JP6592400B2 - エッチング方法 - Google Patents
エッチング方法 Download PDFInfo
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- JP6592400B2 JP6592400B2 JP2016100603A JP2016100603A JP6592400B2 JP 6592400 B2 JP6592400 B2 JP 6592400B2 JP 2016100603 A JP2016100603 A JP 2016100603A JP 2016100603 A JP2016100603 A JP 2016100603A JP 6592400 B2 JP6592400 B2 JP 6592400B2
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- 238000000034 method Methods 0.000 title claims description 126
- 238000005530 etching Methods 0.000 title claims description 51
- 239000007789 gas Substances 0.000 claims description 201
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 33
- 239000001301 oxygen Substances 0.000 claims description 33
- 229910052760 oxygen Inorganic materials 0.000 claims description 33
- 239000011261 inert gas Substances 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 238000009832 plasma treatment Methods 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 11
- 229910001882 dioxygen Inorganic materials 0.000 description 11
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 8
- 230000006641 stabilisation Effects 0.000 description 7
- 238000011105 stabilization Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 238000007790 scraping Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 101000911772 Homo sapiens Hsc70-interacting protein Proteins 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- PRPAGESBURMWTI-UHFFFAOYSA-N [C].[F] Chemical compound [C].[F] PRPAGESBURMWTI-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
処理容器内圧力:10mTorr(1.33Pa)〜50mTorr(6.65Pa)
処理ガス
・C4F8ガス:10sccm〜30sccm
・CF4ガス:150sccm〜300sccm
・Arガス:200sccm〜500sccm
プラズマ生成用の高周波電力:300W〜1000W
高周波バイアス電力:200W〜500W
処理容器内圧力:50mTorr(6.65Pa)〜200mTorr(26.6Pa)
処理ガス
・N2ガス:200sccm〜400sccm
・H2ガス:200sccm〜400sccm
プラズマ生成用の高周波電力:500W〜2000W
高周波バイアス電力:200W〜500W
処理容器内圧力:10mTorr(1.33Pa)〜50mTorr(6.65Pa)
処理ガス
・C4F8ガス:10sccm〜30sccm
・CF4ガス:50sccm〜150sccm
・Arガス:500sccm〜1000sccm
・O2ガス:10sccm〜30sccm
プラズマ生成用の高周波電力:500W〜2000W
高周波バイアス電力:500W〜2000W
処理容器内圧力:30mTorr(3.99Pa)〜200mTorr(26.6Pa)
処理ガス
・O2ガス:50sccm〜500sccm
・Arガス:200sccm〜1500sccm
プラズマ生成用の高周波電力:100W〜500W
高周波バイアス電力:0W〜200W
処理容器内圧力:10mTorr(1.33Pa)〜50mTorr(6.65Pa)
処理ガス
・C4F6ガス流量:1sccm〜20sccm
・Arガス流量:200sccm〜1500sccm
・O2ガス流量:1sccm〜20sccm
・第1の高周波電源62の高周波電力:40MHz、50W〜500W
第2の高周波電源64の高周波バイアス電力:13MHz、0W〜50W
電源70の直流電圧:0V〜−500V
処理容器内圧力:10mTorr(1.33Pa)〜50mTorr(6.65Pa)
処理ガス
・Arガス:200sccm〜1500sccm
第1の高周波電源62の高周波電力:40MHz、50W〜500W
第2の高周波電源64の高周波バイアス電力:13MHz、0W〜50W
電源70の直流電圧:0V〜−500V
Claims (2)
- 被処理体に対するプラズマ処理によって、酸化シリコンから構成された第1領域を窒化シリコンから構成された第2領域に対して選択的にエッチングする方法であって、
前記被処理体は、凹部を画成する前記第2領域、該凹部を埋め、且つ前記第2領域を覆うように設けられた前記第1領域、及び、前記第1領域上に設けられたマスクを有し、該マスクは、前記凹部の上に該凹部の幅よりも広い幅を有する開口を提供し、
該方法は、
前記被処理体を収容した処理容器内においてフルオロカーボンガス、酸素含有ガス及び不活性ガスを含む処理ガスのプラズマを生成する第1工程であり、前記被処理体上にフルオロカーボンを含む堆積物を形成する、該第1工程と、
前記堆積物に含まれるフルオロカーボンのラジカルによって前記第1領域をエッチングする第2工程と、を含み、
前記第1工程及び前記第2工程を含むシーケンスが繰り返して実行され、
前記シーケンスの前に、前記第1領域は、前記第2領域が露出する直前までエッチングされるエッチング方法。 - 前記第2工程のエッチングは、実質的に酸素を含まない処理ガスによって行われる請求項1に記載のエッチング方法。
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TW106115532A TWI722187B (zh) | 2016-05-19 | 2017-05-11 | 蝕刻方法 |
CN201780030915.9A CN109196624B (zh) | 2016-05-19 | 2017-05-16 | 蚀刻方法 |
US16/069,995 US20190027372A1 (en) | 2016-05-19 | 2017-05-16 | Etching method |
PCT/JP2017/018340 WO2017199946A1 (ja) | 2016-05-19 | 2017-05-16 | エッチング方法 |
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