
WO (1) WO2020205335A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020167765A1 (en) * 2019-02-14 2020-08-20 Lam Research Corporation Selective etch using a sacrificial mask
TWI888525B (zh) * 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
EP4219405B1 (en) 2020-10-14 2025-12-31 LG Energy Solution, Ltd. METHOD FOR MANUFACTURING A HIGH-NICKEL POSITIVE ELECTRODE ACTIVE MATERIAL
US20230268192A1 (en) * 2021-06-15 2023-08-24 Lam Research Corporation In-situ hydrocarbon-based layer for non-conformal passivation of partially etched structures
KR20240100436A (ko) * 2021-11-16 2024-07-01 램 리써치 코포레이션 유기 클로라이드를 사용한 실리콘 에칭
CN114664653B (zh) * 2022-03-15 2025-04-11 浙江大学 一种氮化硅刻蚀方法
WO2024123556A1 (en) * 2022-12-07 2024-06-13 Lam Research Corporation Etch with sulfur based oxygen free passivant
KR20250162513A (ko) * 2023-03-17 2025-11-18 가부시키가이샤 코쿠사이 엘렉트릭 에칭 방법, 반도체 장치의 제조 방법, 처리 장치 및 프로그램
KR20250094305A (ko) * 2023-12-18 2025-06-25 주식회사 원익아이피에스 기판 처리 방법

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4324611A (en) 1980-06-26 1982-04-13 Branson International Plasma Corporation Process and gas mixture for etching silicon dioxide and silicon nitride
JPH07118474B2 (ja) * 1984-12-17 1995-12-18 ソニー株式会社 エツチングガス及びこれを用いたエツチング方法
US5286344A (en) 1992-06-15 1994-02-15 Micron Technology, Inc. Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride
JP3252518B2 (ja) * 1993-03-19 2002-02-04 ソニー株式会社 ドライエッチング方法
JPH07106308A (ja) * 1993-10-08 1995-04-21 Sony Corp ドライエッチング方法
US5505816A (en) * 1993-12-16 1996-04-09 International Business Machines Corporation Etching of silicon dioxide selectively to silicon nitride and polysilicon
JPH0982688A (ja) * 1995-09-19 1997-03-28 Sony Corp ドライエッチング方法
US6277720B1 (en) * 1997-06-30 2001-08-21 Texas Instruments Incorporated Silicon nitride dopant diffusion barrier in integrated circuits
JP2985841B2 (ja) * 1997-08-22 1999-12-06 日本電気株式会社 半導体装置の製造方法
US6387819B1 (en) * 1998-04-29 2002-05-14 Applied Materials, Inc. Method for etching low K dielectric layers
JP2000040691A (ja) * 1998-07-21 2000-02-08 Oki Electric Ind Co Ltd 半導体装置製造方法
US6803318B1 (en) * 2000-09-14 2004-10-12 Cypress Semiconductor Corp. Method of forming self aligned contacts
WO2005024957A1 (ja) * 2003-08-29 2005-03-17 Fujitsu Limited 半導体装置とその製造方法
US7393788B2 (en) * 2006-02-10 2008-07-01 Cook Julie A Method and system for selectively etching a dielectric material relative to silicon
KR102002815B1 (ko) * 2012-09-05 2019-07-23 삼성전자주식회사 반도체 장치 및 이의 제조 방법
JP2014209515A (ja) * 2013-04-16 2014-11-06 東京エレクトロン株式会社 エッチング方法
TW201525173A (zh) * 2013-12-09 2015-07-01 應用材料股份有限公司 選擇性層沉積之方法
JP6059165B2 (ja) * 2014-02-19 2017-01-11 東京エレクトロン株式会社 エッチング方法、及びプラズマ処理装置
US9412605B2 (en) * 2014-08-07 2016-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method of removing oxide on semiconductor surface by layer of sulfur
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
US9633867B2 (en) * 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
JP2016157793A (ja) * 2015-02-24 2016-09-01 東京エレクトロン株式会社 エッチング方法
US9852923B2 (en) * 2015-04-02 2017-12-26 Applied Materials, Inc. Mask etch for patterning
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
JP6592400B2 (ja) 2016-05-19 2019-10-16 東京エレクトロン株式会社 エッチング方法
JP6606464B2 (ja) 2016-05-20 2019-11-13 東京エレクトロン株式会社 エッチング方法
US10629449B2 (en) * 2016-10-13 2020-04-21 Kanto Denka Kogyo Co., Ltd. Gas composition for dry etching and dry etching method
US10446407B2 (en) * 2017-01-18 2019-10-15 Tokyo Electron Limited Method of preferential silicon nitride etching using sulfur hexafluoride
US10276398B2 (en) * 2017-08-02 2019-04-30 Lam Research Corporation High aspect ratio selective lateral etch using cyclic passivation and etching
US11075084B2 (en) * 2017-08-31 2021-07-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Chemistries for etching multi-stacked layers

Similar Documents

Publication Publication Date Title
JP2022527552A5 (https=)
CN113632208B (zh) 用于高度选择性氧化硅/氮化硅蚀刻的蚀刻和钝化气体组分的独立控制
JP2024506618A5 (https=)
CN113785383B (zh) 通过选择性氮化硼或氮化铝沉积的高度选择性氧化硅/氮化硅蚀刻
US10283369B2 (en) Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
JP7144324B2 (ja) プラズマ処理方法
JP7332961B2 (ja) ドライエッチング方法
JP2022537347A5 (https=)
JP2015523734A (ja) 低ｋ誘電体膜をパターニングする方法
KR102812547B1 (ko) 실리콘-게르마늄 층의 기상 선택적 식각을 위한 신규한 방법
KR20260046253A (ko) 나노와이어들을 위한 선택적인 에칭
JP2024542631A5 (https=)
US20230367068A1 (en) Integrated optical devices and methods of forming the same
JP2024505507A5 (https=)
JPH10321838A (ja) 半導体装置の製造方法
KR102599015B1 (ko) 기판 처리 방법
US20060081917A1 (en) Method for forming a hard mask for gate electrode patterning and corresponding device
JPWO2023017696A5 (https=)
KR960019606A (ko) 반도체 소자의 폴리사이드 게이트 전극 형성 방법