JP2024542631A - モリブデンをエッチングする方法 - Google Patents

モリブデンをエッチングする方法 Download PDF

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Publication number
JP2024542631A
JP2024542631A JP2024532154A JP2024532154A JP2024542631A JP 2024542631 A JP2024542631 A JP 2024542631A JP 2024532154 A JP2024532154 A JP 2024532154A JP 2024532154 A JP2024532154 A JP 2024532154A JP 2024542631 A JP2024542631 A JP 2024542631A
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JP
Japan
Prior art keywords
etch
gas
substrate
etching
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2024532154A
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English (en)
Japanese (ja)
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JP2024542631A5 (https=
Inventor
ハン，ユン
ヴェンツェク，ピーター
ロンゴ パソス，ロベルト
ランジャン，アロック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
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Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
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Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron US Holdings Inc filed Critical Tokyo Electron Ltd
Publication of JP2024542631A publication Critical patent/JP2024542631A/ja
Publication of JP2024542631A5 publication Critical patent/JP2024542631A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2024532154A 2021-12-08 2022-12-06 モリブデンをエッチングする方法 Pending JP2024542631A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163287371P 2021-12-08 2021-12-08
US63/287,371 2021-12-08
PCT/US2022/052015 WO2023107492A1 (en) 2021-12-08 2022-12-06 Methods for etching molybdenum

Publications (2)

Publication Number Publication Date
JP2024542631A true JP2024542631A (ja) 2024-11-15
JP2024542631A5 JP2024542631A5 (https=) 2025-09-12

Family

ID=86731106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024532154A Pending JP2024542631A (ja) 2021-12-08 2022-12-06 モリブデンをエッチングする方法

Country Status (5)

Country Link
US (1) US20240186149A1 (https=)
JP (1) JP2024542631A (https=)
KR (1) KR20240113753A (https=)
TW (1) TW202338066A (https=)
WO (1) WO2023107492A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250210374A1 (en) * 2023-12-20 2025-06-26 Tokyo Electron Limited Methods and structures for improving etch profile of metallic layer
WO2026024831A1 (en) * 2024-07-25 2026-01-29 Lam Research Corporation Microfabrication of low-resistance molybdenum interconnects
US20260086465A1 (en) * 2024-09-21 2026-03-26 Applied Materials, Inc. Sulfur based resist hardening

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02105413A (ja) * 1988-10-14 1990-04-18 Hitachi Ltd プラズマエッチング処理方法
JPH05102090A (ja) * 1990-10-18 1993-04-23 Micron Technol Inc 半導体デバイスのエツチング方法およびエツチング物質
JPH0613348A (ja) * 1992-06-25 1994-01-21 Seiko Epson Corp 半導体装置の製造方法
JP2010263132A (ja) * 2009-05-11 2010-11-18 Hitachi High-Technologies Corp ドライエッチング方法
JP2018046216A (ja) * 2016-09-16 2018-03-22 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2019186322A (ja) * 2018-04-05 2019-10-24 東京エレクトロン株式会社 被加工物の処理方法
US20210313192A1 (en) * 2020-04-01 2021-10-07 Tokyo Electron Limited Method of patterning a metal film with improved sidewall roughness

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102417156B (zh) * 2011-11-15 2015-02-04 苏州含光微纳科技有限公司 一种刻蚀金属钼材料的方法
US10692880B2 (en) * 2016-12-27 2020-06-23 Applied Materials, Inc. 3D NAND high aspect ratio structure etch
US10269559B2 (en) * 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
CN112640064A (zh) * 2018-08-24 2021-04-09 朗姆研究公司 用于高深宽比蚀刻的含金属钝化
JP7728778B2 (ja) * 2020-03-06 2025-08-25 ラム リサーチ コーポレーション モリブデンの原子層エッチング

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02105413A (ja) * 1988-10-14 1990-04-18 Hitachi Ltd プラズマエッチング処理方法
JPH05102090A (ja) * 1990-10-18 1993-04-23 Micron Technol Inc 半導体デバイスのエツチング方法およびエツチング物質
JPH0613348A (ja) * 1992-06-25 1994-01-21 Seiko Epson Corp 半導体装置の製造方法
JP2010263132A (ja) * 2009-05-11 2010-11-18 Hitachi High-Technologies Corp ドライエッチング方法
JP2018046216A (ja) * 2016-09-16 2018-03-22 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2019186322A (ja) * 2018-04-05 2019-10-24 東京エレクトロン株式会社 被加工物の処理方法
US20210313192A1 (en) * 2020-04-01 2021-10-07 Tokyo Electron Limited Method of patterning a metal film with improved sidewall roughness

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Publication number Publication date
WO2023107492A1 (en) 2023-06-15
US20240186149A1 (en) 2024-06-06
TW202338066A (zh) 2023-10-01
KR20240113753A (ko) 2024-07-23

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