KR20240113753A - 몰리브덴 에칭 방법 - Google Patents

몰리브덴 에칭 방법 Download PDF

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Publication number
KR20240113753A
KR20240113753A KR1020247014185A KR20247014185A KR20240113753A KR 20240113753 A KR20240113753 A KR 20240113753A KR 1020247014185 A KR1020247014185 A KR 1020247014185A KR 20247014185 A KR20247014185 A KR 20247014185A KR 20240113753 A KR20240113753 A KR 20240113753A
Authority
KR
South Korea
Prior art keywords
etch
substrate
gas
layer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247014185A
Other languages
English (en)
Korean (ko)
Inventor
윤 한
피터 벤트젝
로베르토 롱고 파조스
알록 란잔
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20240113753A publication Critical patent/KR20240113753A/ko
Pending legal-status Critical Current

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Classifications

    • H01L21/32136—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H01L21/32139—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
KR1020247014185A 2021-12-08 2022-12-06 몰리브덴 에칭 방법 Pending KR20240113753A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163287371P 2021-12-08 2021-12-08
US63/287,371 2021-12-08
PCT/US2022/052015 WO2023107492A1 (en) 2021-12-08 2022-12-06 Methods for etching molybdenum

Publications (1)

Publication Number Publication Date
KR20240113753A true KR20240113753A (ko) 2024-07-23

Family

ID=86731106

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247014185A Pending KR20240113753A (ko) 2021-12-08 2022-12-06 몰리브덴 에칭 방법

Country Status (5)

Country Link
US (1) US20240186149A1 (https=)
JP (1) JP2024542631A (https=)
KR (1) KR20240113753A (https=)
TW (1) TW202338066A (https=)
WO (1) WO2023107492A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250210374A1 (en) * 2023-12-20 2025-06-26 Tokyo Electron Limited Methods and structures for improving etch profile of metallic layer
WO2026024831A1 (en) * 2024-07-25 2026-01-29 Lam Research Corporation Microfabrication of low-resistance molybdenum interconnects
US20260086465A1 (en) * 2024-09-21 2026-03-26 Applied Materials, Inc. Sulfur based resist hardening

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5100505A (en) * 1990-10-18 1992-03-31 Micron Technology, Inc. Process for etching semiconductor devices
JPH0613348A (ja) * 1992-06-25 1994-01-21 Seiko Epson Corp 半導体装置の製造方法
JP5250476B2 (ja) * 2009-05-11 2013-07-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
CN102417156B (zh) * 2011-11-15 2015-02-04 苏州含光微纳科技有限公司 一种刻蚀金属钼材料的方法
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10692880B2 (en) * 2016-12-27 2020-06-23 Applied Materials, Inc. 3D NAND high aspect ratio structure etch
US10269559B2 (en) * 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
CN112640064A (zh) * 2018-08-24 2021-04-09 朗姆研究公司 用于高深宽比蚀刻的含金属钝化
JP7728778B2 (ja) * 2020-03-06 2025-08-25 ラム リサーチ コーポレーション モリブデンの原子層エッチング
US11322364B2 (en) * 2020-04-01 2022-05-03 Tokyo Electron Limited Method of patterning a metal film with improved sidewall roughness

Also Published As

Publication number Publication date
JP2024542631A (ja) 2024-11-15
WO2023107492A1 (en) 2023-06-15
US20240186149A1 (en) 2024-06-06
TW202338066A (zh) 2023-10-01

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