JP7420752B2 - パルスプラズマ堆積エッチングのステップカバレッジ改善 - Google Patents

パルスプラズマ堆積エッチングのステップカバレッジ改善 Download PDF

Info

Publication number
JP7420752B2
JP7420752B2 JP2020570099A JP2020570099A JP7420752B2 JP 7420752 B2 JP7420752 B2 JP 7420752B2 JP 2020570099 A JP2020570099 A JP 2020570099A JP 2020570099 A JP2020570099 A JP 2020570099A JP 7420752 B2 JP7420752 B2 JP 7420752B2
Authority
JP
Japan
Prior art keywords
plasma
dielectric layer
process chamber
gas
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020570099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021528848A (ja
JP2021528848A5 (https=
JPWO2019245702A5 (https=
Inventor
ヴィナヤック ヴィア ヴァツ，
ハン ユイ，
ディーネッシュ パディ，
チャンリン リー，
グレゴリー エム． アミコ，
サンジェイ ジー． カマト，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2021528848A publication Critical patent/JP2021528848A/ja
Publication of JP2021528848A5 publication Critical patent/JP2021528848A5/ja
Publication of JPWO2019245702A5 publication Critical patent/JPWO2019245702A5/ja
Application granted granted Critical
Publication of JP7420752B2 publication Critical patent/JP7420752B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2020570099A 2018-06-19 2019-05-23 パルスプラズマ堆積エッチングのステップカバレッジ改善 Active JP7420752B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862687100P 2018-06-19 2018-06-19
US62/687,100 2018-06-19
PCT/US2019/033832 WO2019245702A1 (en) 2018-06-19 2019-05-23 Pulsed plasma deposition etch step coverage improvement

Publications (4)

Publication Number Publication Date
JP2021528848A JP2021528848A (ja) 2021-10-21
JP2021528848A5 JP2021528848A5 (https=) 2022-06-01
JPWO2019245702A5 JPWO2019245702A5 (https=) 2022-06-01
JP7420752B2 true JP7420752B2 (ja) 2024-01-23

Family

ID=68839365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020570099A Active JP7420752B2 (ja) 2018-06-19 2019-05-23 パルスプラズマ堆積エッチングのステップカバレッジ改善

Country Status (7)

Country Link
US (1) US10950430B2 (https=)
JP (1) JP7420752B2 (https=)
KR (1) KR102691504B1 (https=)
CN (1) CN112204706B (https=)
SG (1) SG11202010449RA (https=)
TW (1) TWI821298B (https=)
WO (1) WO2019245702A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11276570B2 (en) * 2020-07-22 2022-03-15 Applied Materials, Inc. Multi-layer deposition and treatment of silicon nitride films
US12412741B2 (en) 2020-11-18 2025-09-09 Applied Materials, Inc. Silicon oxide gap fill using capacitively coupled plasmas
US11935751B2 (en) * 2021-05-25 2024-03-19 Applied Materials, Inc. Boron nitride for mask patterning
US20240087882A1 (en) * 2022-09-09 2024-03-14 Applied Materials, Inc. Fluorine-doped silicon-containing materials
JP2024085546A (ja) 2022-12-15 2024-06-27 東京エレクトロン株式会社 凹部の埋込方法及びプラズマ処理装置
WO2026039672A1 (en) * 2024-08-15 2026-02-19 Applied Materials, Inc. In-situ cycle ale method for dielectric deposition full-fill on narrow trench

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009514212A (ja) 2005-10-31 2009-04-02 マイクロン テクノロジー， インク． 溝形チャネルの負性微分抵抗をベースとするメモリセル
US20100099271A1 (en) 2008-10-17 2010-04-22 Novellus Systems, Inc. Method for improving process control and film conformality of pecvd film
JP2013522913A (ja) 2010-03-15 2013-06-13 アプライド マテリアルズ インコーポレイテッド 高アスペクト比の特徴をカバーするための窒化ケイ素パッシベーション層
JP2013542581A (ja) 2010-08-02 2013-11-21 ユ−ジーン テクノロジー カンパニー．リミテッド サイクリック薄膜の蒸着方法
JP2016119344A (ja) 2014-12-19 2016-06-30 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2017017274A (ja) 2015-07-06 2017-01-19 株式会社日立国際電気 半導体装置の製造方法、プログラム、基板処理システム及び基板処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340223A (ja) * 1998-05-22 1999-12-10 Sony Corp 半導体装置の製造方法
JP4163857B2 (ja) * 1998-11-04 2008-10-08 サーフィス テクノロジー システムズ ピーエルシー 基板をエッチングするための方法と装置
US20050100682A1 (en) * 2003-11-06 2005-05-12 Tokyo Electron Limited Method for depositing materials on a substrate
US20060105106A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Tensile and compressive stressed materials for semiconductors
US8138104B2 (en) * 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
CN101416293B (zh) * 2006-03-31 2011-04-20 应用材料股份有限公司 用于介电膜层的阶梯覆盖与图案加载
US7780865B2 (en) * 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US7517804B2 (en) * 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
US8187486B1 (en) * 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
WO2010033924A2 (en) * 2008-09-22 2010-03-25 Applied Materials, Inc. Etch reactor suitable for etching high aspect ratio features
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
CN105336680B (zh) * 2014-08-13 2020-02-11 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法和电子装置
US9748093B2 (en) * 2015-03-18 2017-08-29 Applied Materials, Inc. Pulsed nitride encapsulation
US20170323785A1 (en) * 2016-05-06 2017-11-09 Lam Research Corporation Method to deposit conformal and low wet etch rate encapsulation layer using pecvd

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009514212A (ja) 2005-10-31 2009-04-02 マイクロン テクノロジー， インク． 溝形チャネルの負性微分抵抗をベースとするメモリセル
US20100099271A1 (en) 2008-10-17 2010-04-22 Novellus Systems, Inc. Method for improving process control and film conformality of pecvd film
JP2013522913A (ja) 2010-03-15 2013-06-13 アプライド マテリアルズ インコーポレイテッド 高アスペクト比の特徴をカバーするための窒化ケイ素パッシベーション層
JP2013542581A (ja) 2010-08-02 2013-11-21 ユ−ジーン テクノロジー カンパニー．リミテッド サイクリック薄膜の蒸着方法
JP2016119344A (ja) 2014-12-19 2016-06-30 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2017017274A (ja) 2015-07-06 2017-01-19 株式会社日立国際電気 半導体装置の製造方法、プログラム、基板処理システム及び基板処理装置

Also Published As

Publication number Publication date
CN112204706B (zh) 2022-02-25
TW202018761A (zh) 2020-05-16
JP2021528848A (ja) 2021-10-21
KR102691504B1 (ko) 2024-08-01
US20190385844A1 (en) 2019-12-19
CN112204706A (zh) 2021-01-08
TWI821298B (zh) 2023-11-11
WO2019245702A1 (en) 2019-12-26
SG11202010449RA (en) 2021-01-28
US10950430B2 (en) 2021-03-16
KR20210011436A (ko) 2021-02-01

Similar Documents

Publication Publication Date Title
JP7420752B2 (ja) パルスプラズマ堆積エッチングのステップカバレッジ改善
KR102384484B1 (ko) 펄싱된 플라즈마 노출을 사용하여 플라즈마 강화된 원자층 증착
TWI897943B (zh) 接縫減輕及間隙填充用整合式襯墊
CN107533962B (zh) 经由原子层沉积(ald)循环选择性沉积金属硅化物的方法
TWI841056B (zh) 基板處理方法、半導體裝置之製造方法、基板處理裝置及程式
TW202305161A (zh) 使用依序沉積-蝕刻-處理製程的氧化矽及氮化矽之由下而上的生長
US20160329206A1 (en) Methods of modulating residual stress in thin films
US20120009802A1 (en) Plasma activated conformal dielectric film deposition
KR20080106984A (ko) 유전체막들에 대한 스텝 커버리지 및 패턴 로딩 개선 방법
US12417943B2 (en) Reducing intralevel capacitance in semiconductor devices
US20250037992A1 (en) Deposition of high compressive stress thermally stable nitride film
US12431336B2 (en) Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
CN111344834B (zh) 氮化硅膜的干法蚀刻速率降低
TW202409322A (zh) 橫向間隙填充
CN118435318A (zh) 高压等离子体抑制
US20250054752A1 (en) Method to smooth sidewall roughness and maintain reentrant structures during dielectric gap fill
TW202523894A (zh) 藉由抑制型原子層沉積的無縫間隙填充
TW202534196A (zh) 在間隙填充膜蝕刻期間具有抑制及原位鈍化及硬遮罩保護的原子層沉積
TW202432870A (zh) 含矽膜中的氟減少

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220523

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220523

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230420

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230606

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230904

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20231219

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240111

R150 Certificate of patent or registration of utility model

Ref document number: 7420752

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150