JP2024542631A5 - - Google Patents

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Publication number
JP2024542631A5
JP2024542631A5 JP2024532154A JP2024532154A JP2024542631A5 JP 2024542631 A5 JP2024542631 A5 JP 2024542631A5 JP 2024532154 A JP2024532154 A JP 2024532154A JP 2024532154 A JP2024532154 A JP 2024532154A JP 2024542631 A5 JP2024542631 A5 JP 2024542631A5
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JP
Japan
Prior art keywords
gas
etching
plasma
excited
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024532154A
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English (en)
Japanese (ja)
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JP2024542631A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2022/052015 external-priority patent/WO2023107492A1/en
Publication of JP2024542631A publication Critical patent/JP2024542631A/ja
Publication of JP2024542631A5 publication Critical patent/JP2024542631A5/ja
Pending legal-status Critical Current

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JP2024532154A 2021-12-08 2022-12-06 モリブデンをエッチングする方法 Pending JP2024542631A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163287371P 2021-12-08 2021-12-08
US63/287,371 2021-12-08
PCT/US2022/052015 WO2023107492A1 (en) 2021-12-08 2022-12-06 Methods for etching molybdenum

Publications (2)

Publication Number Publication Date
JP2024542631A JP2024542631A (ja) 2024-11-15
JP2024542631A5 true JP2024542631A5 (https=) 2025-09-12

Family

ID=86731106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024532154A Pending JP2024542631A (ja) 2021-12-08 2022-12-06 モリブデンをエッチングする方法

Country Status (5)

Country Link
US (1) US20240186149A1 (https=)
JP (1) JP2024542631A (https=)
KR (1) KR20240113753A (https=)
TW (1) TW202338066A (https=)
WO (1) WO2023107492A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250210374A1 (en) * 2023-12-20 2025-06-26 Tokyo Electron Limited Methods and structures for improving etch profile of metallic layer
WO2026024831A1 (en) * 2024-07-25 2026-01-29 Lam Research Corporation Microfabrication of low-resistance molybdenum interconnects
US20260086465A1 (en) * 2024-09-21 2026-03-26 Applied Materials, Inc. Sulfur based resist hardening

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5100505A (en) * 1990-10-18 1992-03-31 Micron Technology, Inc. Process for etching semiconductor devices
JPH0613348A (ja) * 1992-06-25 1994-01-21 Seiko Epson Corp 半導体装置の製造方法
JP5250476B2 (ja) * 2009-05-11 2013-07-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
CN102417156B (zh) * 2011-11-15 2015-02-04 苏州含光微纳科技有限公司 一种刻蚀金属钼材料的方法
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10692880B2 (en) * 2016-12-27 2020-06-23 Applied Materials, Inc. 3D NAND high aspect ratio structure etch
US10269559B2 (en) * 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
CN112640064A (zh) * 2018-08-24 2021-04-09 朗姆研究公司 用于高深宽比蚀刻的含金属钝化
JP7728778B2 (ja) * 2020-03-06 2025-08-25 ラム リサーチ コーポレーション モリブデンの原子層エッチング
US11322364B2 (en) * 2020-04-01 2022-05-03 Tokyo Electron Limited Method of patterning a metal film with improved sidewall roughness

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