TW202338066A - 鉬的蝕刻方法 - Google Patents

鉬的蝕刻方法 Download PDF

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Publication number
TW202338066A
TW202338066A TW111146930A TW111146930A TW202338066A TW 202338066 A TW202338066 A TW 202338066A TW 111146930 A TW111146930 A TW 111146930A TW 111146930 A TW111146930 A TW 111146930A TW 202338066 A TW202338066 A TW 202338066A
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TW
Taiwan
Prior art keywords
etch
substrate
layer
gas
plasma
Prior art date
Application number
TW111146930A
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English (en)
Chinese (zh)
Inventor
蘊 韓
彼得 洛威爾 喬治 凡特薩克
帕索斯 羅伯托 隆戈
艾洛克 蘭傑
Original Assignee
日商東京威力科創股份有限公司
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Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202338066A publication Critical patent/TW202338066A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
TW111146930A 2021-12-08 2022-12-07 鉬的蝕刻方法 TW202338066A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163287371P 2021-12-08 2021-12-08
US63/287,371 2021-12-08

Publications (1)

Publication Number Publication Date
TW202338066A true TW202338066A (zh) 2023-10-01

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ID=86731106

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111146930A TW202338066A (zh) 2021-12-08 2022-12-07 鉬的蝕刻方法

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US (1) US20240186149A1 (https=)
JP (1) JP2024542631A (https=)
KR (1) KR20240113753A (https=)
TW (1) TW202338066A (https=)
WO (1) WO2023107492A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250210374A1 (en) * 2023-12-20 2025-06-26 Tokyo Electron Limited Methods and structures for improving etch profile of metallic layer
WO2026024831A1 (en) * 2024-07-25 2026-01-29 Lam Research Corporation Microfabrication of low-resistance molybdenum interconnects
US20260086465A1 (en) * 2024-09-21 2026-03-26 Applied Materials, Inc. Sulfur based resist hardening

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5100505A (en) * 1990-10-18 1992-03-31 Micron Technology, Inc. Process for etching semiconductor devices
JPH0613348A (ja) * 1992-06-25 1994-01-21 Seiko Epson Corp 半導体装置の製造方法
JP5250476B2 (ja) * 2009-05-11 2013-07-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
CN102417156B (zh) * 2011-11-15 2015-02-04 苏州含光微纳科技有限公司 一种刻蚀金属钼材料的方法
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10692880B2 (en) * 2016-12-27 2020-06-23 Applied Materials, Inc. 3D NAND high aspect ratio structure etch
US10269559B2 (en) * 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
CN112640064A (zh) * 2018-08-24 2021-04-09 朗姆研究公司 用于高深宽比蚀刻的含金属钝化
JP7728778B2 (ja) * 2020-03-06 2025-08-25 ラム リサーチ コーポレーション モリブデンの原子層エッチング
US11322364B2 (en) * 2020-04-01 2022-05-03 Tokyo Electron Limited Method of patterning a metal film with improved sidewall roughness

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Publication number Publication date
JP2024542631A (ja) 2024-11-15
WO2023107492A1 (en) 2023-06-15
US20240186149A1 (en) 2024-06-06
KR20240113753A (ko) 2024-07-23

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