WO2023107492A1 - Methods for etching molybdenum - Google Patents

Methods for etching molybdenum Download PDF

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Publication number
WO2023107492A1
WO2023107492A1 PCT/US2022/052015 US2022052015W WO2023107492A1 WO 2023107492 A1 WO2023107492 A1 WO 2023107492A1 US 2022052015 W US2022052015 W US 2022052015W WO 2023107492 A1 WO2023107492 A1 WO 2023107492A1
Authority
WO
WIPO (PCT)
Prior art keywords
etch
substrate
gas
plasma
exposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2022/052015
Other languages
English (en)
French (fr)
Inventor
Yun Han
Peter Ventzek
Roberto Longo PAZOS
Alok RANJAN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
Original Assignee
Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron US Holdings Inc filed Critical Tokyo Electron Ltd
Priority to JP2024532154A priority Critical patent/JP2024542631A/ja
Priority to KR1020247014185A priority patent/KR20240113753A/ko
Publication of WO2023107492A1 publication Critical patent/WO2023107492A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials

Definitions

  • a minimum half-pitch (critical dimension) in the patterned photoresist layer may be from about 5 nm to about 15 nm.
  • Examples of hardmask material include silicon oxide, silicon nitride, titanium nitride, and the like, or a combination of multiple layers.
  • the patterned hardmask layer 118 may be omitted from the etch mask 122.
  • the etch protection layer may form conformally over the entire exposed surface of the substrate, including the horizontal surface of the metallic molybdenum layer.
  • the breakthrough etch step (box 408) may not be an optional step.
  • the other steps in the ALD- based cyclic etch technique 400 have been described above in the context of the gas pulsing cyclic etch technique 300 with reference to Figures 3A-3F.
  • FIG. 5 illustrates a flowchart for one cycle 500 of a cyclic etch process, such as the gas pulsing cycle 312 (of the gas pulsing cyclic etch technique 300) and the deposition-etch cycle 412 (of the ALD-based cyclic etch technique 400).

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
PCT/US2022/052015 2021-12-08 2022-12-06 Methods for etching molybdenum Ceased WO2023107492A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024532154A JP2024542631A (ja) 2021-12-08 2022-12-06 モリブデンをエッチングする方法
KR1020247014185A KR20240113753A (ko) 2021-12-08 2022-12-06 몰리브덴 에칭 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163287371P 2021-12-08 2021-12-08
US63/287,371 2021-12-08

Publications (1)

Publication Number Publication Date
WO2023107492A1 true WO2023107492A1 (en) 2023-06-15

Family

ID=86731106

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2022/052015 Ceased WO2023107492A1 (en) 2021-12-08 2022-12-06 Methods for etching molybdenum

Country Status (5)

Country Link
US (1) US20240186149A1 (https=)
JP (1) JP2024542631A (https=)
KR (1) KR20240113753A (https=)
TW (1) TW202338066A (https=)
WO (1) WO2023107492A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025136487A1 (en) * 2023-12-20 2025-06-26 Tokyo Electron Limited Methods and structures for improving etch profile of metallic layer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026024831A1 (en) * 2024-07-25 2026-01-29 Lam Research Corporation Microfabrication of low-resistance molybdenum interconnects
US20260086465A1 (en) * 2024-09-21 2026-03-26 Applied Materials, Inc. Sulfur based resist hardening

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102417156A (zh) * 2011-11-15 2012-04-18 北京大学 一种刻蚀金属钼材料的方法
US20180182777A1 (en) * 2016-12-27 2018-06-28 Applied Materials, Inc. 3d nand high aspect ratio structure etch
US20190080903A1 (en) * 2017-09-13 2019-03-14 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US20210242032A1 (en) * 2018-08-24 2021-08-05 Lam Research Corporation Metal-containing passivation for high aspect ratio etch
WO2021178399A1 (en) * 2020-03-06 2021-09-10 Lam Research Corporation Atomic layer etching of molybdenum

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5100505A (en) * 1990-10-18 1992-03-31 Micron Technology, Inc. Process for etching semiconductor devices
JPH0613348A (ja) * 1992-06-25 1994-01-21 Seiko Epson Corp 半導体装置の製造方法
JP5250476B2 (ja) * 2009-05-11 2013-07-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
US11322364B2 (en) * 2020-04-01 2022-05-03 Tokyo Electron Limited Method of patterning a metal film with improved sidewall roughness

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102417156A (zh) * 2011-11-15 2012-04-18 北京大学 一种刻蚀金属钼材料的方法
US20180182777A1 (en) * 2016-12-27 2018-06-28 Applied Materials, Inc. 3d nand high aspect ratio structure etch
US20190080903A1 (en) * 2017-09-13 2019-03-14 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US20210242032A1 (en) * 2018-08-24 2021-08-05 Lam Research Corporation Metal-containing passivation for high aspect ratio etch
WO2021178399A1 (en) * 2020-03-06 2021-09-10 Lam Research Corporation Atomic layer etching of molybdenum

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025136487A1 (en) * 2023-12-20 2025-06-26 Tokyo Electron Limited Methods and structures for improving etch profile of metallic layer

Also Published As

Publication number Publication date
JP2024542631A (ja) 2024-11-15
US20240186149A1 (en) 2024-06-06
TW202338066A (zh) 2023-10-01
KR20240113753A (ko) 2024-07-23

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