JP2021528848A5 - - Google Patents
Info
- Publication number
- JP2021528848A5 JP2021528848A5 JP2020570099A JP2020570099A JP2021528848A5 JP 2021528848 A5 JP2021528848 A5 JP 2021528848A5 JP 2020570099 A JP2020570099 A JP 2020570099A JP 2020570099 A JP2020570099 A JP 2020570099A JP 2021528848 A5 JP2021528848 A5 JP 2021528848A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- plasma
- process chamber
- trenches
- power
- Prior art date
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862687100P | 2018-06-19 | 2018-06-19 | |
| US62/687,100 | 2018-06-19 | ||
| PCT/US2019/033832 WO2019245702A1 (en) | 2018-06-19 | 2019-05-23 | Pulsed plasma deposition etch step coverage improvement |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2021528848A JP2021528848A (ja) | 2021-10-21 |
| JP2021528848A5 true JP2021528848A5 (https=) | 2022-06-01 |
| JPWO2019245702A5 JPWO2019245702A5 (https=) | 2022-06-01 |
| JP7420752B2 JP7420752B2 (ja) | 2024-01-23 |
Family
ID=68839365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020570099A Active JP7420752B2 (ja) | 2018-06-19 | 2019-05-23 | パルスプラズマ堆積エッチングのステップカバレッジ改善 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10950430B2 (https=) |
| JP (1) | JP7420752B2 (https=) |
| KR (1) | KR102691504B1 (https=) |
| CN (1) | CN112204706B (https=) |
| SG (1) | SG11202010449RA (https=) |
| TW (1) | TWI821298B (https=) |
| WO (1) | WO2019245702A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11276570B2 (en) * | 2020-07-22 | 2022-03-15 | Applied Materials, Inc. | Multi-layer deposition and treatment of silicon nitride films |
| US12412741B2 (en) | 2020-11-18 | 2025-09-09 | Applied Materials, Inc. | Silicon oxide gap fill using capacitively coupled plasmas |
| US11935751B2 (en) * | 2021-05-25 | 2024-03-19 | Applied Materials, Inc. | Boron nitride for mask patterning |
| US20240087882A1 (en) * | 2022-09-09 | 2024-03-14 | Applied Materials, Inc. | Fluorine-doped silicon-containing materials |
| JP2024085546A (ja) | 2022-12-15 | 2024-06-27 | 東京エレクトロン株式会社 | 凹部の埋込方法及びプラズマ処理装置 |
| WO2026039672A1 (en) * | 2024-08-15 | 2026-02-19 | Applied Materials, Inc. | In-situ cycle ale method for dielectric deposition full-fill on narrow trench |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11340223A (ja) * | 1998-05-22 | 1999-12-10 | Sony Corp | 半導体装置の製造方法 |
| JP4163857B2 (ja) * | 1998-11-04 | 2008-10-08 | サーフィス テクノロジー システムズ ピーエルシー | 基板をエッチングするための方法と装置 |
| US20050100682A1 (en) * | 2003-11-06 | 2005-05-12 | Tokyo Electron Limited | Method for depositing materials on a substrate |
| US20060105106A1 (en) * | 2004-11-16 | 2006-05-18 | Applied Materials, Inc. | Tensile and compressive stressed materials for semiconductors |
| US8138104B2 (en) * | 2005-05-26 | 2012-03-20 | Applied Materials, Inc. | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure |
| US7655973B2 (en) | 2005-10-31 | 2010-02-02 | Micron Technology, Inc. | Recessed channel negative differential resistance-based memory cell |
| CN101416293B (zh) * | 2006-03-31 | 2011-04-20 | 应用材料股份有限公司 | 用于介电膜层的阶梯覆盖与图案加载 |
| US7780865B2 (en) * | 2006-03-31 | 2010-08-24 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
| US7517804B2 (en) * | 2006-08-31 | 2009-04-14 | Micron Technologies, Inc. | Selective etch chemistries for forming high aspect ratio features and associated structures |
| US8187486B1 (en) * | 2007-12-13 | 2012-05-29 | Novellus Systems, Inc. | Modulating etch selectivity and etch rate of silicon nitride thin films |
| WO2010033924A2 (en) * | 2008-09-22 | 2010-03-25 | Applied Materials, Inc. | Etch reactor suitable for etching high aspect ratio features |
| US7745346B2 (en) * | 2008-10-17 | 2010-06-29 | Novellus Systems, Inc. | Method for improving process control and film conformality of PECVD film |
| US8563095B2 (en) * | 2010-03-15 | 2013-10-22 | Applied Materials, Inc. | Silicon nitride passivation layer for covering high aspect ratio features |
| KR101147727B1 (ko) | 2010-08-02 | 2012-05-25 | 주식회사 유진테크 | 사이클릭 박막 증착 방법 |
| US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| CN105336680B (zh) * | 2014-08-13 | 2020-02-11 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法和电子装置 |
| JP2016119344A (ja) | 2014-12-19 | 2016-06-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US9748093B2 (en) * | 2015-03-18 | 2017-08-29 | Applied Materials, Inc. | Pulsed nitride encapsulation |
| JP6230573B2 (ja) | 2015-07-06 | 2017-11-15 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラム、基板処理システム及び基板処理装置 |
| US20170323785A1 (en) * | 2016-05-06 | 2017-11-09 | Lam Research Corporation | Method to deposit conformal and low wet etch rate encapsulation layer using pecvd |
-
2019
- 2019-05-23 KR KR1020207036780A patent/KR102691504B1/ko active Active
- 2019-05-23 CN CN201980036655.5A patent/CN112204706B/zh active Active
- 2019-05-23 JP JP2020570099A patent/JP7420752B2/ja active Active
- 2019-05-23 SG SG11202010449RA patent/SG11202010449RA/en unknown
- 2019-05-23 WO PCT/US2019/033832 patent/WO2019245702A1/en not_active Ceased
- 2019-05-30 TW TW108118704A patent/TWI821298B/zh active
- 2019-06-18 US US16/444,865 patent/US10950430B2/en active Active
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