JP2024505507A5 - - Google Patents
Info
- Publication number
- JP2024505507A5 JP2024505507A5 JP2023545747A JP2023545747A JP2024505507A5 JP 2024505507 A5 JP2024505507 A5 JP 2024505507A5 JP 2023545747 A JP2023545747 A JP 2023545747A JP 2023545747 A JP2023545747 A JP 2023545747A JP 2024505507 A5 JP2024505507 A5 JP 2024505507A5
- Authority
- JP
- Japan
- Prior art keywords
- germanium
- layer
- plasma
- nitrogen
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/161,199 | 2021-01-28 | ||
| US17/161,199 US11482423B2 (en) | 2021-01-28 | 2021-01-28 | Plasma etching techniques |
| PCT/US2022/013558 WO2022164759A1 (en) | 2021-01-28 | 2022-01-24 | Plasma etching techniques |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024505507A JP2024505507A (ja) | 2024-02-06 |
| JP2024505507A5 true JP2024505507A5 (https=) | 2025-01-28 |
Family
ID=82496031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023545747A Pending JP2024505507A (ja) | 2021-01-28 | 2022-01-24 | プラズマエッチング技法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11482423B2 (https=) |
| JP (1) | JP2024505507A (https=) |
| KR (1) | KR20230131945A (https=) |
| CN (1) | CN116897414A (https=) |
| TW (1) | TW202238717A (https=) |
| WO (1) | WO2022164759A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12272558B2 (en) * | 2022-05-09 | 2025-04-08 | Tokyo Electron Limited | Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification |
| WO2025174546A1 (en) * | 2024-02-12 | 2025-08-21 | Applied Materials, Inc. | Selective etching of silicon-and-germanium-containing materials with reduced under layer loss |
| WO2025244994A1 (en) * | 2024-05-21 | 2025-11-27 | Lam Research Corporation | Selective etch of stack using a nitrogen and fluorine containing gas |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6596597B2 (en) * | 2001-06-12 | 2003-07-22 | International Business Machines Corporation | Method of manufacturing dual gate logic devices |
| US8389416B2 (en) * | 2010-11-22 | 2013-03-05 | Tokyo Electron Limited | Process for etching silicon with selectivity to silicon-germanium |
| JP5819243B2 (ja) * | 2012-04-23 | 2015-11-18 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| JP5851349B2 (ja) | 2012-06-04 | 2016-02-03 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法及びプラズマエッチング装置 |
| US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
| US9419107B2 (en) | 2014-06-19 | 2016-08-16 | Applied Materials, Inc. | Method for fabricating vertically stacked nanowires for semiconductor applications |
| US9653291B2 (en) * | 2014-11-13 | 2017-05-16 | Applied Materials, Inc. | Method for removing native oxide and residue from a III-V group containing surface |
| JP6426489B2 (ja) * | 2015-02-03 | 2018-11-21 | 東京エレクトロン株式会社 | エッチング方法 |
| US9786664B2 (en) * | 2016-02-10 | 2017-10-10 | International Business Machines Corporation | Fabricating a dual gate stack of a CMOS structure |
| KR102323389B1 (ko) | 2016-03-02 | 2021-11-05 | 도쿄엘렉트론가부시키가이샤 | 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭 |
| US10177227B1 (en) * | 2017-08-28 | 2019-01-08 | Applied Materials, Inc. | Method for fabricating junctions and spacers for horizontal gate all around devices |
| US10529581B2 (en) * | 2017-12-29 | 2020-01-07 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications |
| WO2020172208A1 (en) | 2019-02-20 | 2020-08-27 | Tokyo Electron Limited | Method for selective etching at an interface between materials |
| KR102727230B1 (ko) * | 2019-07-18 | 2024-11-06 | 도쿄엘렉트론가부시키가이샤 | 금속의 제어 가능한 에칭 선택비를 갖는 기상 에칭 |
| US11069819B2 (en) * | 2019-10-30 | 2021-07-20 | Globalfoundries U.S. Inc. | Field-effect transistors with channel regions that include a two-dimensional material on a mandrel |
-
2021
- 2021-01-28 US US17/161,199 patent/US11482423B2/en active Active
-
2022
- 2022-01-24 CN CN202280017300.3A patent/CN116897414A/zh active Pending
- 2022-01-24 JP JP2023545747A patent/JP2024505507A/ja active Pending
- 2022-01-24 KR KR1020237028670A patent/KR20230131945A/ko active Pending
- 2022-01-24 WO PCT/US2022/013558 patent/WO2022164759A1/en not_active Ceased
- 2022-01-27 TW TW111103598A patent/TW202238717A/zh unknown
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