JPWO2019245702A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2019245702A5 JPWO2019245702A5 JP2020570099A JP2020570099A JPWO2019245702A5 JP WO2019245702 A5 JPWO2019245702 A5 JP WO2019245702A5 JP 2020570099 A JP2020570099 A JP 2020570099A JP 2020570099 A JP2020570099 A JP 2020570099A JP WO2019245702 A5 JPWO2019245702 A5 JP WO2019245702A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- plasma
- pulse
- trenches
- process chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 38
- 239000007789 gas Substances 0.000 claims 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 12
- 238000001020 plasma etching Methods 0.000 claims 8
- 238000009832 plasma treatment Methods 0.000 claims 8
- 238000002161 passivation Methods 0.000 claims 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 6
- 229910052731 fluorine Inorganic materials 0.000 claims 6
- 239000011737 fluorine Substances 0.000 claims 6
- 239000001307 helium Substances 0.000 claims 6
- 229910052734 helium Inorganic materials 0.000 claims 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 6
- 239000000203 mixture Substances 0.000 claims 6
- 229910052757 nitrogen Inorganic materials 0.000 claims 6
- 239000012159 carrier gas Substances 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 239000002243 precursor Substances 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000000280 densification Methods 0.000 claims 3
- 238000005137 deposition process Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 238000010926 purge Methods 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862687100P | 2018-06-19 | 2018-06-19 | |
| US62/687,100 | 2018-06-19 | ||
| PCT/US2019/033832 WO2019245702A1 (en) | 2018-06-19 | 2019-05-23 | Pulsed plasma deposition etch step coverage improvement |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2021528848A JP2021528848A (ja) | 2021-10-21 |
| JP2021528848A5 JP2021528848A5 (https=) | 2022-06-01 |
| JPWO2019245702A5 true JPWO2019245702A5 (https=) | 2022-06-01 |
| JP7420752B2 JP7420752B2 (ja) | 2024-01-23 |
Family
ID=68839365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020570099A Active JP7420752B2 (ja) | 2018-06-19 | 2019-05-23 | パルスプラズマ堆積エッチングのステップカバレッジ改善 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10950430B2 (https=) |
| JP (1) | JP7420752B2 (https=) |
| KR (1) | KR102691504B1 (https=) |
| CN (1) | CN112204706B (https=) |
| SG (1) | SG11202010449RA (https=) |
| TW (1) | TWI821298B (https=) |
| WO (1) | WO2019245702A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11276570B2 (en) * | 2020-07-22 | 2022-03-15 | Applied Materials, Inc. | Multi-layer deposition and treatment of silicon nitride films |
| US12412741B2 (en) | 2020-11-18 | 2025-09-09 | Applied Materials, Inc. | Silicon oxide gap fill using capacitively coupled plasmas |
| US11935751B2 (en) * | 2021-05-25 | 2024-03-19 | Applied Materials, Inc. | Boron nitride for mask patterning |
| US20240087882A1 (en) * | 2022-09-09 | 2024-03-14 | Applied Materials, Inc. | Fluorine-doped silicon-containing materials |
| JP2024085546A (ja) | 2022-12-15 | 2024-06-27 | 東京エレクトロン株式会社 | 凹部の埋込方法及びプラズマ処理装置 |
| WO2026039672A1 (en) * | 2024-08-15 | 2026-02-19 | Applied Materials, Inc. | In-situ cycle ale method for dielectric deposition full-fill on narrow trench |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11340223A (ja) * | 1998-05-22 | 1999-12-10 | Sony Corp | 半導体装置の製造方法 |
| JP4163857B2 (ja) * | 1998-11-04 | 2008-10-08 | サーフィス テクノロジー システムズ ピーエルシー | 基板をエッチングするための方法と装置 |
| US20050100682A1 (en) * | 2003-11-06 | 2005-05-12 | Tokyo Electron Limited | Method for depositing materials on a substrate |
| US20060105106A1 (en) * | 2004-11-16 | 2006-05-18 | Applied Materials, Inc. | Tensile and compressive stressed materials for semiconductors |
| US8138104B2 (en) * | 2005-05-26 | 2012-03-20 | Applied Materials, Inc. | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure |
| US7655973B2 (en) | 2005-10-31 | 2010-02-02 | Micron Technology, Inc. | Recessed channel negative differential resistance-based memory cell |
| CN101416293B (zh) * | 2006-03-31 | 2011-04-20 | 应用材料股份有限公司 | 用于介电膜层的阶梯覆盖与图案加载 |
| US7780865B2 (en) * | 2006-03-31 | 2010-08-24 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
| US7517804B2 (en) * | 2006-08-31 | 2009-04-14 | Micron Technologies, Inc. | Selective etch chemistries for forming high aspect ratio features and associated structures |
| US8187486B1 (en) * | 2007-12-13 | 2012-05-29 | Novellus Systems, Inc. | Modulating etch selectivity and etch rate of silicon nitride thin films |
| WO2010033924A2 (en) * | 2008-09-22 | 2010-03-25 | Applied Materials, Inc. | Etch reactor suitable for etching high aspect ratio features |
| US7745346B2 (en) * | 2008-10-17 | 2010-06-29 | Novellus Systems, Inc. | Method for improving process control and film conformality of PECVD film |
| US8563095B2 (en) * | 2010-03-15 | 2013-10-22 | Applied Materials, Inc. | Silicon nitride passivation layer for covering high aspect ratio features |
| KR101147727B1 (ko) | 2010-08-02 | 2012-05-25 | 주식회사 유진테크 | 사이클릭 박막 증착 방법 |
| US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| CN105336680B (zh) * | 2014-08-13 | 2020-02-11 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法和电子装置 |
| JP2016119344A (ja) | 2014-12-19 | 2016-06-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US9748093B2 (en) * | 2015-03-18 | 2017-08-29 | Applied Materials, Inc. | Pulsed nitride encapsulation |
| JP6230573B2 (ja) | 2015-07-06 | 2017-11-15 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラム、基板処理システム及び基板処理装置 |
| US20170323785A1 (en) * | 2016-05-06 | 2017-11-09 | Lam Research Corporation | Method to deposit conformal and low wet etch rate encapsulation layer using pecvd |
-
2019
- 2019-05-23 KR KR1020207036780A patent/KR102691504B1/ko active Active
- 2019-05-23 CN CN201980036655.5A patent/CN112204706B/zh active Active
- 2019-05-23 JP JP2020570099A patent/JP7420752B2/ja active Active
- 2019-05-23 SG SG11202010449RA patent/SG11202010449RA/en unknown
- 2019-05-23 WO PCT/US2019/033832 patent/WO2019245702A1/en not_active Ceased
- 2019-05-30 TW TW108118704A patent/TWI821298B/zh active
- 2019-06-18 US US16/444,865 patent/US10950430B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8298951B1 (en) | Footing reduction using etch-selective layer | |
| KR101779112B1 (ko) | 반도체 소자의 미세 패턴 형성 방법 | |
| JP2021528848A5 (https=) | ||
| TWI478234B (zh) | 氮化矽膜之蝕刻方法 | |
| TWI789449B (zh) | 基板之電漿蝕刻方法 | |
| US20190371617A1 (en) | Device fabrication via pulsed plasma | |
| JP4153606B2 (ja) | プラズマエッチング方法およびプラズマエッチング装置 | |
| JP2020529732A (ja) | 周期的な不動態化およびエッチングを使用する高アスペクト比の選択的横方向エッチング | |
| TWI692809B (zh) | 蝕刻方法 | |
| CN101197258A (zh) | 用于多层抗蚀剂等离子体蚀刻的方法 | |
| JP4065213B2 (ja) | シリコン基板のエッチング方法及びエッチング装置 | |
| JP4209774B2 (ja) | シリコン基板のエッチング方法およびエッチング装置 | |
| US20050003310A1 (en) | Etching process including plasma pretreatment for generating fluorine-free carbon-containing polymer on a photoresist pattern | |
| TWI856131B (zh) | 使用針對性沉積以供選擇性鈍化的特徵部蝕刻方法 | |
| JP7299887B2 (ja) | 窒化ケイ素膜のドライエッチング速度の低減 | |
| JP4184851B2 (ja) | プラズマ処理方法 | |
| TWI294144B (en) | Etching method and plasma etching processing apparatus | |
| TW202040687A (zh) | 電漿處理方法 | |
| JPH06177092A (ja) | 半導体装置の製造方法 | |
| JP2004512673A (ja) | 炭素を含有するシリコン酸化物膜をエッチングする方法 | |
| JP2021028959A (ja) | エッチング方法及び基板処理装置 | |
| JPWO2019245702A5 (https=) | ||
| KR100925054B1 (ko) | 웨이퍼 식각 방법 | |
| KR20130063089A (ko) | 반도체 소자의 트렌치 형성 방법 | |
| JP2002141407A (ja) | 半導体装置およびその製造方法 |